The Defect Structures of Fe9S10

1983 ◽  
Vol 31 ◽  
Author(s):  
Thao A. Nguyen ◽  
Linn W. Hobbs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stacking Faults ◽  
Defect Structures ◽  
Transmission Electron ◽  
Vacancy Ordering ◽  
Different Types ◽  
Lattice Images ◽  
Antiphase Domains ◽  
Complex Features

ABSTRACTThe defect structures of Fe9S10 have been studied by high-resolution transmission electron microscopy. Lattice images of the 3C and 4C superstructures and at least one other phase, which has not been previously reported, were observed. It has been found that the 4C superstructure transforms into the 3C superstructure rather than the MC phase as previously suggested. Intrinsic stacking faults in the sulfur sublattice and two different types of vacancy-ordering antiphase domains were also observed. Evidence from optical diffratograms of areas containing these defects suggests that complex features in the electron diffraction pattern may be artifactual.

Kinetics of Vacancy Ordering in YSi2−x Thin Film on Silicon

1991 ◽  
Vol 230 ◽  
Author(s):  
T. L. Lee ◽  
L. J. Chen ◽  
F. R. Chen
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Stacking Faults ◽  
Step Structure ◽  
Transmission Electron ◽  
Vacancy Ordering ◽  
Kinetics Of

AbstractHigh resolution and conventional transmission electron microscopy have been applied to study the interfacial reaction of yttrium thin films on Si. Epitaxial Ysi2−x film was grown on (111)Si by rapid thermal annealing at 500–1000 °C. The orientation relationship between yttrium silicide and (111)Si was determined to be [0001]Ysi2−x//[111]Si and (1010)Ysi2−x//(112)Si. The vacancies in the Ysi2−x film were found to be ordered in the Si sublattice plane and form an out-of-step structure. The range of M values of the out-of-step structure was found to narrow with annealing temperature and time. Defects along specific crystallographic directions were observed and analyzed to be intrinsic stacking faults.

Planar defects in β-iron disilicide (β-FeSi2) analyzed by transmission electron microscopy and modeling

1992 ◽  
Vol 25 (2) ◽  
pp. 122-128 ◽  
Author(s):  
Y. Zheng ◽  
A. Taccoen ◽  
J. F. Petroff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Model ◽  
Stacking Faults ◽  
Planar Defects ◽  
Iron Disilicide ◽  
Defect Position ◽  
Transmission Electron ◽  
Lattice Images ◽  
Diffraction Patterns

Microplanar defects were observed in β-iron disilicide by transmission electron microscopy. They were identified as (100)[011]/2 intrinsic stacking faults by means of electron diffraction patterns and observed in high-resolution lattice images. A structural model of the faults is proposed here in setting the defect position at x = ¼ within the cell.

MICROSTRUCTURE AND PROPERTIES OF FERROELECTRIC Bi4Ti3O12 THIN FILMS

1999 ◽  
Vol 13 (26) ◽  
pp. 933-945 ◽  
Author(s):  
B. JIANG ◽  
J. L. PENG ◽  
L. A. BURSILL ◽  
H. WANG
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Bismuth Titanate ◽  
Stacking Faults ◽  
Film Morphology ◽  
Defect Structures ◽  
Transmission Electron ◽  
Simulated Images

The film morphology and defect structure of ferroelectric bismuth titanate thin films are studied by high resolution transmission electron microscopy. As-grown and RTA-processed thin films have similar defect structures, consisting of stacking faults and complex intergrowth defect structures. The as-grown specimens prepared at low temperature had smaller particle size with higher density of these defects compared to RTA-processed samples. Detailed atomic structure models for the stacking faults and intergrowth defect structures are proposed and the computer-simulated images are compared with experiment.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

scholarly journals High-resolution transmission electron microscopy on KHx–GIC's

1986 ◽  
Vol 1 (1) ◽  
pp. 177-186 ◽  
Author(s):  
L. Salamanca-Riba ◽  
N.-C. Yeh ◽  
M. S. Dresselhaus ◽  
M. Endo ◽  
T. Enoki
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Deuterium Content ◽  
X Ray Diffraction ◽  
High Hydrogen ◽  
Intermediate Phases ◽  
Transmission Electron ◽  
Final Compound ◽  
Lattice Images ◽  
Hydrogen Deuterium

The in-plane and c-axis structure of KHx—GIC's and KDy—GIC's is studied using transmission electron microscopy (TEM) and x-ray diffraction as a function of intercalation temperature and time. With the TEM, two commensurate in-plane phases are found to coexist in these compounds with relative concentrations depending on intercalation conditions. When the direct intercalation method is used, the first step of intercalation is the formation of a stage n potassium-GIC and the final compound is a stage n KHx—GIC (or KDy—GIC). Highresolution (00l) lattice images show direct evidence for intermediate phases in the intercalation process. These intermediate phases are hydrogen (deuterium) deficient and are found at the boundary between pure potassium regions and regions with high hydrogen (deuterium) content. A comparison of the structure for the two methods of intercalation of KH is also presented.

Defects in Germanium Nanocrystals Produced by Ion Implantation

2013 ◽  
Vol 709 ◽  
pp. 148-152
Author(s):  
Yu Juan Zhang ◽  
Lei Shang
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Defect Structures ◽  
High Temperature Annealing ◽  
Planar Defects ◽  
Transmission Electron ◽  
Microstructural Defects ◽  
Germanium Nanocrystals

Germanium nanocrystals (Ge-nc) were produced by the implantation of Ge+ into a SiO2 film deposited on (100) Si, followed by a high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) has been used to investigate the defect structures inside the Ge-nc produced by different implantation doses (1×1016, 2×1016, 4×1016 and 8×1016 cm-2). It has been found that the planar defects such as nanotwins and stacking faults (SFs) are dominant in Ge-nc (60%) for the samples with implantation doses higher than 2×1016 cm-2, while for the sample with an implantation dose lower than 1×1016 cm-2, fewer planar defects are observed in the Ge-nc (20%). The percentages of nanotwins in the planar defects are 87%, 77%, 67% and 60% in four samples, respectively. The twinning structures include single twins, double twins and multiple twins. We also found that there are only SFs in some nanocrystals, and in others the SFs coexist with twins. These microstructural defects are expected to play an important role in the light emission from the Ge-nc.

The influence of Pt and SrTiO3 interlayers on the microstructure of PbTiO3 thin films deposited by laser ablation on (001) MgO

1995 ◽  
Vol 10 (4) ◽  
pp. 791-794 ◽  
Author(s):  
S. Stemmer ◽  
S.K. Streiffer ◽  
W-Y. Hsu ◽  
F. Ernst ◽  
R. Raj ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Laser Ablation ◽  
Volume Fraction ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Transmission Electron ◽  
Electrical Conductivities ◽  
Different Types ◽  
Oriented Material

We have used conventional and high-resolution transmission electron microscopy to investigate the microstruture of epitaxial, ferroelectric PbTiO3 films grown by pulsed laser ablation on (001) MgO single crystals, and on MgO covered with epitaxial Pt or SrTiO3. Pronounced variations are found in the widths and lengths of a-axis-oriented domains in these films, although the volume fraction of a-axis-oriented material varies only weakly for the different types of samples. In addition, the films deposited onto Pt-coated MgO have a larger grain size than those deposited onto bare MgO or SrTiO3/MgO. Possible reasons for the variations in the distribution of a-axis-oriented material in these samples include differences in the elastic properties and electrical conductivities of the different substrate combinations.

Structural Characterization of CF-PVT Grown Bulk 3C-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 67-70 ◽  
Author(s):  
Alkyoni Mantzari ◽  
Frédéric Mercier ◽  
Maher Soueidan ◽  
Didier Chaussende ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Properties ◽  
Structural Characterization ◽  
Stacking Faults ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transmission Electron ◽  
Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

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