Misfit Dislocations in the Interface between the Metallic and Insulating Phases in Cr Doped V203

1983 ◽  
Vol 31 ◽  
Author(s):  
Nobuo Otsuka ◽  
Hiroshi Sato
Keyword(s):  
Basal Plane ◽  
Room Temperature ◽  
Misfit Dislocations ◽  
Weak Beam ◽  
Principal Axes ◽  
Beam Technique

ABSTRACTThe formation of misfit dislocations in the interface between the metallic and insulating phases which occur in 1.2% Cr doped V203 near room temperature was confirmed by TEM. Orientations of Burgers vectors of misfit dislocations were determined by the weak beam technique. The Burger vectors were parallel to principal axes in the basal plane (<100>) and inclined somewhat to interfaces. The Burgers vectors of misfit dislocations are, however, close enough to the direction of the maximum misfit in the interface. Only one or two misfit dislocations appear in an interface regardless of the thickness of specimens, and these were always located near the surface.

Experimental Tem and Image Simulation of Dislocations in Ti3A1

1994 ◽  
Vol 364 ◽  
Author(s):  
JÖrg M.K. Wiezorek ◽  
S. A. Court ◽  
C.J. Humphreys
Keyword(s):  
Fine Structure ◽  
Room Temperature ◽  
Stacking Faults ◽  
Antiphase Boundary ◽  
Computational Techniques ◽  
Image Simulation ◽  
Prism Plane ◽  
Weak Beam ◽  
Transmission Electron ◽  
Beam Technique

AbstractThe fine structure and the character of a dislocations on prism planes have been determined for room-temperature deformed polycrystalline Ti3Al using a combination of experimental and computational techniques of transmission electron microscopy (TEM). Within the resolution limits of the weak-beam technique the fine structure of prism plane a dislocations in Ti3Al is found to be planar and to comprise only a single ribbon of antiphase boundary and no experimentally observable stacking faults.

Electron microscope studies of climb of dissociated dislocations

1978 ◽  
Vol 36 (1) ◽  
pp. 324-325
Author(s):  
C.B. Carter ◽  
D. Cherns ◽  
P.B. Hirsch ◽  
H. Saka
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Point Defects ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Al Alloys ◽  
Weak Beam ◽  
High Supersaturation ◽  
Beam Technique

The mechanism of climb of dissociated dislocations in f.c.c. metals and alloys is not well understood. Climb of dislocations by absorption or emission of vacancies at existing jogs in dissociated dislocations has been observed using the “weak-beam” technique of electron microscopy, but the mechanism of nucleation of jogs is not clear. In this paper we report some results of experiments designed to study the nucleation problem, and more generally the mechanism of absorption of point defects under conditions of high supersaturation.Thin (111) sections of deformed single crystals of Cu-Al alloys, of various compositions, have been electron irradiated in an AEI EM7 HVEM up to 1 MeV, either at room temperature, or elevated temperatures up to 200°C, using a goniometer heating stage. Observations under weak beam conditions have been made a) in situ in the HVEM b) at 100kV in an JEM100B, following irradiation in the HVEM. Interstitials produced by the irradiation are expected to be preferentially attracted to the dislocations because of the strong dislocation-interstitial interaction.

In-Situ Heating Observations on Superlattice Dislocation in A Ni3(Al, Zr) Single Crystal

1994 ◽  
Vol 364 ◽  
Author(s):  
Yi Liu ◽  
Yuefeng Gu ◽  
Dongliang Lin ◽  
Shipu Chen ◽  
Xiaoning Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Significant Variation ◽  
Room Temperature ◽  
Peak Temperature ◽  
Burgers Vector ◽  
Superlattice Dislocation ◽  
Weak Beam ◽  
In Situ Heating ◽  
Beam Technique

AbstractThe TEM weak-beam technique has been used to investigate the behavior of dissociated superlattice dislocation in Ni3Al single crystal as a function of temperature. The observed dislocation with the Burgers vector of [110] partly dissociated on the (001) plane forming Kear-Wilsdorf (KW) lock. The dissociated pair did not indicate significant variation of separation in the temperature range from room temperature to 773K. but turned to form a jog at 773K. At 898K, which is near the peak temperature, the dissociated segment constricted completely. The experimental observations are discussed.

Tem Study of Dislocations in Plastically Deformed AlN

1992 ◽  
Vol 242 ◽  
Author(s):  
V. Audurier ◽  
J. L. Demenet ◽  
J. Rabier
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Compound Semiconductors ◽  
Burgers Vector ◽  
Weak Beam ◽  
Deformation Substructure ◽  
Transmission Electron ◽  
Doping Effects ◽  
Electronic Doping ◽  
Beam Technique

ABSTRACTAlN ceramics were plastically deformed using uniaxial compression under hydrostatic pressure between room temperature (RT) and 800°C. Deformation microstructures have been studied by Transmission Electron Microscopy (TEM) using the weak beam technique. The deformation substructure at RT is characterized by perfect glide loops with 1/3<1120> Burgers vector in (0001) elongated in the screw direction. When deformation temperature increases, the screw character is associated to cross slip events and dislocation dipolesare found. In the investigated temperature range, slip of dislocations with 1/3<1120> Burgers vector is also evidenced on prismatic planes. Weak beam observations failed to evidence any dislocation splitting. Some of these dislocation properties, similar to those of III-V compound semiconductors, suggest that electronic doping effects could be used to control plastic behaviour of covalent ceramics.

Plasticity, Dislocation Structures and Antiphase Boundary Energies in Fe3Al Single Crystals with Chromium

1996 ◽  
Vol 460 ◽  
Author(s):  
Filip Král ◽  
Peter Schwander ◽  
Gernot Kostorz
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
Antiphase Boundary ◽  
Positive Temperature ◽  
Weak Beam ◽  
Dislocation Arrangement ◽  
Transmission Electron ◽  
Direct Measurements ◽  
Critical Resolved Shear Stress ◽  
Beam Technique

ABSTRACTThe influence of Cr additions on the positive temperature dependence of the critical resolved shear stress of Fe3Al is investigated. Single crystals of binary Fe-28 at.% Al and ternary Fe-28 at.% Al-6 at.% Cr with different orientations are deformed in uniaxial compression between room temperature and 1273 K. The dislocation arrangement and the dissociation of superdislocations are studied by transmission electron microscopy using the weak-beam technique. The operative slip systems are discussed on the basis of the direct measurements of the antiphase boundary energies and of the activation volume.

TEM Study of a Tilt Boundary in Hot-Pressed Silicon

1981 ◽  
Vol 39 ◽  
pp. 160-161
Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast
Keyword(s):  
Electron Diffraction ◽  
Imaging Technique ◽  
Interface Structure ◽  
Large Area ◽  
Weak Beam ◽  
Lattice Fringe ◽  
Electron Diffraction Technique ◽  
Tilt Boundaries ◽  
Beam Technique ◽  
Twist Boundaries

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.

A Many-Beam Technique for Enhanced Resolution of Partial Dislocations

1972 ◽  
Vol 30 ◽  
pp. 646-647
Author(s):  
J. M. Oblak ◽  
B. H. Kear
Keyword(s):  
Phase Shift ◽  
Field Method ◽  
Dark Field ◽  
Bright Field ◽  
Field Technique ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Enhanced Resolution ◽  
Nickel Base ◽  
Beam Technique

The “weak-beam” and systematic many-beam techniques are the currently available methods for resolution of closely spaced dislocations or other inhomogeneities imaged through strain contrast. The former is a dark field technique and image intensities are usually very weak. The latter is a bright field technique, but generally use of a high voltage instrument is required. In what follows a bright field method for obtaining enhanced resolution of partial dislocations at 100 KV accelerating potential will be described.A brief discussion of an application will first be given. A study of intermediate temperature creep processes in commercial nickel-base alloys strengthened by the Ll2 Ni3 Al γ precipitate has suggested that partial dislocations such as those labelled 1 and 2 in Fig. 1(a) are in reality composed of two closely spaced a/6 <112> Shockley partials. Stacking fault contrast, when present, tends to obscure resolution of the partials; thus, conditions for resolution must be chosen such that the phase shift at the fault is 0 or a multiple of 2π.

Bright field and weak-beam images of dislocations gliding on (001) planes in F.C.C. metals

1978 ◽  
Vol 36 (1) ◽  
pp. 352-353
Author(s):  
H. P. Karnthaler ◽  
A. Korner
Keyword(s):  
Single Crystals ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Stage Ii ◽  
Bright Field ◽  
Weak Beam ◽  
Standard Orientation

In f.c.c. metals slip is observed to occur generally on {111} planes. Glide dislocations on intersecting {111} planes can react with each other and form Lomer-Cottrell locks which lie along a <110> direction and are sessile since they are split on two {111} planes. Cottrell already pointed out that these dislocations could glide on {001} planes if they were not split. The first study of this phenomenon has been published recently. It is the purpose of this paper to report some interesting new details of the dislocations gliding on {001} planes in pure Ni, Cu, and Ag deformed at room temperature.Single crystals are grown with standard orientation and strained into stage II. The crystals are sliced parallel to the (001) planes. The dislocation structure is studied by TEM and the Burgers vectors ḇ and glide planes of the dislocations are determined unambiguously.In Fig.l primary P and secondary S dislocations react and form composite dislocations K.

The evolution of the microstructure of 600 Mev proton irradiated materials

1990 ◽  
Vol 48 (4) ◽  
pp. 1002-1003
Author(s):  
R. Gotthardt ◽  
A. Horsewell ◽  
F. Paschoud ◽  
S. Proennecke ◽  
M. Victoria
Keyword(s):  
Nuclear Reactions ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Weak Beam ◽  
Stacking Fault Tetrahedra ◽  
Small Defect ◽  
Sufficient Intensity ◽  
Reactor Materials ◽  
Metallic Impurities ◽  
Beam Technique

Fusion reactor materials will be damaged by an intense field of energetic neutrons. There is no neutron source of sufficient intensity at these energies available at present, so the material properties are being correlated with those obtained in irradiation with other irradiation sorces. Irradiation with 600 MeV protons produces both displacement damage and impurities due to nuclear reactions. Helium and hydrogen are produced as gaseous impurities. Other metallic impurities are also created . The main elements of the microstructure observed after irradiation in the PIREX facility, are described in the following paragraphs.A. Defect clusters at low irradiation doses: In specimens irradiated to very low doses (1021-1024 protons.m-2), so that there is no superimposition of contrast, small defect clusters have been observed by the weak beam technique. Detailed analysis of the visible contrast (>0.5 nm diameter) revealed the presence of stacking fault tetrahedra, dislocation loops and a certain number of unidentified clusters . Typical results in Cu and Au are shown in Fig. 1.

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers

2012 ◽  
Vol 717-720 ◽  
pp. 335-338 ◽  
Author(s):  
Xuan Zhang ◽  
Masahiro Nagano ◽  
Hidekazu Tsuchida
Keyword(s):  
Basal Plane ◽  
Nitrogen Doping ◽  
Weak Beam ◽  
Typical Morphology

Morphologies of BPDs in 4H-SiC epilayers with different nitrogen doping concentrations are explained in detail. While BPDs in low-doped epilayers have the typical morphology of gliding dislocations responding to stress, BPDs in highly doped ([N]≥1.0×1018 cm-3) epilayers are straight and tilt away from [11-20]. Structures of BPDs are further studied by weak-beam TEM.

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