Electron Microscopy of Semiconductors Reconstructed Surfaces

1983 ◽  
Vol 31 ◽  
Author(s):  
Pierre M. Petroff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Surface Reconstruction ◽  
Surface Steps ◽  
Transmission Electron ◽  
Dislocation Models ◽  
Reconstructed Surfaces ◽  
Reflection Electron Microscopy ◽  
Reconstructed Surface

ABSTRACTSurface sensitive transmission electron microscopy (SSTEM) and reflection electron microscopy (REM) have been used to analyze the Si (111) 1×1 → 7×7 surface reconstruction. The SSTEM and transmission electron diffraction results for the Si (111) 7×7 surface are interpreted using several possible “surface dislocation” models. The SSTEM and REM techniques have also been applied to the GaAs (100) MBE deposited surfaces. The rough surface topography for the c(4×4) reconstructed surface is attributed to surface steps motions and bunching upon interruption of the MBE deposition.

High Resolution Imaging of As-Grown Sapphire Surfaces

1985 ◽  
Vol 62 ◽  
Author(s):  
Tung Hsu ◽  
S. R. Nutt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Features ◽  
High Resolution Imaging ◽  
Sapphire Surface ◽  
Surface Steps ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Resolution Imaging ◽  
Surface Facets

ABSTRACTSurfaces of commercially grown edge-defined film-fed growth sapphire (EFG α-Al2O3) were studied in the electron microscope using both reflection electron microscopy (REM) and conventional transmission electron microscopy (TEM). The as-grown sapphire surface, ostensibly {1120}, was characterized by “rooftop” structures which were often locally periodic. These rooftop structures consisted of alternating {1120} facets and additional facets inclined a few degrees. The crystallography of the surface facets was analyzed using REM imaging of bulk specimens, and trace analysis of back-thinned plan section TEM specimens. Surface roughness was measured by stylus profilometry. and these measurements were compared to the electron microscopy observations. Fine structural features parallel to <0110> directions were also observed in both REM and TEM experiments, and these were attributed to surface steps of atomic scales.

Characterization of submicrometer fluid Inclusions in minerals by Analytical/Transmission Electron Microscopy and electron diffraction

1990 ◽  
Vol 48 (4) ◽  
pp. 424-424
Author(s):  
George Guthrie ◽  
David Veblen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Light Microscopy ◽  
Fluid Inclusions ◽  
Energy Dispersive Spectrometer ◽  
Analytical Transmission Electron Microscopy ◽  
Transmission Electron

The nature of a geologic fluid can often be inferred from fluid-filled cavities (generally <100 μm in size) that are trapped during the growth of a mineral. A variety of techniques enables the fluids and daughter crystals (any solid precipitated from the trapped fluid) to be identified from cavities greater than a few micrometers. Many minerals, however, contain fluid inclusions smaller than a micrometer. Though inclusions this small are difficult or impossible to study by conventional techniques, they are ideally suited for study by analytical/ transmission electron microscopy (A/TEM) and electron diffraction. We have used this technique to study fluid inclusions and daughter crystals in diamond and feldspar.Inclusion-rich samples of diamond and feldspar were ion-thinned to electron transparency and examined with a Philips 420T electron microscope (120 keV) equipped with an EDAX beryllium-windowed energy dispersive spectrometer. Thin edges of the sample were perforated in areas that appeared in light microscopy to be populated densely with inclusions. In a few cases, the perforations were bound polygonal sides to which crystals (structurally and compositionally different from the host mineral) were attached (Figure 1).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

TRANSMISSION ELECTRON MICROSCOPY OF SURFACE AND INTERFACIAL STEPS

1997 ◽  
Vol 04 (03) ◽  
pp. 559-566 ◽  
Author(s):  
J. M. GIBSON ◽  
X. CHEN ◽  
O. POHLAND
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Free Surface ◽  
Significant Loss ◽  
Stress Fields ◽  
Preliminary Results ◽  
Surface Steps ◽  
Transmission Electron ◽  
First Time

Transmission electron microscopy is uniquely able to extend techniques for imaging free surface steps to the buried interface regime, without significant loss of detail. Two mechanisms for imaging surface and interfacial steps by transmission electron microscopy are described. They are thickness contrast and strain contrast. The former reveals the position and approximate height of steps, whereas the latter detects stress fields which are commonly associated with steps. The basis for each of these methods is elaborated, and preliminary results are shown for step images at Si/SiO2 interfaces, where measurable stress fields have been directly detected for the first time.

Laser-Induced Oxidation and Crystallization of Thin Amorphous Sputtered Cr Films

1983 ◽  
Vol 29 ◽  
Author(s):  
M. I. Birjega ◽  
C. A. Constantin ◽  
M. Dinescu ◽  
I. Th. Florescu ◽  
I. N. Mihailescu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Laser Irradiation ◽  
Dwell Time ◽  
Free Standing ◽  
Transmission Electron Diffraction ◽  
Oxidation Processes ◽  
Transmission Electron ◽  
Power Densities

ABSTRACTThe crystallization and oxidation processes of thin, free-standing (FS), sputtered Cr films under the action of cw CO2 laser irradiation were studied by transmission electron microscopy (TEM) and transmission electron diffraction (TED). The crystallization is induced at power densities above 28.65 W cm−2, dwell time of 1 s, and the oxidation at power densities of 48.1 W cm−2 and longer dwell times.

Structural transformation of a kaolinite and calcite mixture to gehlenite and anorthite

2003 ◽  
Vol 18 (2) ◽  
pp. 475-481 ◽  
Author(s):  
Karfa Traoré ◽  
Philippe Blanchart
Keyword(s):  
Electron Microscopy ◽  
Phase Diagram ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Low Temperature ◽  
Orientation Relationship ◽  
Interlayer Spacing ◽  
Direct Transition ◽  
Transmission Electron ◽  
Successive Phase

Kaolinite mixed with calcite was sintered at low temperature (1100 °C; 5 °C/min). The successive phase transformations are metakaolinite to gehlenite and then anorthite, although the available phase diagram indicates a direct anorthite recrystallization. Transmission electron microscopy and electron diffraction studies of nanocrystallites revealed that the transformation path is favored by the structural similarities of phases. In particular, the pseudolayers of gehlenite have a major orientation relationship with the initial metakaolinite layers. The gehlenite axis, [001]G, is parallel to the metakaolinite axis, [001]A. This direct transition is favored by the existence of Si tetrahedral units and 4–fold–coordinated Al in both structures. Ca atoms, initially in the interlayer spacing of metakaolinite, remain in the interlayers of gehlenite. During the second transformation step, anorthite recrystallizes from gehlenite with axis [020]A parallel to [210]G. It is proposed that this orientation relationship is favored by the orientation and shape of Ca-atom channels through both structures, along [001]G and [100]A axes.

Models of Magnesium Oxide (111) Surface Reconstructions Obtained from Direct Phasing of Transmission Electron Diffraction Data

1997 ◽  
Vol 3 (S2) ◽  
pp. 1039-1040
Author(s):  
R. Plass ◽  
K. Egan ◽  
C. Collazo-Davila ◽  
D. Grozea ◽  
E. Landree ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Electron Diffraction Data ◽  
Vacuum Furnace ◽  
Transmission Electron Diffraction ◽  
Transmission Electron ◽  
Surface Reconstructions ◽  
Reflection Electron Microscopy ◽  
Plane Disk ◽  
Flowing Oxygen

It has long been thought that (111) surfaces of rock salt oxides microfacet to neutral surfaces upon annealing because of the very large energies involved in bulk terminating a layer of like ions. However in a recent reflection electron microscopy (REM) study Gajdardziska-Josifovska et al. found that MgO(lll) surfaces annealed in flowing oxygen furnaces at 1500°C not only did not microfacet, but displayed a √3×√3R30° surface periodicity that was stable in air. To determine the structure of this unusually stable surface MgO (111) transmission electron microscopy (TEM) samples were annealed in a vacuum furnace in the present study and their transmission electron diffraction (TED) patterns were analyzed with direct phasing methods.The TEM samples were prepared by orienting a MgO single crystal and sawing lmm wafers along a (111) plane. Disk samples were then ultrasonically drilled, dimpled, mechanically polished and/or hot nitric acid etched, and milled with 5 KeV Ar+ ions.

scholarly journals Probing planar defects in nanoparticle superlattices by 3D small-angle electron diffraction tomography and real space imaging

Nanoscale ◽  
2014 ◽  
Vol 6 (22) ◽  
pp. 13803-13808 ◽  
Author(s):  
Arnaud Mayence ◽  
Dong Wang ◽  
German Salazar-Alvarez ◽  
Peter Oleynikov ◽  
Lennart Bergström
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Real Space ◽  
Diffraction Tomography ◽  
Planar Defects ◽  
Pd Nanoparticle ◽  
Transmission Electron ◽  
Nanoparticle Superlattices ◽  
Microscopy Techniques

Planar defects in Pd nanoparticle superlattices were revealed by a combination of real and reciprocal space transmission electron microscopy techniques. 3D electron diffraction tomography was extended to characterize mesoscale imperfections.

HRTEM Investigation of Precipitates in Al-Zn-In-Mg-Ti-Ce Anode Alloy

2011 ◽  
Vol 189-193 ◽  
pp. 1036-1039
Author(s):  
Jing Ling Ma ◽  
Jiu Ba Wen ◽  
Yan Fu Yan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Hexagonal Structure ◽  
Orientation Relation ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Scanning Electron

The precipitates of Al-5Zn-0.02In-1Mg-0.05Ti-0.5Ce (wt %) anode alloy were studied by scanning electron microscopy, X-ray microanalysis, high resolution transmission electron microscopy and selected area electron diffraction analyses in the present work. The results show that the alloy mainly contains hexagonal structure MgZn2 and tetragonal structure Al2CeZn2 precipitates. From high resolution transmission electron microscopy and selected area electron diffraction, aluminium, Al2CeZn2 and MgZn2 phases have [0 1 -1]Al|| [1 -10]Al2CeZn2|| [-1 1 0 1]MgZn2orientation relation, and Al2CeZn2 and MgZn2 phases have the [0 2 -1]Al2CeZn2|| [0 1 -10]MgZn2orientation relation.

Sign in / Sign up

Export Citation Format

Share Document