Microstructure, Damage and Resistance during Electromigration Life-Testing of Al-Cu Interconnects
Keyword(s):
AbstractUnpassivated 1.4 mm long lines of Al-4wt.%Cu metallization have been successively imaged (by scanning electron microscopy) and electromigration stressed until failure. The resistance of lines, evolution of line microstructure and the development of electromigration damage are thus discontinuously recorded through the accelerated life-testing (260°C, 2 × 1010 A m-2). Correlations are made among microstructure evolution, electromigration damage development and line resistance. The probable mechanisms of damage development are discussed.
2021 ◽
Vol 2101
(1)
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pp. 012071
1976 ◽
Vol 3
(3)
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pp. 171-179
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1974 ◽
Vol 32
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pp. 12-13
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1977 ◽
Vol 35
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pp. 638-639
1978 ◽
Vol 36
(2)
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pp. 82-83
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1977 ◽
Vol 35
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pp. 512-513
1971 ◽
Vol 29
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pp. 410-411
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