Thermal Stress in Doped Silicate Glasses (B,P) Deposited by PECVD and LPCVD

1993 ◽  
Vol 308 ◽  
Author(s):  
H. Bouchard ◽  
A. Azelmad ◽  
J.F. Currie ◽  
M. Meunier ◽  
S. Blain ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Stress Measurement ◽  
Chemical Vapor ◽  
In Situ Stress ◽  
In Situ Stress Measurement ◽  
Pressure Chemical

ABSTRACTUsing an in situ stress measurement technique which measures stress as a function of annealing temperature, we have investigated the effect of phosphorous and boron doping of silicon dioxide glass films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD). The stress at room temperature is σi. Upon heating, it increases to a maximum, σm, corresponding to a temperature Tm, above which the stress is reduced to zero at a temperature T0. All these parameters plus the expansion coefficient are dependent on dopant concentrations and deposition technique.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiN x Passivation

2016 ◽  
Vol 63 (10) ◽  
pp. 3887-3892 ◽  
Author(s):  
Tongde Huang ◽  
Olle Axelsson ◽  
Thanh Ngoc Thi Do ◽  
Mattias Thorsell ◽  
Dan Kuylenstierna ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Noise Performance ◽  
Pressure Chemical ◽  
Gan Hemts

Variation de la contrainte des verres de silice sous cycle thermique

1992 ◽  
Vol 70 (10-11) ◽  
pp. 830-833
Author(s):  
H. Bouchard ◽  
A. Azelmad ◽  
J. F. Currie ◽  
M. Meunier
Keyword(s):  
Initial Stress ◽  
Vapor Deposition ◽  
Boron Content ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Pressure Chemical ◽  
Phosphosilicate Glass ◽  
Borophosphosilicate Glass

Using an in situ technique, stress was measured as a function of annealing temperature to investigate the effect of phosphorous and boron doping of silicon dioxide glass films deposited by low-pressure chemical vapor deposition (LPCVD). It was found that the initial stress of phosphosilicate glass is independent of the amount of phosphorus present, while the boron content influences the initial stress in borophosphosilicate glass. The stress increases to a maximum, σm, corresponding to a temperature Tm, above which the onset of viscous flow reduces the stress to zero at a temperature T0. All these parameters are dependant on dopant concentrations. The observed mechanical behavior is discussed in terms of film viscosity.

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