Influence of Rapid Thermal Processing Conditions on the Characteristics of Sputter Deposited Titanium Nitride Thin Films

1993 ◽  
Vol 303 ◽  
Author(s):  
Sesh Ramaswami ◽  
John Iacoponi ◽  
Robin Cheung
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Film Stress ◽  
Design Rule ◽  
Tin Films ◽  
Device Processing ◽  
Tin Thin Films ◽  
Sputter Deposited ◽  
Compact Design

ABSTRACTSputter deposited TiN films are commonly used as diffusion barriers for an aluminum based metallization and as glue layers for tungsten films in ULSI device processing. TiN is also used in conjunction with Ti and/or a-Si for local interconnect and salicide processing. For the above applications, TiN films are also subjected to rapid thermal processing.This paper discusses these applications focusing on sub-half micron technologies where high aspect ratio contacts causes poor step coverage at the base of the contacts and compact design rule requirements pose an additional burden to Ti-silicide processes. Preferred grain orientation, microroughness, film stress, sheet resistance, diffusion barrier qualities and analytical spectroscopy techniques have been used to characterize the material modifications by RTP of Ti and Ti/TiN thin films.

Rapid thermal processing of zirconia thin films produced by the sol‐gel method

1991 ◽  
Vol 70 (4) ◽  
pp. 2348-2352 ◽  
Author(s):  
R. Pascual ◽  
M. Sayer ◽  
C. V. R. Vasant Kumar ◽  
Lichun Zou
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Gel Method ◽  
Sol Gel Method

Effects of doping and rapid thermal processing in Y doped CdO thin films

2019 ◽  
Vol 776 ◽  
pp. 259-265 ◽  
Author(s):  
Mengting Xie ◽  
Wei Zhu ◽  
Kin Man Yu ◽  
Zishu Zhu ◽  
Guanzhong Wang
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Cdo Thin Films

scholarly journals Rapid thermal processing of self-assembling block copolymer thin films

2013 ◽  
Vol 24 (31) ◽  
pp. 315601 ◽  
Author(s):  
F Ferrarese Lupi ◽  
T J Giammaria ◽  
M Ceresoli ◽  
G Seguini ◽  
K Sparnacci ◽  
...  
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Self Assembling

scholarly journals MAGNETRON SPUTTERED NANOCRYSTALLINE TiN THIN FILMS AND CORROSION PROPERTIES

2020 ◽  
Vol 17 (35) ◽  
pp. 164-173
Author(s):  
Muslim Idan HAMIL ◽  
Mohammed K. KHALAF ◽  
Mundher AL-SHAKBAN
Keyword(s):  
Thin Films ◽  
Corrosion Current ◽  
X Ray Diffraction ◽  
Corrosion Properties ◽  
Uncoated Sample ◽  
Tin Films ◽  
Before And After ◽  
Tin Thin Films ◽  
Cohesion Degree ◽  
Thermally Treated

In this report, TiN nanocrystalline thin films were deposited on glass and Ti-6Al-4V substrates using a DC-magnetron sputtering technique. The TiN films were sputtered using a pure Ti target (99.9%) with 40W of power in Ar/N2 gas mixture atmosphere. The structure of the TiN films was characterized by X-Ray diffraction, as prepared films exhibited a (200) preferred orientation, while film annealed at 500 °C shows the (111), (200) and (311). Polycrystalline, cubic, (111)-orientated TiN films were produced by annealing temperature of 500 °C. The effect of deposited temperature on the microstructural morphologies of the thin films was studied by Field Emission Scanning Electron Microscope (FESEM). The particle size of the sputtered TiN films ranged from 50 to 70 nm and was strongly influenced by annealing temperatures, the morphology of the films deposited before and after annealing has a characteristic agglomeration of particles. Potentiodynamic polarization analysis of the TiN films confirms the inverse relationship between polarization resistance and corrosion current. The biocorrosion measurements for TiN films deposited on the Ti-6Al-4V substrate in 3.5% NaCl solution have also been obtained. Clear improvement in the corrosion resistance was observed rather than for untreated, especially for thermally annealed (500 oC) TiN/Ti-6Al-4V samples. The corrosion rate was 0.1458 mm/y for the uncoated sample, while 2.68510-4 mm/y for TiN/Ti-6Al-4V in samples after annealing. The average corrosion potential calculated was - 0.117 V. The results confirmed that coated alloys with 500 °C thermally treated exhibited a better electrochemical behavior compare with uncoated and non-thermally treated alloys possibly due to the better cohesion degree of the coatings.

Stress and Warpage Studies of Silicon Based Plain and Patterned Films During Rapid Thermal Processing (RTP)

1993 ◽  
Vol 303 ◽  
Author(s):  
R.P.S. Thakur ◽  
A. Martin ◽  
W.T. Fackrell ◽  
R. Barbour ◽  
J. L. Kawski ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Large Diameter ◽  
Rapid Thermal Processing ◽  
High Stress ◽  
Film Stress ◽  
Dislocation Slip ◽  
Cmos Process ◽  
Destructive Interference ◽  
Data Set ◽  
Patterned Structures

ABSTRACTSingle wafer rapid thermal processing (RTP) is emerging as a key player in the processing of advanced sub-half micron memory devices. The high temperature processing of large diameter silicon wafers can create sufficient thermal stress for generation of dislocation, slip, and gross mechanical instability of the wafer. The aforementioned factors may lead to loss of device yield, dielectric defects, and reduced photolithographic yield due to degradation of virtual wafer flatness. Moreover, the loss of geometrical planarity of wafer due to warpage can make it impossible to process a wafer or can lead to self-fracture of the wafer.In this paper we present the warpage and stress results of our study on plain and patterned structures that were subjected to RTP at different stages of the CMOS process flow. Experimental results have been gathered with full wafer scanning technology using non-contact capacitive probes to measure more accurate global stress values. The stress and warpage values on the patterned wafers could be measured accurately without any light scattering effects and destructive interference. It is reported that the thermal processing creates significant variations in shape change around the wafer which could be identified using the full wafer data set acquired using this evaluation technique. We have successfully tracked variations in film stress for both plain and patterned structures as a cumulative effect and correlated it with the overall wafer warpage. The effects of incoming wafer warpage, ramp rate in RTP, and high stress nitride films on the overall wafer warpage are also reported.

Surface microstructure of CIS thin films produced by rapid thermal processing

1994 ◽  
Vol 35 ◽  
pp. 129-139 ◽  
Author(s):  
W. Riedl ◽  
J. Rimmasch ◽  
V. Probst ◽  
F. Karg ◽  
R. Guckenberger
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Surface Microstructure

Fine Tuning of Lithographic Masks through Thin Films of PS-b-PMMA with Different Molar Mass by Rapid Thermal Processing

2014 ◽  
Vol 6 (10) ◽  
pp. 7180-7188 ◽  
Author(s):  
Federico Ferrarese Lupi ◽  
Tommaso Jacopo Giammaria ◽  
Gabriele Seguini ◽  
Francesco Vita ◽  
Oriano Francescangeli ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Molar Mass ◽  
Rapid Thermal Processing ◽  
Fine Tuning ◽  
Lithographic Masks

The Texture Effect on Diffusion Barrier Property on TiN Films between Copper and Si Wafer

2005 ◽  
Vol 495-497 ◽  
pp. 1371-1376
Author(s):  
Dong Young Sung ◽  
In Soo Kim ◽  
Min Gu Lee ◽  
No Jin Park ◽  
Bee Lyong Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Organic Chemical ◽  
Dense Structure ◽  
Tin Films ◽  
Tin Thin Films ◽  
Metal Organic ◽  
Better Than

TiN thin films are widely used as a coating material due to their good mechanical and conductivity properties, high thermal properties, strong erosion and corrosion resistance. Also TiN has been used in Si devices as a diffusion barrier material for Al and Cu-based metallization. The uniform and dense structure of thin films is influenced by the texture of films. It was good to have uniform and dense structure and bad to have an open columnar structure in TiN thin films. Therefore, the property of diffusion barrier of the TiN films in semiconductor also is related to the texture and microstructure of TiN coated layer. In this study, the relationship between the texture and microstructure and the best diffusion barrier propertiy of TiN coated films (by PVD and MOCVD) on semiconductor devices (Cu/TiN/SiO2/Si layer) were investigated under different processing conditions and textures. The property of diffusion barrier for Cu of physical vapor deposited TiN thin films is better than that of metal organic chemical vapor deposited TiN thin films. Also the property of diffusion barrier for Cu of (111) textured TiN thin films is better than that of (200) textured TiN thin films.

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