Processing and Characterization of HgBrxI2−x Radiation Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
C. Zhou ◽  
M. R. Squillante ◽  
L. P. Moy ◽  
P. Bennett
Keyword(s):  
Energy Gap ◽  
Visible Spectrum ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Electrical And Optical Properties ◽  
Radiation Sources ◽  
Photoconductive Detectors ◽  
Ternary Semiconductor ◽  
Nuclear Radiation Detectors

ABSTRACTThis paper reports our recent work on the crystal processing, structural and optical characterization of HgBrxI2−x nuclear radiation detectors. To understand the electrical and optical properties of the detectors, we measured the energy gap of HgBrxI2−x as a function of the Br/I ratio. The energy band of this ternary semiconductor compound can be modulated from 2. 1eV (HgI2) to 3.4eV (HgBr2) by adjusting its chemical composition. This energy scope covers a wavelength spectrum between 365nm and 596nm, much of the visible spectrum. Nuclear and photoconductive detectors were fabricated from HgBrxI2−x single crystals and the responses of these devices were investigated with different radiation sources (241Am, 137Cs).

Characterization of CdTe/n$^{+}$-Si Heterojunction Diodes for Nuclear Radiation Detectors

2007 ◽  
Vol 54 (4) ◽  
pp. 817-820 ◽  
Author(s):  
M. Niraula ◽  
K. Yasuda ◽  
K. Noda ◽  
K. Nakamura ◽  
I. Shingu ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Heterojunction Diodes ◽  
Nuclear Radiation Detectors

Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors

2012 ◽  
Vol 717-720 ◽  
pp. 549-552
Author(s):  
Alexander M. Ivanov ◽  
Anton V. Sadokhin ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski
Keyword(s):  
Energy Gap ◽  
Radiation Detectors ◽  
Wide Bandgap ◽  
Nuclear Radiation ◽  
Wide Bandgap Materials ◽  
Nuclear Radiation Detectors ◽  
Gap Width ◽  
Radiation Centers ◽  
Bandgap Materials

Polarization effect characteristically occurs in detectors based on wide-bandgap materials at considerable concentrations of radiation defects. The appearance of an electromotive force in the bulk of a detector is due to the long-term capture of carriers at deep levels related to radiation centers. The kinetics and strength of the polarization field have been determined. The capture can be controlled by varying the detector temperature, with a compromise reached at the "optimal" temperature between the generation current and the position of the deepest of the levels whose contribution to the loss of charge via capture is negligible. It has been found that the depth of a level (related to the energy gap width) is close to 1/3, irrespective of a material. The optimal temperatures are strictly individual for materials.

The Characterization of Germanium and Silicon for Nuclear Radiation Detectors.

1982 ◽  
Vol 16 ◽  
Author(s):  
L. S. Darken
Keyword(s):  
High Purity ◽  
Deep Level ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Extended Defects ◽  
Pure Material ◽  
Photothermal Ionization Spectroscopy ◽  
Transient Spectroscopy ◽  
Nuclear Radiation Detectors

ABSTRACTSemiconductor nuclear radiation detectors require deep depletion depths (0.03–3.0 cm) and effective charge collection distances which are several times longer than these depletion depths. These requirements place stringent limitations on the net electrically active impurity concentration, and on the concentration of deep centers which can trap carriers generated by the incident nuclear radiation. This need for extremely pure material distinguishes the interests and efforts of the semiconductor detector community from the rest of the semiconductor community. This paper reviews the characterization of shallow-level, deep-level, neutral, and extended defects in germanium and silicon for nuclear radiation detectors. Photothermal ionization spectroscopy has been used extensively to identify the residual hydrogenic impurities in high-purity (∣NA–ND∣ ≈ 1010–1011 cm−3 ) germanium and silicon. Deep level transient spectroscopy has been effectively used to detect and identify deeper levels in high-purity germanium. Residual neutral defects are not necessarily passive: they may complex to form deep or shallow levels, they may precipitate, or they may act as nucleation sites for precipitation. The properties of extended defects (dislocations, lineage, inclusions, precipitates) and their effects on device performance are fundamentally less well understood, as the origin of the electrical activity of these defects is uncertain. It has been found in numerous instances that chemical interactions among defects are important even in these high-purity semiconductors.

Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Laser Doping ◽  
Doping Technique ◽  
Nuclear Radiation Detectors
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