Sub-Nanosecond Detection of Heavy Ions Using Single-Crystal, Natural Type IIA Diamond

1993 ◽  
Vol 302 ◽  
Author(s):  
Sung Han ◽  
Stanley G. Prussin ◽  
Lawrence S. Pan ◽  
Stephen M. Lane ◽  
Don R. Kania ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electric Fields ◽  
Rise Time ◽  
Random Sampling ◽  
Heavy Ions ◽  
Recording System ◽  
Charge Collection ◽  
Defect Sites ◽  
High Bandwidth ◽  
Natural Type

ABSTRACTThe sub-nanosecond electrical transients induced by 5-MeV He+ and 10-MeV Si3+ ions have been measured in single-crystal, natural type Ila diamonds. The detectors were fabricated into conductivity modulated devices and were incorporated into 50-Ω high bandwidth transmission line structures. The electrical signals were recorded with a system based on a 70 GHz random sampling oscilloscope with the total recording rise time of 18.6 ±:0.6 ps.Signal rise times are less than 70 ps and fall times are less than 200 ps for electric fields in the range 3.8x104 - 1×105 V/cm. The plasma time appears to play a key role in defining the initial stages of the charge transport because signal rise times are much greater than the recording system rise time, especially with the Si-ion excitation. Furthermore, incomplete charge collection is quite severe even at the highest applied electric fields due to the dominance of carrier trapping/recombination at the defect sites.

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

2007 ◽  
Vol 54 (6) ◽  
pp. 2706-2713 ◽  
Author(s):  
S. Onoda ◽  
T. Ohshima ◽  
T. Hirao ◽  
K. Mishima ◽  
S. Hishiki ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Auger Recombination ◽  
Charge Collection

scholarly journals Structure of Quark Stars

2012 ◽  
Vol 8 (S291) ◽  
pp. 61-66 ◽  
Author(s):  
Fridolin Weber ◽  
Milva Orsaria ◽  
Hilario Rodrigues ◽  
Shu-Hua Yang
Keyword(s):  
Neutron Stars ◽  
Electric Fields ◽  
Heavy Ions ◽  
Strange Quark ◽  
Electron Gas ◽  
Central Star ◽  
Strange Quarks ◽  
Quark Stars ◽  
Star Density ◽  
High Electric Fields

AbstractThis paper gives an brief overview of the structure of hypothetical strange quarks stars (quark stars, for short), which are made of absolutely stable 3-flavor strange quark matter. Such objects can be either bare or enveloped in thin nuclear crusts, which consist of heavy ions immersed in an electron gas. In contrast to neutron stars, the structure of quark stars is determined by two (rather than one) parameters, the central star density and the density at the base of the crust. If bare, quark stars possess ultra-high electric fields on the order of 1018 to 1019 V/cm. These features render the properties of quark stars more multifaceted than those of neutron stars and may allow one to observationally distinguish quark stars from neutron stars.

Comparative Studies of Ionizing Radiation Detectors Made on the Basis of Various Types of Diamond Plates

2021 ◽  
Vol 23 (2) ◽  
pp. 68-75
Author(s):  
Altukhov A.A. ◽  
Keyword(s):  
Ionizing Radiation ◽  
Single Crystal ◽  
Comparative Studies ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Charge Collection ◽  
Alpha Radiation ◽  
Charge Collection Efficiency ◽  
Polarization Phenomena

The results of experiments on the study of polarization phenomena and the charge collection efficiency in test structures of diamond ionizing radiation detectors using diamond plates of various types, including single-crystal NRNT-type, single-crystal CVD-type, as well as polycrystalline type, when exposed to alpha-radiation with an energy of 5.5 MeV are presented. Studies have demonstrated the existence of a number of problems with the device quality of diamond plates that affect the performance of spec-trometric-type detectors.

scholarly journals Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3854 ◽  
Author(s):  
Jun-Young Cho ◽  
Muhammad Siyar ◽  
Woo Chan Jin ◽  
Euyheon Hwang ◽  
Seung-Hwan Bae ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Practical Applications ◽  
Defect Sites

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.

In-crystal Carrier Transport in Organic Single Crystal Transistors

2008 ◽  
Vol 1091 ◽  
Author(s):  
Jun Takeya ◽  
M. Yamagishi ◽  
Y. Tominari ◽  
Y. Iwasaki ◽  
M. Uno
Keyword(s):  
Single Crystal ◽  
Electric Fields ◽  
Carrier Transport ◽  
High Mobility ◽  
Organic Crystals ◽  
Double Gate ◽  
Intrinsic Semiconductor ◽  
Mobility Devices ◽  
Organic Single Crystal ◽  
Semiconductor Character

AbstractWe report a series of our experiments using organic single crystals to reach the maximum performance intrinsic to the materials. A consequence of the experiments is that a prescription for realizing high-mobility devices is to induce carriers in inner crystals to avoid scattering at the surfaces. Intrinsic-semiconductor character of the high-purity organic crystals favors thermal diffusion of the carriers into the crystals in the presence of weak gate-electric fields. Furthermore, it is demonstrated that the high-mobility transport of the in-crystal carriers are highlighted in double-gate single-crystal transistors with the two gate electric field balanced with each other.

Charge Collection Characterization of Polycrystalline n-GaAs Layers for Solar Cells

1981 ◽  
Vol 5 ◽  
Author(s):  
O. Paz ◽  
K. N. Bhat ◽  
J. M. Borrego
Keyword(s):  
Solar Cells ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Random Distribution ◽  
Charge Collection ◽  
Typical Cell ◽  
Metal Organic ◽  
Organic Process ◽  
Excitation Volume

ABSTRACTN–type Ga-As polycrystalline layers, grown on Mo substrates by the metal-organic process were investigated using the SEM. Micrographs of charge collection contrast indicate a fairly random distribution of high collection (bright) grains. In a typical cell about 1/3 of its area is bright, with nonuniformities in collection current within and between grains. These results correlate well with Isc measurements, and some of the variations betweencells is explained in terms of insufficient doping of the grain boundaries.Reducing the penetrating depth of the carriers' excitation volume results in lowering of the collection current. The measurements were normalized for changes in beam and EBIC current by a comparison with a single crystal cell of the same geometry. This degradation is explained in terms of contamination or damage of the layer close to the surface during growth.

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