Erbium Doped Semiconductor Thin Films Prepared by Rf Magnetron Sputtering

1993 ◽  
Vol 301 ◽  
Author(s):  
Hong Koo Kim ◽  
Cheng Chung Li ◽  
Xiao Ming Fang ◽  
James Solomon ◽  
Gerald Nykolak ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Silicate Glass ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Fluorescence Decay ◽  
Silica Films ◽  
Erbium Ions ◽  
Sputter Deposited ◽  
Er Doped ◽  
Glass Films

ABSTRACTHighly Er-doped (∼ 1020 atoms/cm3) silicon and silica films were deposited by RF magnetron sputtering. Erbium was doped into the host material by co-sputtering technique. Deposited films (0.5 - 1.2 µm thick) were characterized by photoluminescence (PL), secondary ion mass spectroscopy (SIMS), and fluorescence decay measurements. Er-doped silica glass films show a strong, room-temperature luminescence at 1.54 µm wavelength. In contrast, Er-doped silicon films show a weak luminescence at room temperature. However, a big enhancement in the Er3+ luminescence was observed after a proper annealing, for example, 900 °C for 30 to 120 min in air ambient, resulting in the luminescence intensities comparable with that of the Er-doped silica films. This enhancement is attributed to the oxygen incorporation into the Si host film during the annealing, thus forming an Er-doped oxide layer on top of the film. The result suggests that Er-O bonding plays important role in forming optically active erbium ions. Erdoped, three-component silicate glass (SiO2 + A12O3 + MgO) films were also sputter deposited to investigate the dependence of Er3+ luminescence on the host material's composition. Even stronger luminescence was observed from the Er-doped, three component silicate glass films compared with the Er-doped SiO2 films.

Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jiantuo Gan ◽  
Augustinas Galeckas ◽  
Vishnukanthan Venkatachalapathy ◽  
Heine N. Riise ◽  
Bengt G. Svensson ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Quartz Substrate ◽  
Rf Magnetron Sputtering ◽  
Considerable Improvement ◽  
Photoluminescence Properties ◽  
Radio Frequency Magnetron Sputtering ◽  
Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

2006 ◽  
Vol 957 ◽  
Author(s):  
Luis Manuel Angelats ◽  
Maharaj S Tomar ◽  
Rahul Singhal ◽  
Oscar P Perez ◽  
Hector J Jimenez ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Radio Frequency Magnetron Sputtering ◽  
Optical And Magnetic Properties ◽  
Doped Zno ◽  
Xrd Patterns ◽  
Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Silicon Germanium ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Germanium Oxide ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

High performance thin film transistor with HfSiO x dielectric fabricated at room temperature RF-magnetron sputtering

2013 ◽  
Vol 9 (4) ◽  
pp. 381-384 ◽  
Author(s):  
Dongkyu Cho ◽  
Sanghyun Woo ◽  
Jungil Yang ◽  
Donghee Lee ◽  
Yoosung Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering

LOW-TEMPERATURE GROWTH AND PHOTOLUMINESCENCE OF SiCN NANOPARTICLE FILM BY CONSECUTIVE RF MAGNETRON SPUTTERING

2004 ◽  
Vol 11 (06) ◽  
pp. 515-519 ◽  
Author(s):  
M. XU ◽  
V. M. NG ◽  
S. Y. HUANG ◽  
S. Y. XU
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Diffraction Intensity ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Pl Intensity ◽  
Aln Buffer ◽  
Nanoparticle Film

Low-temperature growth of SiCN nanoparticle films on an AlN buffer layer on Si (100) by consecutive RF magnetron sputtering is reported. The visible photoluminescence (PL) is observed between 620 and 670 nm using a single photo excitation at 514.5 nm. The growth of film at room temperature is found to yield the strongest PL intensity, whereas the film grown at 200°C corresponds to the lowest PL intensity. A similar variation of SiC diffraction intensity is also observed in XRD spectra. The photoluminescence of the SiCN film is discussed on the base of the morphological, structural and elemental analyse.

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