Electronic Structure of Si Doped by Rare-Earth Yb3+

1993 ◽  
Vol 301 ◽  
Author(s):  
Shang Yuan Ren ◽  
John D. Dow
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Spectral Density ◽  
Cluster Size ◽  
Deep Level ◽  
Deep Levels ◽  
Si Doped ◽  
Small Clusters ◽  
Vacancy Level

ABSTRACTThe electronic structure of Yb3+-doped Si is elucidated in terms of level repulsion between the Si vacancy's deep levels (and spectral density) and the Yb3+ levels, both for bulk Si and for small clusters. The 2F5/2 level of Yb3+ splits into a Γ8 level and a Γ6 level, with the Γ6 repelled most, by the nearby Γ6 (A1) level of the Si vacancy. The level-repulsion is either upwards or downwards in energy, depending on whether the Al-like vacancy level lies below or above this Yb3+ level. The 2F7/2 Yb 3+ level is split into Γ6, Γ7, and Γ8 sub-levels, all moving downwards in energy, with Γ6 moving most, again due to strong level repulsion from the nearby Al-like vacancy level, while the more-distant, higher-energy T2-like (Γ7 and Γ8) vacancy level produces a weaker repulsion. In small clusters, the Si-vacancy's wavefunctions and deep level energies are sensitive to cluster-size, and changes in them alter the level repulsion experienced by the Yb 3+ levels, even though the 4f electrons are localized.

Influence of CH4/H2 Reactive Ion Etching on Deep Levels in Si-Doped AlxGa1−xAs (x=0.25)

1993 ◽  
Vol 300 ◽  
Author(s):  
R. Pereira ◽  
M. Van Hove ◽  
M. de Potter ◽  
K. Van Rossum
Keyword(s):  
Electron Capture ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Ion Etching ◽  
Hall Measurements ◽  
First Order Kinetics ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Kinetics Of

The effect of CH4/H2 reactive ion etching (RIE) on Si-doped AlxGa1−xAs (x=0.25) is studied by deep level transient spectroscopy (DLTS) and Hall measurements. After RIE exposure, the samples were annealed between 250 and 500°C in order to study the recovery kinetics of deep and shallow levels. Non-etched reference samples showed broad DLTS spectra which were deconvoluted in two different emission peaks. We assigned them to DX1 and DX2 centers. The different deep levels are characierized by different aluminium configurations, one or two aluminium atoms, surrounding the silicon donor which are responsible for the DX centers. After RIE exposure and subsequent thermal annealing, a third emission peak is observed. This emission is attributed to the DX3 center, which is characterized by three aluminium atoms neighbouring the silicon donor. The recovery activation energy is calculated based on first-order kinetics. The activation energies are found to be around 1.9 eV in all cases.Complementary Hall measurements as a function of temperature (4-300 K) were used to characterize the electron capture of deep levels in Si-doped AlGaAs exposed to CH4/H2 RIE. We observed that the samples exposed to RIE and annealed at temperatures higher than 400°C exhibit electron capture in the 120-150 K temperature range. On the other hand, samples annealed at lower temperatures, showed additional capture features between 200 and 230 K.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Rare earth borocarbides: Electronic structure calculations and electric field gradients

2000 ◽  
Vol 62 (10) ◽  
pp. 6774-6785 ◽  
Author(s):  
M. Diviš ◽  
K. Schwarz ◽  
P. Blaha ◽  
G. Hilscher ◽  
H. Michor ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Electric Field ◽  
Electronic Structure Calculations ◽  
Electric Field Gradients ◽  
Field Gradients ◽  
Structure Calculations

Kathodo- und Photolumineszenz der Seltenerd-aktivierten Wirtsgitter Ba2La2B2+Te2O12 (B = Zn, Mg)

1986 ◽  
Vol 41 (6) ◽  
pp. 866-870 ◽  
Author(s):  
H.-D. Autenrieth ◽  
S. Kemmler-Sack
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Visible Region ◽  
Host Lattice ◽  
Rare Earth Ions ◽  
New Host ◽  
Emission Efficiency ◽  
Transfer Processes ◽  
Trivalent Rare Earth ◽  
Host Lattices

By activation of the new host lattices Ba2La2B2+Te2O12 (B = Zn, Mg) with trivalent rare earth ions Ln3+ = Pr. Sm, Eu, Tb, Dy, Ho, Tm an emission in the visible region is observed. The influence of the electronic structure and concentration on the relative emission efficiency as well as the host lattice participation in the energy transfer processes are discussed.

Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy

2006 ◽  
Vol 955 ◽  
Author(s):  
Mo Ahoujja ◽  
S Elhamri ◽  
M Hogsed ◽  
Y. K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Unknown Origin ◽  
Shallow Donor ◽  
Related Point ◽  
Line Defects ◽  
Si Doped ◽  
Transient Spectroscopy

ABSTRACTDeep levels in Si doped AlxGa1−xN samples, with Al mole fraction in the range of x = 0 to 0.30, grown by radio-frequency plasma activated molecular beam epitaxy on sapphire substrates were characterized by deep level transient spectroscopy (DLTS). DLTS measurements show two significant electron traps, P1 and P2, in AlGaN at all aluminum mole fractions. The electron trap, P2, appears to be a superposition of traps A and B , both of which are observed in GaN grown by various growth techniques and are thought to be related to VGa-shallow donor complexes. Trap P1 is related to line defects and N-related point defects. Both of these traps are distributed throughout the bulk of the epitaxial layer. An additional trap P0 which was observed in Al0.20Ga0.80N and Al0.30Ga0.70N is of unknown origin, but like P1 and P2, it exhibits dislocation-related capture kinetics. The activation energy measured from the conduction band of the defects is found to increase with Al mole content, a behavior consistent with other III-V semiconductors.

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