Preparation and Properties of Gallium Phosphide Doped by Rare-Earth Elements

1993 ◽  
Vol 301 ◽  
Author(s):  
Sergei L. Pyshkin ◽  
Alberto Anedda
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Gallium Phosphide ◽  
Energy Levels ◽  
Luminescence Decay ◽  
Luminescence Spectra ◽  
Standard Methods ◽  
Exciton Recombination ◽  
Valency Band ◽  
Luminescent Spectra

ABSTRACTGaP single crystals have been grown from 5at.% solution of P in Ga with (0.01-0.1)at.% of La, Sm or Gd as dopants. Electric properties, photoconductivity and luminescence of the crystals have been investigated by standard methods.Energy levels of impurities, mobility and concentration of current carriers have been determined in wide temperature region. It was shown that nitrogen (N) and other uncontrolled impurities present in the crystals due to some peculiarities of crystal growth. The intrinsic RE impurity luminescent spectra can be seen only together with spectra of excitons bounded on N traps. The evaluation of quantum eficiency for RE impurity made on the base of luminescence decay measurements gives the value close to 1. The interpretation of GaP:RE luminescence spectra is presented as intrashell transitions activated by bound exciton recombination as well as D-A and D-valency band transitions between some contaminating impurity (donor) and RE element (acceptor).

RARE-EARTH CRYSTAL GROWTH FROM THE VAPOR : Eu/Re AND Eu/W

1984 ◽  
Vol 45 (C9) ◽  
pp. C9-47-C9-52 ◽  
Author(s):  
A. J. Melmed ◽  
V. Maurice ◽  
O. Frank ◽  
J. H. Block
Keyword(s):  
Rare Earth ◽  
Crystal Growth

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

Crystal growth and metal-insulator transition in two-dimensional layered rare-earth palladates

2018 ◽  
Vol 2 (8) ◽  
Author(s):  
Yoshiko Nanao ◽  
Yoshiharu Krockenberger ◽  
Ai Ikeda ◽  
Yoshitaka Taniyasu ◽  
Michio Naito ◽  
...  
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

scholarly journals Synthesis, characterization, and single-crystal growth of a high-entropy rare-earth pyrochlore oxide

2020 ◽  
Vol 4 (10) ◽  
Author(s):  
Candice Kinsler-Fedon ◽  
Qiang Zheng ◽  
Qing Huang ◽  
Eun Sang Choi ◽  
Jiaqiang Yan ◽  
...  
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
High Entropy ◽  
Pyrochlore Oxide

Trends in Rare Earth Thiophosphate Syntheses: Rb3Ln(PS4)2 (Ln = La, Pr, Ce), Rb3-xNaxLn(PS4)2 (Ln = Pr, Ce; x = 0.50, 0.55), and RbEuPS4 Obtained by Molten Flux Crystal Growth

CrystEngComm ◽  
2021 ◽  
Author(s):  
Logan S Breton ◽  
Mark D. Smith ◽  
Hans-Conrad Zur Loye
Keyword(s):  
Rare Earth ◽  
Crystal Growth ◽  
Single Crystals ◽  
Molten Flux

Single crystals of new rubidium rare earth thiophosphates with the formulas Rb3Ln(PS4)2 (Ln = La, Pr, Ce), Rb3-xNaxLn(PS4)2 (Ln = Pr, Ce; x = 0.50, 0.55), and RbEuPS4 were crystallized...

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