Capacitance-Voltage-Method Carrier Concentration Depth Profiles in Liquid-Encapsulated-Czochralski-Technique Grown GaAs Wafers from Near-Stoichiometric and Extremely-Composition Melts

1993 ◽  
Vol 300 ◽  
Author(s):  
Yasuyijki Saito ◽  
Jhoji Nishio
Keyword(s):  
Carbon Content ◽  
Carrier Concentration ◽  
Thermal Cycle ◽  
Head Position ◽  
Czochralski Technique ◽  
Depth Profiles ◽  
Active Layers ◽  
Ft Ir ◽  
Melt Composition ◽  
Concentration Depth Profiles

ABSTRACTIt was observed that carrier concentration depth profiles under 200μm-diameter gold Schottky electrodes of deeply Si-implanted electrically active layers on undoped semi-insulating GaAs wafers depend on melt composition of liquid-glass encapsulation Czochralski technique (LEC) growth, Fourier-transformed infrared (FT-IR) measurement carbon content of LEC growth, and consecutive cooling thermal cycle of LEC growth. In the range of this experiment, for head position of boules and 2.5 × 10exp.12/cm2 Si dosage, peak carrier concentrations of As-rich melt LEC growth (initial: [As]/([As]+[Ga])≃0.526) were comparable to or slightly higher than those of near-stoichiometric melt LEC growth. For tail position and 3 × 10exp.12/cm2 Si dosage, a peak carrier concentration of a father As-rich melt LEC-growth was clearly higher than that of Ga-rich melt LEC-growth. LEC-grown melt composition effect depended on consecutive cooling thermal cycle. For peak carrier concentration dispersion of head position, there was anticorrelation between carbon content of FT-IR measurement and peak carrier concentration dispersion.

Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
Debra L. Kaiser ◽  
Piotr Becla
Keyword(s):  
Carrier Concentration ◽  
Vapor Phase ◽  
Infrared Detector ◽  
Vapor Phase Epitaxy ◽  
Diffusion Method ◽  
Depth Profiles ◽  
Growth Properties ◽  
Concentration Depth Profiles

ABSTRACTClose-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

Concentration Depth Profiles of Microplastic Particles in River Flow and Implications for Surface Sampling

2021 ◽  
Vol 55 (9) ◽  
pp. 6032-6041
Author(s):  
Win Cowger ◽  
Andrew B. Gray ◽  
James J. Guilinger ◽  
Brandon Fong ◽  
Kryss Waldschläger
Keyword(s):  
River Flow ◽  
Surface Sampling ◽  
Depth Profiles ◽  
Concentration Depth Profiles

Heat-Resistant Barrier Contacts Made on the Basis of TiBx and ZrBx to SiC and GaN

2009 ◽  
Vol 615-617 ◽  
pp. 565-568 ◽  
Author(s):  
Alexander A. Lebedev ◽  
A.E. Belyaev ◽  
N.S. Boltovets ◽  
V.N. Ivanov ◽  
Raisa V. Konakova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Phase Composition ◽  
Heat Resistance ◽  
Contact Structure ◽  
Schottky Barriers ◽  
Electrophysical Properties ◽  
Depth Profiles ◽  
Contact Metallization ◽  
Before And After ◽  
Concentration Depth Profiles

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

Assessment of biofilm changes and concentration-depth profiles during arsenopyrite oxidation by Acidithiobacillus thiooxidans

2017 ◽  
Vol 24 (24) ◽  
pp. 20082-20092 ◽  
Author(s):  
Hugo Ramírez-Aldaba ◽  
Jorge Vazquez-Arenas ◽  
Fabiola S. Sosa-Rodríguez ◽  
Donato Valdez-Pérez ◽  
Estela Ruiz-Baca ◽  
...  
Keyword(s):  
Acidithiobacillus Thiooxidans ◽  
Depth Profiles ◽  
Concentration Depth Profiles

Parameters for Nitrogen Diffusion in Ni, Ti, and Al Obtained from Implanted Bilayers

1992 ◽  
Vol 279 ◽  
Author(s):  
K. K. Bourdelle ◽  
D. O. Boerma
Keyword(s):  
Nuclear Reaction ◽  
Room Temperature ◽  
Vacuum Annealing ◽  
Nitride Layer ◽  
Nuclear Reaction Analysis ◽  
Nitrogen Diffusion ◽  
Depth Profiles ◽  
Solid Interface ◽  
Before And After ◽  
Concentration Depth Profiles

ABSTRACTNi foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.

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