An Optimization Study of Thermal Stability of W/GaAs Schottky Gates
Keyword(s):
Rf Power
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ABSTRACTThis paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100°C.
High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes)
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2015 ◽
Vol 19
(2)
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pp. 105-112
1973 ◽
Vol 120
(12)
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pp. 1767
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Keyword(s):
2012 ◽
Vol 512-515
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pp. 1018-1021
2014 ◽
Vol 1033-1034
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pp. 931-936