A Mass Spectrometric System for the Study of Transient Plasma Species in Thin Film Deposition

1983 ◽  
Vol 30 ◽  
Author(s):  
N.P. Johnson ◽  
A.P. Webb ◽  
D.J. Fabian
Keyword(s):  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Mass Spectrometric ◽  
Film Deposition ◽  
Rf Discharge ◽  
Rf Plasma ◽  
Gaseous Species ◽  
Reactive Plasma ◽  
Torr Pressure ◽  
Transient Plasma

ABSTRACTA system is described for mass spectrometric detection of transient gaseous species involved in reactive plasma deposition of materials. The equipment comprises a three stage differentially pumped UHV quadrupole mass spectrometer chamber, which permits modulated molecular beam sampling over a short path-length, direct from the plasma at 0.1–1.0 torr pressure. Operation of the system and optimum conditions for maximum signal-detection are detailed, and preliminary results for species formed in a silane-argon high-power rf discharge are reported. Spectra mostly agree with those obtained by Turban and Catherine using a lower power rf plasma, although some evidence is observed for the formation of increased SiH species at higher power.

scholarly journals Atmospheric Pressure Plasma Deposition of Organosilicon Thin Films by Direct Current and Radio-frequency Plasma Jets

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1296
Author(s):  
Iryna Kuchakova ◽  
Maria Daniela Ionita ◽  
Eusebiu-Rosini Ionita ◽  
Andrada Lazea-Stoyanova ◽  
Simona Brajnicov ◽  
...  
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Plasma Deposition ◽  
Atmospheric Pressure Plasma ◽  
Polymeric Materials ◽  
Thin Film Deposition ◽  
Plasma Jets ◽  
Film Deposition ◽  
Rf Plasma ◽  
Pressure Plasma

Thin film deposition with atmospheric pressure plasmas is highly interesting for industrial demands and scientific interests in the field of biomaterials. However, the engineering of high-quality films by high-pressure plasmas with precise control over morphology and surface chemistry still poses a challenge. The two types of atmospheric-pressure plasma depositions of organosilicon films by the direct and indirect injection of hexamethyldisiloxane (HMDSO) precursor into a plasma region were chosen and compared in terms of the films chemical composition and morphology to address this. Although different methods of plasma excitation were used, the deposition of inorganic films with above 98% of SiO2 content was achieved for both cases. The chemical structure of the films was insignificantly dependent on the substrate type. The deposition in the afterglow of the DC discharge resulted in a soft film with high roughness, whereas RF plasma deposition led to a smoother film. In the case of the RF plasma deposition on polymeric materials resulted in films with delamination and cracks formation. Lastly, despite some material limitations, both deposition methods demonstrated significant potential for SiOx thin-films preparation for a variety of bio-related substrates, including glass, ceramics, metals, and polymers.

scholarly journals Multivariate Correlation Analysis of the Electroconductive Textiles Obtained Using Functionalization by Radio-Frequency Oxygen Plasma Treatments

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5609
Author(s):  
Raluca Maria Aileni ◽  
Laura Chiriac ◽  
Doina Toma ◽  
Irina Sandulache
Keyword(s):  
Thin Film ◽  
Correlation Analysis ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Multivariate Correlation ◽  
Hydrophilic Character ◽  
Fabric Surface ◽  
O2 Plasma ◽  
Multivariate Correlation Analysis

This paper presents a study concerning the preliminary treatments in radiofrequency (RF)oxygen (O2) plasma used to obtain a hydrophilic effect on raw cotton fabrics followed by electroconductive thin film deposition to obtain electroconductive textile surfaces. In addition, this study presents a multivariate correlation analysis of experimental parameters. The treatment using RF plasma O2 aimed to increase the hydrophilic character of the raw fabric and adherence of paste-based polymeric on polyvinyl alcohol (PVA) matrix and nickel (Ni), silver (Ag) or copper (Cu) microparticles. The purpose of the research was to develop electroconductive textiles for flexible electrodes, smart materials using a clean technology such as radiofrequency (RF) plasma O2 to obtain a hydrophilic surface with zero wastewater and reduced chemicals and carbon footprint. To achieve the foreseen results, we used advanced functionalization technologies such as RF plasma O2, followed by scraping a thin film of conductive paste-based Ni, Ag or Cu microparticles, and multivariate correlation methods to observe the dependence between parameters involved (dependent and independent variables). Overall, the fabrics treated in plasma with O2 using a kHz or MHz generator and power 100–200 W present an excellent hydrophilic character obtained in 3 min. After RF O2 plasma functionalization, a thin film based on polymeric matrix PVA and Ni microparticles have been deposited on the fabric surface to obtain electroconductive materials.

A novel industrial thin film deposition technology for sustainable CdTe photovoltaics

2012 ◽  
Vol 1447 ◽  
Author(s):  
P. Nozar ◽  
G. Mittica ◽  
S. Milita ◽  
C. Albonetti ◽  
F. Corticelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Deposition ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Cubic Phase ◽  
Pulsed Plasma ◽  
Grid Parity ◽  
Type Semiconductor ◽  
Pulsed Plasma Deposition ◽  
Quartz Substrates

ABSTRACTCdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the literature for the crystalline cubic phase of the CdTe.The films are highly crystalline with a predominant cubic phase, a random orientation of the grains of the film and have an extremely low surface roughness of 4.6±0.7 nm r.m.s.. The low roughness, compared to traditional thermal deposition methods (close space sublimation and vapour transport) permits the reduction of the active absorber and n-type semiconductor layers resulting in a dramatic reduction of material usage and the relative deposition issues like safety, deposition rate and ultimately cost

Radio frequency expanding plasmas at low, intermediate, and atmospheric pressure and their applications

2008 ◽  
Vol 80 (9) ◽  
pp. 1919-1930 ◽  
Author(s):  
Gheorghe Dinescu ◽  
Eusebiu R. Ionita
Keyword(s):  
Radio Frequency ◽  
Atmospheric Pressure ◽  
Thin Film Deposition ◽  
Plasma Jets ◽  
Film Deposition ◽  
High Mass ◽  
Rf Plasma ◽  
Temperature Sensitive ◽  
Large Size ◽  
Wide Range

We report on the operation and characteristics of radio frequency (RF) plasma beam sources based on the expansion of the discharge outside of limited spaces with small interelectrode gaps. The appropriate electrode configuration, combined with high mass flow values and appropriate power levels, leads to small- or large-size plasma jets, working stably at low, intermediate, and atmospheric pressures. The sources are promising tools for a wide range of applications in thin film deposition, surface modification, and cleaning, including the case of temperature-sensitive substrates.

Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
A. Putnis ◽  
K. K. Chan ◽  
K. J. Clay ◽  
...  
Keyword(s):  
Breakdown Strength ◽  
Electrical Breakdown ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Rf Plasma ◽  
Type I ◽  
Si Substrates ◽  
Semiconducting Properties ◽  
Electrical Breakdown Strength ◽  
Poly Crystalline Diamond

ABSTRACTThin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.

Optimization of a Dual-Mode RF / Microwave Plasma for Amorphous thin film Deposition

1994 ◽  
Vol 336 ◽  
Author(s):  
R. Etemadi ◽  
O. Leroy ◽  
B. Drevillon ◽  
C. Godet
Keyword(s):  
Thin Film ◽  
Microwave Plasma ◽  
Plasma Deposition ◽  
Plasma Chemistry ◽  
High Growth ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
High Growth Rate ◽  
Film Deposition ◽  
Dual Mode

ABSTRACTA new dual-plasma (surface wave-coupled microwave and capacitively-coupled radiofrequency) PECVD reactor for high growth rate of Amorphous insulating alloys is being developped. A high flexibility for thin film materials synthesis is expected, because the energy of the ion bombardment can be monitored independently from the microwave plasma chemistry. In situ diagnostics (Optical EMission Spectroscopy and Spectroscopie Ellipsometry) are used for the optimization of the dual-Mode plasma deposition of hydrogenated Amorphous silicon a-Si:H and silicon oxides a-SiOx:H (with 0 ≤ × ≤ 2). The growth of stoichiometric oxide at 3.3 nm / s has been achieved.

Growth of AlN and TiN Structures by Plasma-Enhanced Pulsed Laser Deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Edward Poindexter ◽  
Yan Xin ◽  
Steven M. Durbin
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Plasma Source ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Rf Plasma ◽  
Nitrogen Species ◽  
Active Nitrogen

AbstractNitride materials are of interest for a wide variety of applications, including wear-resistant coatings, insulating layers, high-temperature semiconductor devices, and short-wavelength emitters and detectors. TiN and AlN appear to be particularly amenable to crystalline thin film deposition, with stoichiometric material easily obtained even without the use of active nitrogen species. This paper describes the growth of crystalline AlN and TiN thin films on silicon and sapphire substrates using a KrF excimer laser (λ = 248 nm) to ablate elemental metallic targets, and an inductively-coupled RF plasma source to supply active nitrogen species. Growth was monitored in-situ using reflection high-energy electron diffraction (RHEED), and films were characterised using fourier-transform infrared spectroscopy (FTIR) and electron microscopy techniques. Optimised growth conditions led to single-crystal growth of TiN on both substrates, but only polycrystalline AlN was formed directly. Use of a TiN buffer layer on (0001) sapphire led to the successful growth of a single-crystal AlN layer as confirmed by RHEED and high-resolution transmission electron microscopy (HRTEM).

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

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