Electroluminescence Evaluation of the SiO2-Si Structures Using an Electrolyte-SiO2-Si Cell

1993 ◽  
Vol 298 ◽  
Author(s):  
A.P. Baraban ◽  
P.P. Konorov ◽  
S.A. Bota ◽  
J.R. Morante

AbstractThe use of an Electrolyte-SiO2-Si system allows a detailed control of the electron injection from the electrolyte into SiO2 layer, and makes feasible to reach the electron heating in the conduction band of SiO2 before to take place the irreversible breakdown.The injected and heated electrons enhance the probability of the SiO2 defect excitation as well as the Si-O bond breaking. Both features give raise to the relaxation processes which are responsible of the electroluminescence characteristics of the oxide. So, the measured electroluminescence spectrum presents straightforward information on the defect types, their nature and possible precursor defect behaviour. Results on silicon oxides obtained from different technological processes and treatments, corroborate the above analysis and show the electro-luminescence of SiO2 as an interesting and powerful method to evaluate the SiO2 properties.

2006 ◽  
Vol 74 (23) ◽  
Author(s):  
H. Bachau ◽  
A. N. Belsky ◽  
P. Martin ◽  
A. N. Vasil’ev ◽  
B. N. Yatsenko

Author(s):  
S. A. Tikhomirov

Herein, the dynamics and mechanisms of induced absorption in thin samples of gallium selenide under various excitation conditions are studied using femtosecond kinetic spectroscopy. We have registered several types of induced changes including induced absorption on free charge carriers (“hot” and thermalized electrons), bleaching and absorption due to the population of near-edge trap or exciton states, as well as rapid changes in the absorption of probing radiation in the region of the overlap of the exciting and probing pulses due to two-quantum two-frequency interband transitions. The time ranges of the relaxation processes are estimated. It is shown that when using relatively low-intensity long-wave excitation (790 nm), the resonant excitation of the near-edge states occurs mainly due to two-quantum two-frequency transitions followed by the formation of the dynamic equilibrium between bound and free electrons in the time range up to 5 ps. When electrons are excited deeply into the conduction band with the formation of hot free electrons and their subsequent thermalization to the bottom of the conduction band in the time range up to 1 ps, the population of the near-edge states and the establishment of the dynamic equilibrium between bound and free electrons is realized in the same time range (5 ps) as when they are excited “from below”.


2009 ◽  
Vol 98 (3) ◽  
pp. 679-689 ◽  
Author(s):  
H. Bachau ◽  
A. N. Belsky ◽  
I. B. Bogatyrev ◽  
J. Gaudin ◽  
G. Geoffroy ◽  
...  

Author(s):  
L. Adhikari ◽  
G.P. Zank ◽  
L.-L. Zhao ◽  
M. Nakanotani ◽  
S. Tasnim

The article is devoted to reengineering of technological processes - a method of their qualitative transformation on an innovative basis, which in turn assumes the availability of tools that make it possible to establish the economic efficiency and technical capability of such transformations of construction production, to identify the effect of their implementation. In this regard, the problem of forming a parametric model of reengineering of construction technological processes, which involves four enlarged groups of indicators that reflect the quantitative and qualitative characteristics of the processes: materials used, working time, machine time, spatial organization, is considered. It is established that parameters can have either an absolute (physical, cost) or relative (point, percentage) expression and also make their own decomposition. The practical significance of the provisions given in the article is determined by the development of methods of technical rationing, which leads to a reduction in the cost and duration of construction.


2018 ◽  
Vol 189 (03) ◽  
pp. 271-280
Author(s):  
Aleksandr A. Makarov ◽  
Evgenii A. Ryabov

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