Nanocrystalline SiC Formation From Sputter-Deposited Non-Equilibrium a-SixC1−x Alloys

1993 ◽  
Vol 298 ◽  
Author(s):  
Hong Wang ◽  
Z. Ma ◽  
L. H. Allen ◽  
J. M. Rigsbee

AbstractThere exists considerable interest in the synthesis of nanocrystalline SiC particles embedded in an a-SixC1−x:H matrix. This study investigated the formation of nanocrystalline SiC by annealing a non-equilibrium a-Si0.35C0.65 alloy sputter deposited onto oxidized (100) Si. Evolution of the microstructure was characterized by thin film sheet resistance measurements, glancing angle X-ray diffraction (GAXRD) and transmission electron microscopy (TEM). It was found that films annealed at temperatures below 850°C remained amorphous. Annealing at temperatures above 850°C resulted in the formation of SiC nanocrystallites, as revealed by GAXRD and TEM. The electrical conductivity also showed an abrupt increase around 950°C. Prolonged annealing resulted in a further increase in conductivity, implying that the transformation continued. Annealing at 1100°C for 3 hours increased the film conductivity by two orders of magnitude relative to the as-deposited film.

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.


1999 ◽  
Vol 583 ◽  
Author(s):  
Martin Schmidbauer ◽  
Thomas Wiebach ◽  
Helmut Raidt ◽  
Peter Schäfer ◽  
Michael hanke ◽  
...  

AbstractThe strain distribution inside and in the vicinity of coherently strained self-organized islands has been investigated by high-resolution x-ray diffraction (HRXRD). Finite element method (FEM) calculations were carried out in order to calculate the strain field, which was then used to simulate x-ray reciprocal space maps on the basis of kinematical scattering theory. For Si0 75Ge0.25 islands an abrupt increase in the Ge-concentration at about one third of the island height has been found. This behavior can be attributed to different nucleation stages during growth. Highly strained buried CdSe quantum dots (QDs) strongly influence the surrounding ZnSe matrix. From reciprocal space maps and FEM simulations we were able to estimate the shape and size of the islands. The results are in agreement with transmission electron microscopy (TEM) and UHV atomic force microscopy (AFM) data.


2010 ◽  
Vol 636-637 ◽  
pp. 485-490 ◽  
Author(s):  
Paul Erve T. Ngnekou ◽  
Marie Christine Lafont ◽  
François Senocq ◽  
Jacques Lacaze ◽  
Bernard Viguier

Thermogravimetry was used to study the oxidation behaviour of a lamellar Ti46Al8Nb alloy during holding at 700°C in synthetic air. A parabolic plot of the oxidation kinetics shows three different regimes over the total duration (50 h) of the tests corresponding to decreasing values of the parabolic rate constant. The oxide scale was characterized by glancing-angle X-Ray diffraction and transmission electron microscopy. The scale was found to be bi-layered with an outer part that consists of amorphous aluminium rich oxide whilst the inner layer is made of very small cristalites of titania distributed in the same amorphous oxide.


1988 ◽  
Vol 128 ◽  
Author(s):  
J. S. Huang ◽  
R. G. Musket ◽  
M. A. Wall

ABSTRACTPolycrystalline niobium was implanted with 200, 100, and 50 keV carbon ions to create a uniform distribution of carbon over a thickness of about 0.25 μm. Samples implanted with calculated carbon content of 0.6, 1.9, 5.8, and 16 atomic percent were prepared, and the uniformity of the carbon distribution with depth was confirmed by Auger electron spectroscopy analysis. Glancing-angle X-ray diffraction analysis and transmission electron microscopy were used to characterize the phases and microstructures formed. The results indicated that no detectable second phases were present except on the surfaces where an amorphous phase and many particles were formed from contamination. Despite the low equilibrium solubility limit of carbon in Nb, we have created metastable solid solutions of Nb and C with carbon contents as high as 16 at.%.


1983 ◽  
Vol 21 ◽  
Author(s):  
S. Matsumura ◽  
A. Sonobe ◽  
K. Oki ◽  
T. Eguchi

ABSTRACTTwo kinds of process of ordering with phase separation, B2 or DO3 → (A2 + DO3), on annealing at a temperature of 873 K in an alloy of Fe-6 at%Al-9 at%Si were investigated by means of transmission electron microscopy and X-ray diffraction. The decomposition of DO3 phase proceeds by the development of periodic fluctuations along <100> directions in both B2 and DO3 types of degree of order. Newly born DO3 domains take the form of rectangular prism and align along <100> directions. In the transition from B2, on the contrary, there is a marked difference between the morphologies of the fluctuations in the two types of degree of order at the early stage of annealing. The degree of B2 type order fluctuates along <100> directions, while the fluctuation in the degree of DO3 type order does not form the <100> modulated structure sat the early stage of annealing. The morphology after a prolonged annealing is similar to that in the case of DO3 → (A2 + DO3).


1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.


Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 138
Author(s):  
Da Xu ◽  
Yafei Yuan ◽  
Huanfeng Zhu ◽  
Ling Cheng ◽  
Chunmin Liu ◽  
...  

Strontium titanate thin films were deposited on a silicon substrate by radio-frequency magnetron sputtering. The structural and optical properties of these films were characterized by X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. After annealing at 600–800 °C, the as-deposited films changed from amorphous to polycrystalline. It was found that an amorphous interfacial layer appeared between the SrTiO3 layer and Si substrate in each as-deposited film, which grew thicker after annealing. The optical parameters of the SrTiO3 film samples were acquired from ellipsometry spectra by fitting with a Lorentz oscillator model. Moreover, we found that the band gap energy of the samples diminished after thermal treatment.


1989 ◽  
Vol 157 ◽  
Author(s):  
J. S. Huang

ABSTRACTPolycrystalline niobium was implanted with 200-keV C+ ions to a total fluence of 7 × 1017 carbon ions per cm2 (C/cm2). Auger electron spectroscopy (AES) analysis showed that the carbon concentration varied from 5 to 50 at.% within a depth of about 4000 Å. Glancing-angle x-ray diffraction analysis (XRDA) and transmission electron microscopy (TEM) analysis indicated that no Nb2C phase was formed and that a buried fee NbC layer was formed in the region where carbon content exceeds about 40 at.%. The absence of Nb2C was attributed to its narrow range of solubility for carbon and the low diffusivity of carbon atoms. The possibility of the NbC precipitation by nucleation and growth or by a diffusionless martensitic transformation is discussed. When the implanted samples were annealed at 1273 K for 1 h, an orthorhombic Nb2C phase formed as spherical precipitates and the implanted carbon redistributed.


2007 ◽  
Vol 121-123 ◽  
pp. 45-48 ◽  
Author(s):  
T. Yu ◽  
C.H. Sow ◽  
X.J. Xu ◽  
Y.W. Zhu ◽  
Chwee Teck Lim ◽  
...  

Flake-shaped hematite (α-Fe2O3) nanostructure has been successfully fabricated by using a hot-plate to directly heat Fe foil or Fe-coated substrates in air at 300oC. After heating, the surface of the samples was found to be populated with α-Fe2O3 nanoflakes. Such growth of α-Fe2O3 nanoflakes was very substrate-friendly. They can be formed on blank Si wafer, patterened Si, AFM tips, silica sphere, quartz, glass slide, Al foil and electrochemically etched W tip. The formation process and the final products were investigated by glancing angle x-ray diffraction (GAXRD), micro-Raman, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results indicate the final products are single crystalline α-Fe2O3 nanoflakes vertically standing on the Fe3O4 film that acts as the precursor for growth of α-Fe2O3. The α-Fe2O3 nanoflakes formed by this method show very sharp tip with the tip radii as small as several nanometers and large surface to volume ratio. Such nanoflakes may be potentially useful as novel candidates for future electron field emission and gas senor devices. Furthermore, it is believed that this simple and substrates-friendly method is useful in extending the applications of α-Fe2O3 nanostructures.


1987 ◽  
Vol 103 ◽  
Author(s):  
Ivo J. M. M. Raaijmakers ◽  
Piet H. Oosting ◽  
Alec H. Reader

ABSTRACTThe reactions in sputter deposited Si-Ti-Si diffusion couples were investigated with X-ray diffraction, Auger electron spectroscopy and cross-section transmission electron microscopy. Anneals at a temperature of 400°C resulted in the growth of an amorphous phase at the Si-Ti interfaces. Crystalline silicides were only found after an anneal at temperatures of 500°C or higher.It was demonstrated that an amorphous layer of approximately 8 nm thickness sustained a concentration gradient from about 73% Si at the Si side to about 28% Si at the Ti side of the diffusion couple. The measured width of the phase field agreed with the width predicted from a calculated free energy versus composition diagram. Actually the observed phase field was found to be so wide, that it contains the stoichiometry of all equilibrium silicides. The consequences of our results for the explanation of silicide first phase nucleation were discussed.


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