Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H
Keyword(s):
We report new measurements of the diffusion length of minority photocarriers in thin film amorphous silicon field effect transistor structures. We are able to vary the majority carrier photoconductance by more than four orders of magnitude while monitoring the effective ambipolar diffusion length using the photocarrier grating technique.
2017 ◽
Vol 4
(5)
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pp. 6342-6348
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2017 ◽
Vol 92
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pp. 733-740
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Keyword(s):
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1988 ◽
Vol 27
(Part 2, No. 12)
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pp. L2379-L2381
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2020 ◽
Vol 19
(4)
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pp. 1485-1493
1988 ◽
Vol 215
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pp. 301-305
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