Use of a Field Effect Transistor to Study Phototransport Properties of a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
A. R. Grant ◽  
P. D. Persans ◽  
R. F. Kwasnick ◽  
G. E. Possin

We report new measurements of the diffusion length of minority photocarriers in thin film amorphous silicon field effect transistor structures. We are able to vary the majority carrier photoconductance by more than four orders of magnitude while monitoring the effective ambipolar diffusion length using the photocarrier grating technique.

1985 ◽  
Vol 49 ◽  
Author(s):  
H. Pfleiderer ◽  
W. Kusian

AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.


1988 ◽  
Vol 27 (Part 2, No. 12) ◽  
pp. L2379-L2381 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3613-3620 ◽  
Author(s):  
Nan Cui ◽  
Hang Ren ◽  
Qingxin Tang ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.


2006 ◽  
Vol 89 (14) ◽  
pp. 143507 ◽  
Author(s):  
Elias Said ◽  
Xavier Crispin ◽  
Lars Herlogsson ◽  
Sami Elhag ◽  
Nathaniel D. Robinson ◽  
...  

1988 ◽  
Vol 215 ◽  
pp. 301-305 ◽  
Author(s):  
Eiichi Tamiya ◽  
Atsushi Seki ◽  
Isao Karube ◽  
Masao Gotoh ◽  
Isamu Shimizu

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