The µτ Problem: New Results on Micro-Doped a-Si:H Films

1993 ◽  
Vol 297 ◽  
Author(s):  
Natalie BECK ◽  
Nicolas WYRSCH ◽  
Evelyne SAUVAIN ◽  
Arvind SHAH
Keyword(s):  
Steady State ◽  
Cross Sections ◽  
Time Of Flight ◽  
Capture Cross ◽  
Dangling Bond ◽  
Recombination Model ◽  
Transient And Steady State ◽  
Capture Cross Sections

Comparative µτ-product measurements performed on a series of slightly doped (micro- doped) a-Si:H films by steady-state photocarrier grating (SSPG), steady-state photoconductivity (SSPC) and time of flight (TOF) are presented. The observed discrepancy between transient and steady-state majority carriers µτ-products is discussed within the framework of a dangling bond recombination model. Furthermore, results on the variation of µτ with doping and light-soaking are reported and ratio of capture cross-sections of charged to neutral defects are deduced.

Investigation of a-Si:H p-i-n Solar Cell Degradation

1996 ◽  
Vol 420 ◽  
Author(s):  
Franc Smole ◽  
Aleč Groznik ◽  
Marko Topič ◽  
Pavle Popović ◽  
Jože Furlan
Keyword(s):  
Cross Sections ◽  
Collection Efficiency ◽  
Forward Bias ◽  
Capture Cross ◽  
Front Part ◽  
Dangling Bond ◽  
Defect States ◽  
Voltage Dependent ◽  
Numerical Simulator ◽  
Capture Cross Sections

AbstractBased on measured characteristics of degraded p-i-n structures, simulations of degraded structures were performed using our numerical simulator ASPIN in order to fit and explain pronounced hump-shaped voltage-dependent internal collection efficiency (ICE) characteristics under weak short-wavelength illumination. Agreement with measured hump-shaped ICE characteristics was obtained only if in addition to the introduction of light-induced dangling bond defect states, their capture cross-sections were also increased, in particular capture crosssection for the charged defect states. This causes a change in occupancy of defect states at the p-i interface and front part of the i-layer under forward bias. Consequently, it increases the electric field in the front part of the cell, which results in recovery of the ICE.

scholarly journals Measurements of the capture cross sections of natural silver in the resonance range with the time of flight technique

2017 ◽  
Vol 146 ◽  
pp. 11052
Author(s):  
L. Šalamon ◽  
B. Geslot ◽  
J. Heyse ◽  
S. Kopecky ◽  
P. Leconte ◽  
...  
Keyword(s):  
Cross Sections ◽  
Time Of Flight ◽  
Capture Cross ◽  
Capture Cross Sections

Thermal Quenching and Photo-Enhancement of μτ Products in a-Si:H - The Role of Dangling Bonds and Band Tails

1994 ◽  
Vol 336 ◽  
Author(s):  
E. Morgado
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Capture Cross Section ◽  
Thermal Quenching ◽  
Capture Cross ◽  
Dangling Bond ◽  
Temperature Dependences ◽  
Capture Cross Sections ◽  
Band Tails

ABSTRACTResults from numerical calculations with a recombination model involving one class of correlated dangling-bond states and exponential band tails, in a-Si:H, are reported. Fermi level, light intensity and temperature dependences of the μτ products are studied. The results are consistent with experimental data. It is found that photo-enhancement of (μτ)e, or superlinear photoconductivity, as well as thermal quenching, are associated with a capture cross section of the band tails smaller than the capture cross sections of the dangling-bond states.

THERMAL NEUTRON CAPTURE CROSS-SECTION OF Na23 AND Mn55

1953 ◽  
Vol 31 (3) ◽  
pp. 204-206 ◽  
Author(s):  
Rosalie M. Bartholomew ◽  
R. C. Hawkings ◽  
W. F. Merritt ◽  
L. Yaffe
Keyword(s):  
Thermal Neutron ◽  
Cross Section ◽  
Cross Sections ◽  
Neutron Capture ◽  
Half Life ◽  
Capture Cross Section ◽  
Thermal Neutron Capture ◽  
Capture Cross ◽  
Neutron Capture Cross Section ◽  
Capture Cross Sections

The thermal neutron capture cross sections of Na23 and Mn55 have been determined using the activation method. The values are 0.53 ± 0.03 and 12.7 ± 0.3 barns respectively with respect to σAul97 = 93 barns. These agree well with recent pile oscillator results. The half-life for Mn56 is found to be 2.576 ± 0.002 hr.

Capture Cross Sections for Negative Ions in Rotating Helium II

1965 ◽  
Vol 14 (15) ◽  
pp. 585-587 ◽  
Author(s):  
B. E. Springett ◽  
D. J. Tanner ◽  
R. J. Donnelly
Keyword(s):  
Cross Sections ◽  
Negative Ions ◽  
Capture Cross ◽  
Helium Ii ◽  
Capture Cross Sections
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