Determination of Drift, Extended State Mobility and Recombination Lifetime in Compensated a-Si:H by Photomixing
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Mobilities of a series of compensated a-Si:H samples, measured earlier by the time-of-flight technique [1], were determined by the technique of photomixing. We have found that both the extended state and the drift mobilities decrease as the compensation increases. Modelling these transport processes in the context of the photomixing technique, it is shown that long-range potential fluctuations can account for the decrease in the extended state mobility in compensated samples.
1988 ◽
Vol 49
(11)
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pp. 1933-1950
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1996 ◽
Vol 77
(5)
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pp. 846-848
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2004 ◽
Vol 98
(6)
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pp. 1222-1230
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2002 ◽
Vol 299-302
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pp. 305-309
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2000 ◽
Vol 266-269
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pp. 884-888
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