Effect of Hydrogen on Dislocation Emission from a Crack Tip in Nickel

1992 ◽  
Vol 291 ◽  
Author(s):  
Richard G. Hoagland

ABSTRACTA method for determining the intrinsic resistance to dislocation emission and glide in atomic models is presented and applied to EAM models of nickel containing a single-ended crack tip. The method is an adaptation of the Peierls approach in which the work done on the glide plane is computed as a function of dislocation position and its derivative is the intrinsic resistance to dislocation motion. The results indicate that there are two parts to the resistance dislocation glide from the crack tip: a distinct barrier to injection of the dislocation from the crack tip and a periodic resistance associated with the lattice. When a hydrogen interstitial is placed on the slip plane near the crack tip the barrier height is reduced but its width is increased.

1994 ◽  
Vol 9 (7) ◽  
pp. 1805-1819 ◽  
Author(s):  
Richard G. Hoagland

A method that determines the work done in shearing atom pairs straddling the slip plane, Φ, during emission of dislocations from a crack tip in an atomic model is presented. The model is based on an EAM-type potential for nickel. The dislocations are emitted as partials, and the disregistry, Δ, across the slip plane is found to be fit accurately by a simple arctan function of position for each partial. The width of the partials is also found to remain essentially constant as they are emitted and move away from the crack tip. Rice's unstable stacking energy is extracted from the Φ - Δ curves for the atom pairs along the slip plane and is observed to vary somewhat, particularly near the crack tip. In addition to the Φ (Δ) at points on the slip plane, the total work done on the entire slip plane is determined as a function of the dislocation position in the spirit of the Peierls approach. The derivative of this total work with respect to dislocation position leads to the lattice resistance, ŝr. The first partial dislocation to be emitted experiences a maximum in ŝr at about 0.2 nm from the crack tip, and several contributions to the overall resistance can be identified including the creation of a new surface at the tip as emission occurs, the creation of stacking fault as the dislocation glides away from the tip, and a small but discernible periodic component with a period related to the lattice. A string of hydrogen interstitials is introduced at various locations in the lattice and its effect on Δ, Φ - Δ curves along the slip plane, and the lattice resistance is examined. A substantial effect on the unstable stacking energy results as the dislocation passes an interstitial on the slip plane, but the effect of an interstitial on the resistance to dislocation emission expressed in terms of the maximum ŝr is small and then only if it is confined to a region very near the crack tip. The significance of these results is discussed together with some additional observations including dislocation pinning on the interstitials.


1994 ◽  
Vol 364 ◽  
Author(s):  
M. Ludwig ◽  
P. Gumbsch

AbstractThe atomistic processes during fracture of NiAl are studied using a new embedded atom (EAM) potential to describe the region near the crack tip. To provide the atomistically modeled crack tip region with realistic boundary conditions, a coupled finite element - atomistic (FEAt) technique [1] is employed. In agreement with experimental observations, perfectly brittle cleavage is observed for the (110) crack plane. In contrast, cracks on the (100) plane either follow a zig-zag path on (110) planes, or emit dislocations. Dislocation generation is studied in more detail under mixed mode I/II loading conditions.


2002 ◽  
Vol 17 (7) ◽  
pp. 1863-1870 ◽  
Author(s):  
Richard P. Vinci ◽  
Stefanie A. Forrest ◽  
John C. Bravman

Wafer curvature was used to study the thermal–mechanical behavior of 1-μm Cu thin films capped with a 100-nm-thick Si3N4 layer. These films were grown with either a Ta or a Si3N4 underlayer. Films on Si3N4 that were exposed to oxygen at the film/capping layer interface or at the center of the copper layer exhibited Bauschinger-like yielding at low stress. Stacks deposited under continuous vacuum, with a Ta underlayer, with carbon exposure at the upper surface of the copper film, or with oxygen exposure of only the underlayer did not demonstrate the anomalous yielding. Preferential diffusion of oxygen into copper grain boundaries or interfaces is the likely cause of the early yield behavior. Possible mechanisms include an increase in interface adhesion due to the presence of oxygen in solution and diffusion-induced dislocation glide as an additional driving force for dislocation motion at low applied stress.


1992 ◽  
Vol 40 (11) ◽  
pp. 2883-2894 ◽  
Author(s):  
P.G. Marsh ◽  
W. Zielinski ◽  
H. Huang ◽  
W.W. Gerberich

Materia Japan ◽  
2005 ◽  
Vol 44 (12) ◽  
pp. 998-998
Author(s):  
Takeo Sasaki ◽  
Satoshi Tanaka ◽  
Takahisa Yamamoto ◽  
Katsuyuki Matsunaga ◽  
Yuichi Ikuhara

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