Excimer Laser-Induced Deposition of InP and Indium-Oxide Films

1983 ◽  
Vol 29 ◽  
Author(s):  
V. M. Donnelly ◽  
M. Geva ◽  
J. Long ◽  
R. F. Karlicek
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Normal Incidence ◽  
Organic Chemical ◽  
Organic Precursor ◽  
Composition Control ◽  
Metal Organic ◽  
Carbon Inclusion

ABSTRACTInP and In-oxide films have been deposited on quartz, GaAs, and InP substrates by excimer laser-induced photodecomposition of (CH3)3InP(CH3)3 and P(CH3)3 vapors at 193 nm. The oxide film refractive index and stoichiometry are close to In2O3. Phosphorus incorporation in the films was greatly enhanced by focusing the laser beam to promote multiple-photon dissociation processes. These conditions also lead to enhanced carbon inclusion in the films, due to formation of species such as CH and CH2 in the gas phase. However, this carbon inclusion could be suppressed by focusing the beam onto the surface at normal incidence. In the irradiated zone InP could be deposited with P(CH3)3-to-(CH3)3InP(CH3)3 ratios of only ∼1:1. The technique offers several potential advantages over conventional metal-organic chemical vapor deposition (MOCVD), including lower temperature, enhanced rates, safer gases, and threedimensional film composition control.Strong atomic In emission is observed in the gas-phase above the depositing film, due to a multiple photon dissociation process. Gasphase fluorescence from P, CH, and C was also observed. These emissions give insight into the photodecomposition mechanism and also serve as a monitor of metal-organic precursor concentrations.

ChemInform Abstract: Metal-Organic Chemical Vapor Deposition of La2CuO4+x Thin Films with Gas Phase Composition Control.

ChemInform ◽  
2010 ◽  
Vol 30 (51) ◽  
pp. no-no
Author(s):  
William J. DeSisto ◽  
Edward J. Cukauskas ◽  
Brian J. Rappoli ◽  
James C. Culbertson ◽  
John H. Claassen
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Composition Control ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Phase Composition Control

Expedient route to volatile zirconium metal-organic chemical vapor deposition precursors using amide synthons and implementation in yttria-stabilized zirconia film growth

1999 ◽  
Vol 14 (1) ◽  
pp. 12-15 ◽  
Author(s):  
John A. Belot ◽  
Richard J. McNeely ◽  
Anchuan Wang ◽  
Charles J. Reedy ◽  
Tobin J. Marks ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Yttria Stabilized Zirconia ◽  
Organic Chemical ◽  
Major Advance ◽  
Stabilized Zirconia ◽  
Organic Precursor ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

This communication reports rapid, efficient syntheses of the zirconium-organic metal-organic chemical vapor deposition (MOCVD) precursors Zr(acac)4 and Zr(dpm)4 (acac = acetylacetonate; dpm = dipivaloylmethanate) as well as a new, highly volatile, air- and moisture-stable Zr precursor based on a tetradentate Schiff-base ligand, Zr(tfacen)2 (tfacen = bis-trifluoroacetylacetone-ethylenediiminate). The improved one-step synthetic routes employ tetrakis(dimethylamido)zirconium as a common intermediate and represent a major advance over previous methods employing ZrCl4 or diketonate metathesis. Furthermore, Zr(tfacen)2 is shown to be an effective metal-organic precursor for the MOCVD-mediated growth of (100) oriented yttria-stabilized zirconia thin films.

Simulation and Suppression of the Gas Phase Pre-reaction in Metal-Organic Chemical Vapor Deposition of ZnO

2011 ◽  
Vol 28 (11) ◽  
pp. 116803 ◽  
Author(s):  
Guang-Yao Zhu ◽  
Shu-Lin Gu ◽  
Shun-Ming Zhu ◽  
Kun Tang ◽  
Jian-Dong Ye ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Deposition of Ceramic Films by A Novel Pulsed-Gas Mocvd Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Kenneth A. Aitchison ◽  
James D. Barrie ◽  
Joseph Ciofalo
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Flow Reactor ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Oxide Systems ◽  
Metal Organic ◽  
Mocvd Technique

ABSTRACTMetal-Organic Chemical Vapor Deposition (MOCVD) is a versatile technique for the deposition of thin films of metals, semiconductors and ceramics. Commonly used hot wall flow-reactor designs suffer from a number of limitations. Chemical processes occurring in these reactors typically include a combination of homogeneous (gas-phase) and heterogeneous (gas-surface) reactions. These complex conditions are difficult to model and are poorly understood. In addition, flow reactors use large quantities of expensive precursor materials and are not well suited to the formation of abrupt interfaces. We report here a novel MOCVD technique which addresses these problems and enables a more thorough mechanistic understanding of the heterogeneous decomposition pathways of metal-organic compounds. This technique, the low-pressure pulsed gas method, has been demonstrated to provide high deposition rates with excellent control over film thickness. The deposition conditions effectively eliminate homogeneous processes allowing surface-mediated reactions to dominate. This decoupling of gas-phase chemistry from film deposition allows a better understanding of reaction mechanisms and provides better control over film growth. Both single metal oxides and binary oxide systems have been investigated on a variety of substrate materials. Effects of precursor chemistry, substrate surface, temperature and pressure on film composition and morphology will be discussed.

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