Pyrolytic Laser Activation Of Cds Thin Film Photoconductors

1983 ◽  
Vol 29 ◽  
Author(s):  
A. H. Kitai ◽  
G. J. Wolga
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Small Area ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Argon Ion Laser ◽  
Cds Thin Film ◽  
Low Temperature Processing ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTCdS and CdS:Ag thin films, deposited at room temperature, were irradiated using an argon-ion laser, causing them to become photoconductive in the path of the laser beam. Physical deformation of the thin films is reported, and the optical and electrical properties of the photoconductive devices thus fabricated are described. We suggest this as a means to fabricate small area, patterned photoconductors with the benefit of maskless, low temperature processing.

CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films

2004 ◽  
Vol 808 ◽  
Author(s):  
Sampath K. Paduru ◽  
Husam H. Abu-safe ◽  
Hameed A. Naseem ◽  
Adnan Al-Shariah ◽  
William D. Brown
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Threshold Power ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Power Densities ◽  
Argon Ion ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

ABSTRACTCW Argon-ion laser initiated aluminum induced crystallization (AIC) of RF magnetron sputtered amorphous silicon (a-Si) thin films has been investigated. It was found that lasers could be effectively used to initiate AIC process at very low threshold power densities. An argon-ion laser (λ=514.5 nm) was used to anneal Al/a-Si/glass structures with varying power densities ranging between 55 and 125 W/cm2 and exposure times ranging from 10 to 120 s. X-ray diffraction analysis showed the resulting films to be polycrystalline. The crystallization rate increased both with power density and exposure time. Environmental scanning electron microscopy (ESEM) analysis showed that the surface features change with increasing power density and irradiation time. A dendritic growth pattern was observed in the initial stages of interaction between the films. A strong crystalline Raman peak at around 520 cm-1 was observed in the Raman spectra of the crystallized samples.

LASER-INDUCED PROCESS OF BINARY ALLOYING OF Ge–Se

1999 ◽  
Vol 06 (02) ◽  
pp. 219-223
Author(s):  
S. K. BHADRA ◽  
T. BANDYOPADHYAY ◽  
A. K. MAITI ◽  
K. GOSWAMI
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Composite Film ◽  
Laser Irradiation ◽  
Laser Fluence ◽  
Optical Absorption Spectra ◽  
Compound Formation ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Thin films of chalcogenides are synthesized by CW argon ion laser irradiation of separate Ge/Se and Se/Te film sandwiches according to near stoichiometric proportions. The compound formation and crystalline transition of amorphous Se film are characterized by observing photomicrographs and optical absorption spectra. The composite film of bilayer Ge/Se does not form compounds but deposits as separate elements under equivalent laser fluence.

scholarly journals Preparation of polymer thin film using as NH3 gas Sensor

2014 ◽  
Vol 11 (2) ◽  
pp. 598-604
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Gas Sensor ◽  
Organic Semiconductor ◽  
Glass Substrate ◽  
Room Temperature ◽  
Oxidative Polymerization ◽  
Optical And Electrical Properties ◽  
Polymer Thin Film

Polyaniline organic Semiconductor polymer thin films have been prepared by oxidative polymerization at room temperature, this polymer was deposited on glass substrate with thickness 900nm, FTIR spectra was tested , the structural,optical and electrical properties were studied through XRD ,UV-Vis ,IR measurements ,the results was appeared that polymer thin film sensing to NH3 gas.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

Sign in / Sign up

Export Citation Format

Share Document