Structural Analysis of Carbon Thin Films Deposited by Pulsed Laser Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
M.A. Capano ◽  
F. Qian ◽  
R.K. Singh ◽  
N.T. Mcdevitt
Keyword(s):  
Raman Spectroscopy ◽  
Bond Angle ◽  
Pulsed Laser ◽  
Domain Size ◽  
Carbon Films ◽  
Maximum Density ◽  
Laser Deposition ◽  
Density Measurements ◽  
X Ray ◽  
Si Substrates

ABSTRACTThe objective of the current study is to gain a greater understanding of the atomic structure of carbon films deposited by UV-pulsed-laser ablation. Films deposited onto Si substrates at 293 K, 473 K, 673 K, and 873 K are characterized using X-ray reflectometry and Raman spectroscopy. Film densities are shown to initially decrease from a maximum density of 2.39 g/cm3 as temperature increases. Above 673 K the density remains constant. When compared with Raman spectroscopy data, the reflectometry data are shown to be sensitive to microstructural changes within the films. The possibility of using density measurements as a boundary condition for more quantitative analysis is discussed. Also, Raman spectroscopy indicates that the graphitic domain size initially decreases, passes through a minimum, and then increases as temperature increases. The amount of bond-angle disorder is shown to decrease with increasing substrate temperature. However, an upward shift in frequency of the Raman D peak is not observed with the presumed decrease in sp3 bonding as the deposition temperature increases. These and other experimental results are presented and discussed.

scholarly journals Каскадные солнечные элементы на основе наногетероструктур GaP/Si/Ge

2019 ◽  
Vol 45 (6) ◽  
pp. 7
Author(s):  
Л.С. Лунин ◽  
М.Л. Лунина ◽  
А.С. Пащенко ◽  
Д.Л. Алфимова ◽  
Д.А. Арустамян ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Energy Band ◽  
External Quantum Efficiency ◽  
Pulsed Laser ◽  
Energy Band Diagram ◽  
Laser Deposition ◽  
Band Diagram ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

AbstractGaP/Si/Ge nanoheterostructures have been obtained using the method of pulsed laser deposition, and an energy band diagram of cascade solar cells based on these heterostructures were modeled. GaP and Ge nanolayers grown on Si substrates were studied by Raman spectroscopy and X-ray diffraction. Spectral dependences of the external quantum efficiency response of GaP/Si/Ge nanoheterostructures were determined.

Pulsed laser deposition of thin carbon films on SiO2/Si substrates

2019 ◽  
Vol 480 ◽  
pp. 323-329 ◽  
Author(s):  
Teodor Milenov ◽  
Anna Dikovska ◽  
Georgi Avdeev ◽  
Ivalina Avramova ◽  
Kiril Kirilov ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Si Substrates ◽  
Thin Carbon

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

1992 ◽  
Vol 242 ◽  
Author(s):  
G. L. Doll ◽  
T. A. Perry ◽  
J. A. Sell ◽  
C. A. TAYLORS ◽  
R. Clarke
Keyword(s):  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Critical Value ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Present Evidence ◽  
X Ray ◽  
Si Substrates

ABSTRACTNew x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

Pulsed Laser Deposition of Epitaxial SrVO3 Films on (100)LaAlO3 and (100)Si

2000 ◽  
Vol 623 ◽  
Author(s):  
P.W. Yip ◽  
K.H. Wong
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Spectroscopic Studies ◽  
Laser Deposition ◽  
X Ray ◽  
Si Substrates ◽  
Post Annealing ◽  
Ambient Oxygen ◽  
Relationship Of

AbstractThin films of SrVO3 have been grown on (100)LaAlO3 and TiN buffered (100)Si substrates by pulsed laser deposition. The films were deposited in temperature range of 450°C – 750°C and under ambient oxygen pressure between 101−6 and 101−2 Torr. Their structural properties were characterized using a four-circle x-ray diffractometer. High quality SrVO3 films were obtained at growth temperatures above 500°C without post annealing. Heteroepitaxial relationship of < 100 >SrVo3 ∥ < 100 >LaAOl3 and <100>SrVo3∥ < 100 >TiN ∥ < 100 >Si were observed for films deposited at ≤ 550°C. X-ray photoelectron spectroscopic studies of the films suggest that the vanadium is mainly tetravalent and pentavalent. Charge transport measurements show that the films vary from semiconducting to highly conducting for different growth conditions. Resistivity of a few micro-ohm cm was recorded for some of the epitaxial SrVO3 films.

LiCoO2 Thin Films Grown by Pulsed Laser Deposition on Low Cost Substrates

1997 ◽  
Vol 496 ◽  
Author(s):  
D. S. Ginley ◽  
J. D. Perkins ◽  
J. M. McGraw ◽  
P. A. Parilla ◽  
M.L. Fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Stainless Steel ◽  
Low Cost ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Similar Texture ◽  
Dense Films

AbstractWe report on the use of pulsed laser depositon (PLD) to grow thin films of LiCoO2 on a number of low cost substrates including SnO2 coated Upilex, stainless steel and SnO2 coated glass. Highly textured (001) films grown on CVD deposited SnO2 films on 7059 glass, were obtained at 200 to 500 mTorr O2 and a temperature of 500 C. Similar texture was not obtained on the stainless or Upilex however dense films from crystalline to amorphous were obtained. The films were characterized by x-ray diffraction and Raman spectroscopy.

Study of Nanostructure Inclusion Effects on the Thermoelectric Behavior of Ca3Co4O9 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 1267 ◽  
Author(s):  
Evan Lyle Thomas ◽  
Xueyan Song ◽  
Yonggao Yan ◽  
Joshua Martin ◽  
Winnie Wong-Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Factor Α ◽  
Scanning Electron

AbstractThe influence of incorporating nanoparticulate additions into Ca3Co4O9 (CCO) thin films prepared by pulsed laser deposition using composite targets of CCO and CCO + 3wt% BaZrO3 (BZO) on Si and LaAlO3 substrates is investigated. X-ray data and high-resolution scanning electron microscopy reveal preferred c-axis orientation of the films deposited on Si substrates with the formation of nanoparticles between ∼ 10 – 50 nm. Preliminary thermoelectric behavior shows an enhancement of the power factor α2/ρ at room temperature. The microstructure and thermoelectric behavior of the CCO films are compared to the BZO-doped films.

scholarly journals A Comparative Analysis of Asymmetric (BaTiO3) 1−xΛ/(BaZrO3)xΛ Superlattices via X-Ray Diffraction and Raman Spectroscopy

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
O. A. Maslova ◽  
Yu. I. Yuzyuk ◽  
S. A. Barannikova
Keyword(s):  
Raman Spectroscopy ◽  
Comparative Analysis ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Lattice Dynamic ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Parameter Mismatch ◽  
X Ray ◽  
Out Of Plane

This work is aimed at studying asymmetric BaTiO31 − xΛ/BaZrO3xΛ ((BT) 1−xΛ/(BZ)xΛ) superlattices, grown by pulsed laser deposition onto (001) MgO substrates. The thicknesses of BT (ferroelectric) and BZ (paraelectric) layers were varied so that х ranged from 0 to 1 at a modulation period Λ of about 80 Å. The films were 400 nm thick. The out-of-plane lattice parameters of constituents were assessed using X-ray diffraction. The lattice dynamic peculiarities of superlattices were probed via Raman spectroscopy; special attention is paid to the analysis of E(1TO) and A1(2TO) ferroelectric soft modes. A comparative analysis of data acquired via both experimental techniques reveals the enhancement of stress between BT and BZ layers with a decrease in symmetry from the tetragonal to a monoclinic phase due to strains induced by the lattice parameter mismatch between the constituents.

Structural and dielectric proper ties of CaCu3Ti4O12 thin film. deposited using laser ablation.

2003 ◽  
Vol 785 ◽  
Author(s):  
V. Gupta ◽  
R.R. Das ◽  
A. Dixit ◽  
P. Bhattacharya ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Vibrational Modes ◽  
X Ray Diffraction ◽  
Metal Insulator ◽  
X Ray ◽  
Si Substrates ◽  
Micro Raman Spectroscopy

ABSTRACTCaCu3Ti4O12 (CCT) thin films were deposited on Pt/TiO2/SiO2/Si substrates using pulsed laser deposition technique. During the thin films deposition, the substrate temperature was varied in the range of 700–800 °C with a constant O2 pressure of 200 mTorr. X-ray diffraction showed the polycrystalline nature of the films. The dielectric properties of the films were studied in metal insulator configuration. Films grown at higher substrate temperature exhibited highest value of dielectric permittivity (∼2200). Micro Raman spectroscopy was used to study the vibrational modes of the CCT thin films in comparison with the bulk ceramics.

Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Okamoto ◽  
T. Ogawa ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
X Ray ◽  
Si Substrates ◽  
High Laser ◽  
High Laser Energy

ABSTRACTThe smooth and highly oriented AlN films were obtained using pulsed laser deposition from sintered AlN target in a nitrogen ambient. The XRD investigation revealed that highly oriented AlN thin films along the c-axis (AlN (0002)) normal to the substrate were obtained both on Si(111) and on Si(100) substrates. The (0002) x-ray peak width became narrower with increasing substrate temperature. The CL investigation showed that AlN films at high laser energy density (Ed) indicated CL peak at shorter wavelength (306nm) than that at low Ed (394nm). N/Al atomic ratio in AlN films grown at high Ed also increased as comparison with the films grown at low Ed.

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