Epitaxial ZnS, ZnSe and ZnS-ZnSe Superlattices Grown on (001)GaAs By Pulsed-Laser Ablation

1992 ◽  
Vol 285 ◽  
Author(s):  
J. W. McCamy ◽  
Douglas H. Lowndes ◽  
J. D. Budai ◽  
G. E. Jellison ◽  
I. P. Hermant ◽  
...  

ABSTRACTPulsed KrF (248nm) laser ablation of polycrystalline ZnS and ZnSe targets has been used to grow high quality, fully epitaxial ZnS and ZnSe thin films on (001) GaAs. Photoluminescence measurements of the ZnS thin films show strong edge emission, while ZnSe thin films show free excitonic as well as donor and acceptor peaks. By alternately ablating each target, strained layer superlattices of the form (ZnSe)m–(ZnS)n were grown with as many as 65 periods of compositional modulation. A ZnSxSe1–x structure also was fabricated which simultaneously incorporated both continuously graded and abrupt compositional changes.

Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


2001 ◽  
Vol 177 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
K.T Hillie ◽  
C Curren ◽  
H.C Swart

Ionics ◽  
2007 ◽  
Vol 13 (5) ◽  
pp. 343-348 ◽  
Author(s):  
P. Kuppusami ◽  
K. Muthukkumaran ◽  
R. Divakar ◽  
R. Kesavamoorthy ◽  
E. Mohandas ◽  
...  

2010 ◽  
Vol 31 (4) ◽  
pp. 1746-1748
Author(s):  
Ren-Guo Song ◽  
Fang-Er Yang ◽  
Xiao-Hong Weng ◽  
Wang-Zhao He

2012 ◽  
Vol 40 (11) ◽  
pp. 2850-2852 ◽  
Author(s):  
Zihao Ouyang ◽  
Tae-Seung Cho ◽  
David N. Ruzic

ChemInform ◽  
2010 ◽  
Vol 26 (18) ◽  
pp. no-no
Author(s):  
R. E. TREECE ◽  
J. S. HORWITZ ◽  
D. B. CHRISEY ◽  
E. P. DONOVAN ◽  
S. B. QADRI

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