Structural and Electro-Optic Properties of Laser-Ablated Ferroelectric Bi4Ti3O12 Thin Films

1992 ◽  
Vol 285 ◽  
Author(s):  
William Jo ◽  
Hag-Ju Cho ◽  
Tae Won Noh ◽  
Yun Seok Cho ◽  
Suk-Il Kwun
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pole Figure ◽  
Nd:Yag Laser ◽  
Growth Parameters ◽  
Linear Birefringence ◽  
Axis Orientation ◽  
Crystal Axis ◽  
X Ray ◽  
Electro Optic

ABSTRACTFerroelectric Bi4Ti3O12 thin films have been deposited using second harmonics of a Q-switched Nd:YAG laser. Various single crystal substrates, including SrTiO3(100), SrTiO3(110). MgO(100), and MgO(110), were used. Structural and electro-optic properties of the films were investigated using XRD, x-ray pole figure, and linear birefringence measurements. It is found that substrate kinds and their surface orientations are important growth parameters which determine crystal axis orientation and electro-optic properties of the Bi4Ti3O12 thin films.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Pulsed Laser Deposition of Epitaxial LiNbO3 Films on Sapphire Substrates Using a Single Crystal Targets

1994 ◽  
Vol 361 ◽  
Author(s):  
See-Hyung Lee ◽  
Tae W. Noh ◽  
Jai-Hyung Lee ◽  
Young-Gi Kim
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pole Figure ◽  
Oxygen Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Sapphire Substrates ◽  
Crystallographic Orientations

ABSTRACTPulsed laser deposition was used to grow epitaxial LiNbO3 films on sapphire(0001) substrates with a single crystal LiNbO3 target. Using deposition temperatures below 450 °C, LiNbO3 films with correct stoichiometry could be grown without using Li-rich targets. Rutherford backscattering spectrometry measurements showed that the oxygen to niobium ratio is 3.00 ± 0.15 to 1.00. It was also found that the crystallographic orientations of the LiNbO3 films could be controlled by adjusting the oxygen pressure during deposition. An x-ray pole figure shows that epitaxial LiNbO3 films were grown on sapphire(0001), but with twin boundaries.

scholarly journals Single-Crystal-like Structure of Poly(9,9-dioctylfluorene) Thin Films Evaluated by Synchrotron-Sourced Grazing-Incidence X-ray Diffraction

2007 ◽  
Vol 39 (12) ◽  
pp. 1306-1311 ◽  
Author(s):  
Masahiro Misaki ◽  
Shuichi Nagamatsu ◽  
Masayuki Chikamatsu ◽  
Yuji Yoshida ◽  
Reiko Azumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

Initial Studies on The Heteroepitaxial Growth of Thin Films of (AI/In)N on Ain-Seeded (00.1) Sapphire by Single-Target Reactive Magnetron Sputtering

1992 ◽  
Vol 263 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Growth Parameters ◽  
Heteroepitaxial Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Single Target ◽  
A Cell

ABSTRACTThin films of (AI/In)N alloys have been deposited on AIN-nucleated (00.1) sapphire by reactive (pure N2 gas) magnetron sputtering and characterized by X-ray scattering, stylus profilometry, optical spectroscopy, and electrical transport measurements. Initial efforts have concentrated on producing films with compositions near Al0.31In0.69N (bandgap tailored to GaN). The alloy sputtering targets were disks fabricated by cold pressing appropriate molar mixtures of beads of 99.99% purity Al and In. The resulting thin films are composed of heteroepitaxial grains {(00.1)InNll(00.1)sapphire; (10.0)InNll(11.0)Sapphire} and their chemical composition has been deduced from the variation in the a cell constant (as measured by the X-ray precession method) to yield equilibrium film compositions near Al0.04In0.96N and Al0.25In0.75N, respectively. Preliminary results are presented on the dependence of the quality of heteroepitaxial growth and electrical and optical properties of. these AlxIn1−xN alloy films on various growth parameters: such as chemical composition; film thickness; morphology; and substrate temperature.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Epitaxial growth of magnesia and spinel on sapphire during incongruent reduction in molten magnesium

1999 ◽  
Vol 14 (8) ◽  
pp. 3312-3318 ◽  
Author(s):  
P. Kumar ◽  
S. A. Dregia ◽  
K. H. Sandhage
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Pole Figure ◽  
Epitaxial Layer ◽  
Orientation Relationships ◽  
X Ray ◽  
Oxide Phases ◽  
Sapphire Single Crystal ◽  
Molten Magnesium

The types and structures of oxide phases produced during the incongruent reduction of sapphire (single-crystal Al2O3) by molten magnesium were examined. Polished faces of sapphire were exposed to molten magnesium at 1000 °C for 100 h. Such exposure resulted in the formation of a continuous, epitaxial layer of spinel (MgAl2O4) on sapphire and a continuous, epitaxial layer of magnesia (MgO) on the spinel. X-ray pole figure analyses indicated that two variants of spinel and magnesia had formed in a manner consistent with the following orientation relationships:

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