Laser Induced Damage Threshold Measurements at the Microscopic Level

1992 ◽  
Vol 285 ◽  
Author(s):  
Allen D. Zwan ◽  
David R. Miller

ABSTRACTWe have (tudied the laser damage threshold to silver films (500Å - 1000Å) grown on single crystal silicon <100>, in a newly developed laser damage UHV system at pressures of 10−1 torr. A 1.06μm Nd:Glass laser is used to damage the mirror surfaces in 1-on-1 pulse studies. In-situ damage characterization includes Auger, reflectivity of the primary beam, diffuse scattering of a helium-neon laser, and mass spectrometry detection of desorbed surface species. External characterization includes optical microscopy and SEM. All in-situ damage probes are well correlated and baseline damage occurs at fluences near 3.4 MW/cm2. Time-of-flight to the mass spectrometer shows ejected particles with energies in the 5 to 10 eV range indicating a plasma damage mechanism. Prior to typical thermally induced damage the external microscopy shows well defined precursor morphology changes which appear as feather-like microstructure at the submicron level.

1996 ◽  
Vol 24 (8) ◽  
pp. 906-909
Author(s):  
Akio MIYAMOTO ◽  
Hidetsugu YOSHIDA ◽  
Yusuke MORI ◽  
Takatomo SASAKI ◽  
Sadao NAKAI

2020 ◽  
Vol 8 ◽  
Author(s):  
Dahui Wang ◽  
Yinren Shou ◽  
Pengjie Wang ◽  
Jianbo Liu ◽  
Zhusong Mei ◽  
...  

Abstract Single-shot laser-induced damage threshold (LIDT) measurements of multi-type free-standing ultrathin foils were performed in a vacuum environment for 800 nm laser pulses with durations τ ranging from 50 fs to 200 ps. The results show that the laser damage threshold fluences (DTFs) of the ultrathin foils are significantly lower than those of corresponding bulk materials. Wide band gap dielectric targets such as SiN and formvar have larger DTFs than semiconductive and conductive targets by 1–3 orders of magnitude depending on the pulse duration. The damage mechanisms for different types of targets are studied. Based on the measurement, the constrain of the LIDTs on the laser contrast is discussed.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Bo Fu ◽  
Gaohang He ◽  
Wenxiang Mu ◽  
Yang Li ◽  
Boyuan Feng ◽  
...  

We designed an original and effective method to study the laser damage mechanism of β-Ga2O3 single crystal grown by edge-defined film-fed growth (EFG). The structure destruction under high light field...


2013 ◽  
Vol 52 (8) ◽  
pp. 1682 ◽  
Author(s):  
Heather P. Howard ◽  
Anthony F. Aiello ◽  
Justin G. Dressler ◽  
Nicholas R. Edwards ◽  
Terrance J. Kessler ◽  
...  

2010 ◽  
Vol 257 (5) ◽  
pp. 1678-1683 ◽  
Author(s):  
A.M. Chen ◽  
H.F. Xu ◽  
Y.F. Jiang ◽  
L.Z. Sui ◽  
D.J. Ding ◽  
...  

Author(s):  
Zoltán Balogh-Michels ◽  
Igor Stevanovic ◽  
Aurelio Borzi ◽  
Andreas Bächli ◽  
Daniel Schachtler ◽  
...  

AbstractIn this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.


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