Pump-Probe Charge Integrating Investigation of Trap Emission Kinetics in Ultrathin Mos Capacitors

1992 ◽  
Vol 284 ◽  
Author(s):  
J. C. Poler ◽  
E. A. Irene
Keyword(s):  
Gate Dielectrics ◽  
Emission Cross Section ◽  
Significant Proportion ◽  
Initial Time ◽  
Interfacial Region ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Pump Probe ◽  
Time Regime ◽  
Short Time

ABSTRACTAs design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structures are required to be scaled to even thinner proportions. Upon scaling the gate oxides below ∼60Å the interfacial region becomes a significant proportion of the total film. Thus interface properties are weighted more heavily in determining device performance and reliability.We have developed a Pump-Probe charge integrating measurement technique for studying the emission kinetics of traps in the M/SiO2/Si system. Essentially, a MOS capacitor is pumped by exposure to a charging pulse. The emission of the charge at short time scales (<10ms), can be measured using a delayed application of a probe pulse which determines the remainder of the filled traps as a function of delay time. For a lightly doped p-Si (lll) substrate, we observe an uncommon behavior of the emission kinetics in the initial time regime (< 100ms). A possible explanation for this phenomenon is the perturbation of the emission cross-section of the probed traps due to the presence of another state in communication with the trap site.

Microroughness at the Si/SiO2 Interface from Pre-Oxidation Annealing, Measured Using Quantum Oscillations in Fowler-Nordheim Tunneling Currents

1992 ◽  
Vol 280 ◽  
Author(s):  
J. C. Poler ◽  
K. K. McKay ◽  
E. A. Irene
Keyword(s):  
Gate Dielectrics ◽  
Interface Roughness ◽  
Quantum Oscillation ◽  
Interfacial Region ◽  
Mos Capacitors ◽  
Quantum Oscillations ◽  
High Temperature Anneal ◽  
Afm Imaging ◽  
Tunneling Currents ◽  
Nordheim Tunneling

ABSTRACTAs design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structures are required to be scaled to even thinner proportions. Upon scaling the gate oxides below ∼60Å some properties of the device, such as interface roughness, that are negligible for thicker films become critical and must be evaluated. Microroughness at the interface of ultrathin MOS capacitors has been shown to degrade these devices.We are studying the interfacial region of ∼50Å SiO2 on Si using the quantum oscillations in Fowler-Nordheim tunneling currents. The oscillations are sensitive to the electron potential and abruptness of the film and its interfaces. In particular, inelastic scattering and/or thickness inhomogeneities in the film will reduce the amplitude of the oscillations. We are using the amplitude of the oscillations to examine the degree of microroughness at the interface that results from a pre-oxidation high temperature anneal in an inert ambient containing various amounts of H2O. Preliminary AFM imaging has shown correlations supporting our microroughness interpretation of the quantum oscillation amplitudes.

scholarly journals Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric

2021 ◽  
Author(s):  
Wen-Shan Lin ◽  
Yue Kuo
Keyword(s):  
Dielectric Layer ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Optical Characteristics ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Warm White Light ◽  
The Difference

Abstract Solid-state incandescent light emitting devices made from MOS capacitors with the WOx embedded Zr-doped HfOx gate dielectric were characterized for electrical and optical characteristics. Devices made from capacitors containing Zr-doped HfOx and WOx, gate dielectrics were also fabricated for comparison. The device with the WOx embedded gate dielectric layer had electrical and light emitting characteristics between that with WOx gate dielectric layer and that with the Zr-doped HfOx but no WOx embedded gate dielectric layer. The difference can be explained by the nano-resistor formation process and the content of the high emissivity W in the nano-resistor. The device made from the WOx embedded Zr-doped HfOx gate dielectric MOS capacitor is applicable to areas where uniform emission of warm white light is required.

Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

2014 ◽  
Vol 778-780 ◽  
pp. 549-552 ◽  
Author(s):  
Jing Hua Xia ◽  
David M. Martin ◽  
Sethu Saveda Suvanam ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Deposition Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Layer Deposition ◽  
High K ◽  
Film Characteristics

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

THE COMPLETE TREATMENT OF THE TIME EVOLUTION IN THE CASE OF A DISCRETIZED ATOM-FIELD INTERACTION MODEL

2001 ◽  
Vol 15 (21) ◽  
pp. 883-894
Author(s):  
J. SEKE ◽  
A. V. SOLDATOV ◽  
N. N. BOGOLUBOV
Keyword(s):  
State Energy ◽  
Interaction Model ◽  
Time Interval ◽  
Short Time Interval ◽  
Field Interaction ◽  
Markovian Dynamics ◽  
Complete Treatment ◽  
Time Regime ◽  
Long Time ◽  
Short Time

The dynamics of a discretized atom-field interaction model with a physically relevant form factor is analyzed. It is shown that after some short time interval only a small fraction of eigenvalues and eigenstates (belonging to the close vicinity of the excited atomic state energy E = ω0/2) contributes to the nondecay probability amplitudes in the long-time regime, whereas the contribution of all other eigenstates and eigenvalues is negligible. Nevertheless, to describe correctly the non-Markovian dynamics in the short-time regime the contribution of all eigenstates and eigenvalues must be taken into account.

Short Time Dynamics of an Irreversible Probabilistic Cellular Automaton

1998 ◽  
Vol 12 (21) ◽  
pp. 873-879 ◽  
Author(s):  
T. Tomé ◽  
J. R. Drugowich de Fel Icio
Keyword(s):  
Ising Model ◽  
Cellular Automaton ◽  
Early Time ◽  
Universality Class ◽  
Kinetic Ising Model ◽  
Time Dynamics ◽  
Probabilistic Cellular Automaton ◽  
Time Regime ◽  
The One ◽  
Short Time

We study the short-time dynamics of a three-state probabilistic cellular automaton. This automaton, termed TD model, possess "up-down" symmetry similar to Ising models, and displays continuous kinetic phase transitions belonging to the Ising model universality class. We perform Monte Carlo simulations on the early time regime of the two-dimensional TD model at criticality and obtain the dynamic exponent θ associated to this regime, and the exponents β/ν and z. Our results indicate that, although the model do not possess microscopic reversibility, it presents short-time universality which is consistent with the one of the kinetic Ising model.

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