Prolonged Storage of Electrons in Monos-Structures

1992 ◽  
Vol 284 ◽  
Author(s):  
Vladimir M. Maslovsky ◽  
Ellen V. Simanovich
Keyword(s):  
Electric Fields ◽  
Correlation Energy ◽  
Charge Carriers ◽  
Prolonged Storage ◽  
Dispersive Transport ◽  
Positive Voltage ◽  
Monopolar Injection ◽  
High Electric Fields ◽  
The Mathematical Model ◽  
Positively Charged

ABSTRACTThe transient process of the accumulation of charge in the Silicon Nitride by applying a positive voltage pulse to MONOS structure is investigated with the help of the experimental and theoretical methods (monopolar injection of electrons). The mathematical model of charge carriers transport in an amorphous nitride thin films in MONOS structures at the high electric fields has been developed. The essential peculiarity of this modelis that the injected carriers from the contact are captured by a quasi - continuous spectrum of states that there are traps, having an exponential distribution of densityin the nitride band gap and by the monoenergetic positively charged deep centers. The positive traps are made by the negative correlation energy defects. These defects are formed by the weak quasi- hydrogenous bonds Si-H-Si the changes of ones in consequences of a migration of hydrogen stipulate for the degradation processes in the nitride. It is established that the quasi - distributed traps are answered for the prolonged relaxation of current in the external circuit when t≫Tg in which the exponent α of function J∼t-α is determined by the parameter of the energy distribution of traps and by the applied voltage on the structure that is in agreement with experimental results and corresponds to the dispersive transport of carriers.

Moleküldissoziation durch hohe elektrische Felder

1964 ◽  
Vol 19 (1) ◽  
pp. 71-83 ◽  
Author(s):  
H. D. Beckey
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Charge Ratio ◽  
Mass Spectrometers ◽  
Basic Model ◽  
Internal Interaction ◽  
High Electric Fields ◽  
Very High ◽  
Field Dissociation ◽  
Positively Charged

It has been shown by different experiments using field ion mass spectrometers that molecules may be dissociated by very high electric fields (several 107 - 108 V/cm) immediately after field ionization. The large variety of field dissociation processes observed in field ion mass spectrometers is treated systematically. This is done by assuming a basic model underlying the effect of field dissociation. The rules derived from the model are confirmed experimentally by the field ion mass spectra of homologous series of organic substances.After derivation of the model it is shown that field dissociation of organic ions is dependent on factors such as: Charge distribution in the molecule rearranged by the electric field, interaction of the positively charged parts of the molecule with the external electric field, internal interaction of the field dissociating parts of the molecule.Each of these main factors in turn is dependent on further factors which will be discussed, the most important ones being the mass to charge ratio and the electronic structure of both the field ionized molecule and the subsequently formed fragments.

scholarly journals On the injection and generation of charge carriers in mineral oil under high electric fields

2019 ◽  
Vol 3 (3) ◽  
pp. 035019 ◽  
Author(s):  
Mauricio Aljure ◽  
Marley Becerra ◽  
Mattias E Karlsson
Keyword(s):  
Electric Fields ◽  
Mineral Oil ◽  
Charge Carriers ◽  
High Electric Fields

Diffusion of charge carriers in high electric fields

1977 ◽  
Vol 354 (1678) ◽  
pp. 367-378 ◽  
Keyword(s):  
Distribution Function ◽  
Relaxation Time ◽  
Electric Fields ◽  
Carrier Density ◽  
Diffusion Constant ◽  
Charge Carriers ◽  
Hot Electron ◽  
High Electric Fields ◽  
Time Description ◽  
Diffusivity Ratio

The diffusion constant of electrons in high electric fields is studied by solving the Boltzmann equation and incorporating the effect of the carrier density gradient on the distribution function. The relaxation-time description of the scattering mechanisms and a constant isotropic effective mass for the carriers are assumed. For charge diffusion in gases, the method yields values of the longitudinal to transverse diffusivity ratio (D L /D T ) in excellent agreement with those obtained from other methods. The method has also been applied to study the hot-electron diffusion in semiconductors, namely, germanium and silicon. It is found that the quantity (D L /D T ) is less than unity and differs markedly from the values calculated on the basis of modified Einstein’s relations. Satisfactory agreement with recent experiments in the case of silicon has been obtained.

Atomic Spectroscopy in the FIM

1986 ◽  
Vol 44 ◽  
pp. 758-761
Author(s):  
J. J. Hren ◽  
S. D. Walck
Keyword(s):  
Electron Microscope ◽  
Electric Fields ◽  
Atom Probe ◽  
Atomic Spectroscopy ◽  
Single Atom ◽  
Statistical Sampling ◽  
Commercial Instrument ◽  
Available Technology ◽  
High Electric Fields ◽  
Field Ion Microscope

The field ion microscope (FIM) has had the ability to routinely image the surface atoms of metals since Mueller perfected it in 1956. Since 1967, the TOF Atom Probe has had single atom sensitivity in conjunction with the FIM. “Why then hasn't the FIM enjoyed the success of the electron microscope?” The answer is closely related to the evolution of FIM/Atom Probe techniques and the available technology. This paper will review this evolution from Mueller's early discoveries, to the development of a viable commercial instrument. It will touch upon some important contributions of individuals and groups, but will not attempt to be all inclusive. Variations in instrumentation that define the class of problems for which the FIM/AP is uniquely suited and those for which it is not will be described. The influence of high electric fields inherent to the technique on the specimens studied will also be discussed. The specimen geometry as it relates to preparation, statistical sampling and compatibility with the TEM will be examined.

High Field Electron Drift in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
Qing Gu ◽  
Eric A. Schiff ◽  
Jean Baptiste Chevrier ◽  
Bernard Equer
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Drift Mobility ◽  
Time Range ◽  
Electron Drift ◽  
Parameter Change ◽  
Transient Photocurrent ◽  
Field Mobility ◽  
High Electric Fields ◽  
Electron Drift Mobility

We have measured the electron drift mobility in a-Si:H at high electric fields (E ≤ 3.6 x 105 V%cm). The a-Si:Hpin structure was prepared at Palaiseau, and incorporated a thickp+ layer to retard high field breakdown. The drift mobility was obtained from transient photocurrent measurements from 1 ns - 1 ms following a laser pulse. Mobility increases as large as a factor of 30 were observed; at 77 K the high field mobility de¬pended exponentially upon field (exp(E/Eu), where E u= 1.1 x 105 V%cm). The same field dependence was observed in the time range 10 ns – 1 μs, indicating that the dispersion parameter change with field was negligible. This latter result appears to exclude hopping in the exponential conduction bandtail as the fundamental transport mechanism in a-Si:H above 77 K; alternate models are briefly discussed.

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