Microcharacterization of CuInSe2 Grown by Coevaporation and Selenization

1992 ◽  
Vol 283 ◽  
Author(s):  
M. H. Bode ◽  
M. M. Al-Jassim ◽  
J. Tuttle ◽  
D. Albin
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Ordered Phases ◽  
Scanning Transmission ◽  
Second Phases ◽  
The Individual ◽  
Individual Grains

ABSTRACTThin films of CuInSe2, grown by coevaporation or by selenization of a Cu-In precursor, were analyzed in a scanning transmission electron microscope. While the coevaporated film shows clear evidence of second phases (Cu2Se) around the individual grains, no second phases could be found in the selenized material. Structural characterization also showed the presence of two ordered phases in the coevaporated films, the ordered-vacancy compound CuIn2Se3.5, and a CuPt-ordered phase of CuInSe2.

A General Method for Spectrometer Design in the Scoff Approximation

1976 ◽  
Vol 34 ◽  
pp. 538-539
Author(s):  
J. R. Fields
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Energy Analysis ◽  
Incident Beam ◽  
Scanning Transmission Electron Microscope ◽  
Chemical Identification ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
General Method

The energy analysis of electrons scattered by a specimen in a scanning transmission electron microscope can improve contrast as well as aid in chemical identification. In so far as energy analysis is useful, one would like to be able to design a spectrometer which is tailored to his particular needs. In our own case, we require a spectrometer which will accept a parallel incident beam and which will focus the electrons in both the median and perpendicular planes. In addition, since we intend to follow the spectrometer by a detector array rather than a single energy selecting slit, we need as great a dispersion as possible. Therefore, we would like to follow our spectrometer by a magnifying lens. Consequently, the line along which electrons of varying energy are dispersed must be normal to the direction of the central ray at the spectrometer exit.

Resolution in the Scanning Transmission Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 454-455
Author(s):  
M. G. R. Thomson
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Spherical Aberration ◽  
Signal To Noise Ratio ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Objective Lens ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

The variation of contrast and signal to noise ratio with change in detector solid angle in the high resolution scanning transmission electron microscope was discussed in an earlier paper. In that paper the conclusions were that the most favourable conditions for the imaging of isolated single heavy atoms were, using the notation in figure 1, either bright field phase contrast with β0⋍0.5 α0, or dark field with an annular detector subtending an angle between ao and effectively π/2.The microscope is represented simply by the model illustrated in figure 1, and the objective lens is characterised by its coefficient of spherical aberration Cs. All the results for the Scanning Transmission Electron Microscope (STEM) may with care be applied to the Conventional Electron Microscope (CEM). The object atom is represented as detailed in reference 2, except that ϕ(θ) is taken to be the constant ϕ(0) to simplify the integration. This is reasonable for θ ≤ 0.1 θ0, where 60 is the screening angle.

Measurement of lattice parameter at the nanometer scale using convergent-beam microdiffraction from a thermal emission source

1993 ◽  
Vol 51 ◽  
pp. 690-691
Author(s):  
W. T. Pike
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Thermal Emission ◽  
Lattice Parameter ◽  
Scanning Transmission Electron Microscope ◽  
Emission Source ◽  
Device Structure ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Convergent Beam

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.

Development of Line Analysis and Real-Time Elemental Mapping System in Stem Equipped with a Two-Window Energy Filter

2001 ◽  
Vol 7 (S2) ◽  
pp. 1134-1135
Author(s):  
K. Kaji ◽  
T. Aoyama ◽  
S. Taya ◽  
S. Isakozawa
Keyword(s):  
Electron Microscope ◽  
Energy Loss ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Elemental Mapping ◽  
Additional Function ◽  
Edge Structure ◽  
Transmission Electron ◽  
Mapping System ◽  
Scanning Transmission

The ability to obtain elemental maps processed by using inelastically scattered electrons in a transmission electron microscope (TEM) or a scanning transmission electron microscope (STEM) is extremely useful in the analysis of materials, and semiconductor devices such as ULSI’s and GMR heads. Electron energy loss spectra (EELS) also give useful information not only to identify unknown materials but also to study chemical bonding states of the objective atoms. Hitachi developed an elemental mapping system, consisting of a STEM (Hitachi, HD- 2000) equipped with a two-window energy filter (Hitachi, ELV-2000), and performed realtime conventional jump-ratio images with nanometer resolution by in-situ calculation of energy-filtered signals [1]. Additional function of acquiring EELS along any lines on specimen has been developed in this system to investigate the energy loss near edge structure (ELNES).Figure 1 shows a schematic figure of the two-window energy filter, consisting of two quadrupole lenses for focusing and zooming spectra, respectively, a magnetic prism spectrometer, a deflection coil and two kinds of electron beam detectors.

Fast Throughput Low Voltage Scanning Transmission Electron Microscope Imaging of Nano-Resolution Three Dimensional Tissue

2009 ◽  
Vol 15 (S2) ◽  
pp. 642-643
Author(s):  
M Bolorizadeh ◽  
HF Hess
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Low Voltage ◽  
Three Dimensional ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Microscope Imaging ◽  
Electron Microscope Imaging ◽  
Voltage Scanning

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Sign in / Sign up

Export Citation Format

Share Document