Single-Source Precursors to Titanium Nitride Thin Films

1992 ◽  
Vol 282 ◽  
Author(s):  
Charles H. Winter ◽  
T. Suren Lewkebandara ◽  
Philip H. Sheridan ◽  
James W. Proscia
Keyword(s):  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Silicon Substrates ◽  
Single Source ◽  
X Ray Diffraction ◽  
Single Source Precursors ◽  
X Ray ◽  
Low Levels ◽  
Nonpolar Organic ◽  
Substrate Temperatures

ABSTRACTThe syntheses of the first single-source precursors to gold-colored titanium nitride films are reported. The precursors have the empirical formula [TiCl2(NHR)2(NH2R)0–2] and [TiCl4(NH3)2] and are obtained upon treatment of titanium tetrachloride with alkylamines or ammonia in nonpolar organic solvents. Both precursors sublime without decomposition between 80–120 °C and 0.01–0.1 mmHg. Deposition of titanium nitride films on glass and silicon substrates was achieved using either precursor at substrate temperatures of 475–600 °C. The films were characterized by x-ray diffraction, resistivity measurements, and X-ray photoelectron spectroscopy. In particular, low levels of carbon and chlorine contaminants were observed in the films.

scholarly journals Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

scholarly journals X-Ray Photoemission Study of the Oxidation of Hafnium

2009 ◽  
Vol 2009 ◽  
pp. 1-6 ◽  
Author(s):  
A. R. Chourasia ◽  
J. L. Hickman ◽  
R. L. Miller ◽  
G. A. Nixon ◽  
M. A. Seabolt
Keyword(s):  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Chemical Reactivity ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
X Ray ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Photoemission Study ◽  
Substrate Temperatures

About 20 Å of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300∘C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600∘C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO2 at substrate temperature around 300∘C for the first type of samples and at substrate temperature greater than 550∘C for the second type.

Facile deposition of carbon-doped TiO2 films by two-electrode electrodeposition setup

2021 ◽  
pp. 2150175
Author(s):  
Necati Basman ◽  
Mehmet Gokcen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Diffuse Reflectance Spectroscopy ◽  
Carbon Doping ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
High Carbon ◽  
X Ray ◽  
Carbon Doped ◽  
Surface Areas ◽  
Uv Visible

This study presents a simple electrochemical deposition route to obtain carbon-doped TiO2 films. The deposition of the films is carried out on silicon substrates from a mixture of methanol (CH3OH) and Titanium (IV) isopropoxide (Ti[OCH(CH3)2]4) solution using a simple two-electrode electrodeposition setup. The obtained films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Visible diffuse reflectance spectroscopy (DRS) and conductivity measurements. Depending on the deposition conditions, both amorphous and crystalline TiO2 films could be obtained. It is found that carbon is doped both substitutionally and interstitially. High carbon doping (up to 18.96%) enables to obtain TiO2 film with narrowed bandgap and high conductivity to about 2.3 eV and [Formula: see text] S cm[Formula: see text], respectively. This study suggests that the proposed electrodeposition route offers an easy way of obtaining conductive and narrowed bandgap TiO2 films on large surface areas.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

Deposition and Properties of AlN Films Prepared by Low Pressure CVD with a Metalorganic Precursor

1993 ◽  
Vol 335 ◽  
Author(s):  
M. J. Cook ◽  
P. K. Wu ◽  
N. Patibandla ◽  
W. B. Hillig ◽  
J. B. Hudson
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Low Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fiber Coating ◽  
Pressure Chemical ◽  
Substrate Temperatures ◽  
Carbon Concentrations

AbstractAluminum nitride films were deposited on Si (100) and sapphire (1102) substrates by low pressure chemical vapor deposition using the metalorganic precursor trisdimethylaluminum amide, [(CH3)2AlNH2]3. Depositions were carried out in a cold wall reactor with substrate temperatures between 500 and 700 °C and precursor temperatures between 50 and 80 °C. The films were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy and scanning electron microscopy. The films were generally smooth and adherent with colors ranging from transparent to opaque grey. Cracking and spallation were seen to occur at high film thickness. Deposition rates ranged from 20 to 300 Å/min and increased with both precursor and substrate temperature. Carbon concentrations were small, < 5 at. %, while oxygen concentrations were higher and showed a characteristic profile versus depth in the film. High temperature compatibility testing with sapphire/AlN/MoSi2 samples was carried out to determine film effectiveness as a fiber coating in a composite.

In Air Synthesis of Bi2S3 and PbS Microcrystals by Thermolysis of Single-Source Precursors

2009 ◽  
Vol 79-82 ◽  
pp. 1343-1346
Author(s):  
Zhen Ni Du ◽  
Yong Cai Zhang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Inert Gases ◽  
Formation Mechanisms ◽  
Single Source ◽  
X Ray Diffraction ◽  
Single Source Precursors ◽  
X Ray ◽  
Phase Pure ◽  
Scanning Electron

Without the protection of inert gases or vacuum environment, rod-like Bi2S3 and cubic-shaped PbS microcrystals were synthesized directly via pyrolyzing corresponding metal diethyldithiocarbamates in air at 300 °C for 3 h. The products have been characterized by X-ray diffraction and scanning electron microscope, and their possible formation mechanisms were also tentatively proposed. Furthermore, control experiments with multiple-source precursors revealed that our single-source precursors played an important role in preparing phase-pure Bi2S3 and PbS.

INFLUENCE OF SUBSTRATE TEMPERATURE ON THE COMPOSITION, ELECTRICAL RESISTIVITY AND INFRARED EMISSIVITY OF PtOx FILMS

2019 ◽  
Vol 26 (09) ◽  
pp. 1950056
Author(s):  
WENBO KANG ◽  
DONGMEI ZHU ◽  
XIAOKE LU ◽  
ZHIBIN HUANG ◽  
WANCHENG ZHOU ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Infrared Emissivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure Morphology ◽  
Influence Of Substrate ◽  
Substrate Temperatures

PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200∘C to 400∘C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.

Hot Filament Assisted CVD of Titanium Nitride Films

1993 ◽  
Vol 327 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Titanium Chloride ◽  
X Ray ◽  
Aluminum Metallization ◽  
Temperature Deposition ◽  
Hot Filament

AbstractTitanium nitride thin films have been deposited using a novel Hot Filament Chemical Vapor Deposition (HFCVD) technique. In this technique, a resistively heated tungsten wire (∼1700°C) is used to decompose ammonia to obtain highly reactive nitrogen precursor species. This approach allows for low temperature deposition of nitride thin films. In the past, we have used this method to deposit good quality silicon and aluminum nitride films. Titanium nitride thin films have been deposited on Si(100) at substrate temperatures from 500°C to 600°C. These films were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction, Rutherford backscattering spectroscopy (RBS) and scanning electron microscopy. The effects of deposition pressure, substrate temperature and titanium chloride flow rate on film properties have been studied. TiN films with resistivities as low as 80.0 μΩ-cm have been deposited. RBS analysis indicates that the films serve as excellent diffusion barriers for copper and aluminum metallization on silicon.

Influence of N2 Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

2021 ◽  
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with a different N2 flow rate of 0, 12, 17, 25, 38, 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of the N2 flows. On the other hand, the resistivity increases, the crystal size decreases, and the crystal structure transitions from &beta;-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5 (130,040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, and dependent on the crystal size and crystal phase structure.

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