Surface Chemistry of GaAs(100) after Treatment with Aqueous H3PO4 Solution

1992 ◽  
Vol 282 ◽  
Author(s):  
V. A. Burrows ◽  
V. S. G. Kondapuram
Keyword(s):  
Thin Film ◽  
New Species ◽  
Surface Chemistry ◽  
Chemical Nature ◽  
Acid Solutions ◽  
Chemical Cleaning ◽  
Chemical Treatments ◽  
Left Behind ◽  
Aqueous Acid ◽  
Wet Chemical

ABSTRACTThe interaction of semiconductor surfaces with aqueous acid solutions is important in chemical cleaning and etching. Wet chemical treatments are advantageous because they cause little damage to the surface and do not usually require high temperatures. The surface chemistry of GaAs after treatment with phosphoric acid was studied using multiple internal reflection infrared spectroscopy. The treatment left behind a thin film containing several types of PxOy bonds. The chemical nature of the film was observed to change with time as new species would form on the surface.

Surface Chemistry of Silicon and Germanium Treated with Hydrofluoric Acid Solutions: Slow Reactions of Process Residuals

1990 ◽  
Vol 204 ◽  
Author(s):  
J. Yota ◽  
V.A. Burrows
Keyword(s):  
Thin Film ◽  
Infrared Spectroscopy ◽  
Reaction Mechanism ◽  
Surface Chemistry ◽  
Hydrofluoric Acid ◽  
Ammonium Fluoride ◽  
Ammonium Salts ◽  
Acid Solutions ◽  
Reactive Intermediate ◽  
Silicon And Germanium

ABSTRACTSolutions of hydrofluoric acid are used extensively in the processing of semiconductors, primarily in etching and in oxide stripping procedures. Such solutions are often buffered with ammonium fluoride to insure constant oxide stripping rates. Infrared spectroscopy of silicon and germanium surfaces treated with such solutions indicates that a thin film of ammonium salts will deposit on the materials unless they are immediately and very thoroughly rinsed following treatment. This thin film, comprised initially of ammonium bifluoride (NH4FHF), reacts with the semiconductor material to form ammonium fluoride (NH4F) as a reactive intermediate, and ammonium hexafluorometallate ((NH4)2 SiF6 or (NH4)2 GeF6). These reactions occur very slowly, over hours or days. They are apparently driven by favorable thermodynamics. This explanation is supported by the absence of comparable reactions using analogous chlorine-based solutions (HCI/NH4 CI). Aspects of the reaction mechanism for hexafluorometallate production is presented.

scholarly journals Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

2014 ◽  
Vol 116 (23) ◽  
pp. 233502 ◽  
Author(s):  
Jascha Lehmann ◽  
Sebastian Lehmann ◽  
Iver Lauermann ◽  
Thorsten Rissom ◽  
Christian A. Kaufmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Chemical Cleaning ◽  
Wet Chemical

Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla
Keyword(s):  
Oxygen Content ◽  
Oxide Thickness ◽  
Morphological Data ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Chemical Cleaning ◽  
Force Microscopy ◽  
Chemical Treatments ◽  
Atomic Force ◽  
Interfacial Oxygen

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.

Effects of Wet Chemical Oxidation on Surface Functionalization and Morphology of Highly Oriented Pyrolytic Graphite

2020 ◽  
Author(s):  
Mikhail Trought ◽  
Isobel Wentworth ◽  
Timothy Leftwich ◽  
Kathryn Perrine
Keyword(s):  
Surface Functionalization ◽  
Functional Group ◽  
Pyrolytic Graphite ◽  
Surface Oxidation ◽  
Chemical Oxidation ◽  
Synthesis Methods ◽  
Acid Solutions ◽  
Highly Oriented Pyrolytic Graphite ◽  
Wet Chemical ◽  
Surface Morphologies

The knowledge of chemical functionalization for area selective deposition (ASD) is crucial for designing the next generation heterogeneous catalysis. Surface functionalization by oxidation was studied on the surface of highly oriented pyrolytic graphite (HOPG). The HOPG surface was exposed to with various concentrations of two different acids (HCl and HNO3). We show that exposure of the HOPG surface to the acid solutions produce primarily the same -OH functional group and also significant differences the surface topography. Mechanisms are suggested to explain these strikingly different surface morphologies after surface oxidation. This knowledge can be used to for ASD synthesis methods for future graphene-based technologies.

Studying the Efficiency of Inhibitors in Chemical Cleaning of Heat-and-Power Equipment by Citric Acid Solutions

2020 ◽  
Vol 67 (1) ◽  
pp. 68-71
Author(s):  
R. T. Burganov ◽  
A. R. Gilmullina ◽  
M. A. Kirilova ◽  
E. A. Kovrizhnykh
Keyword(s):  
Citric Acid ◽  
Power Equipment ◽  
Acid Solutions ◽  
Chemical Cleaning

Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH4F Treated Si(111) Surfaces

1992 ◽  
Vol 259 ◽  
Author(s):  
Takeo Hattori ◽  
Hiroki Ogawa
Keyword(s):  
Photoelectron Spectroscopy ◽  
Attenuated Total Reflection ◽  
Native Oxide ◽  
X Ray ◽  
Chemical Treatments ◽  
Chemical Structures ◽  
Native Oxides ◽  
Ft Ir ◽  
Wet Chemical ◽  
Silicon Interface

ABSTRACTChemical structures of native oxides formed during wet chemical treatments on NH4F treated Si(111) surfaces were investigated using X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed Infrared Attenuated Total Reflection(FT-IR-ATR). It was found that the amounts of Si-H bonds in native oxides and those at native oxide/silicon interface are negligibly small in the case of native oxides formed in H2SO4-H2O2-H2O solution. Based on this discovery, it was confirmed that native oxides can be characterized by the amount of Si-H bonds in native oxides. Furthermore, it was found that the combination of various wet chemical treatments with the treatment in NH4OH-H2O2-H2O solution results in the drastic decrease in the amount of Si-H bonds in native oxides.

Wet chemical treatments of high purity Ge crystals for γ-ray detectors: Surface structure, passivation capabilities and air stability

2015 ◽  
Vol 161 ◽  
pp. 116-122 ◽  
Author(s):  
S. Carturan ◽  
G. Maggioni ◽  
S.J. Rezvani ◽  
R. Gunnella ◽  
N. Pinto ◽  
...  
Keyword(s):  
Surface Structure ◽  
High Purity ◽  
Chemical Treatments ◽  
Wet Chemical ◽  
Γ Ray
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