The Negative Persistent Photoconductivity in the Deep Quantum Wells

1992 ◽  
Vol 281 ◽  
Author(s):  
Ikai Lo ◽  
W. C. Mttchel ◽  
C. E. Stutz ◽  
M. Y. Yen
Keyword(s):  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Low Temperatures ◽  
General Property ◽  
Quantum Hall ◽  
Time Dependent ◽  
Persistent Photoconductivity ◽  
Deep Donor ◽  
Dx Center ◽  
Haas Effect

ABSTRACTWe have measured the Shubnikov-de Haas effect and Quantum Hall effect on the AlxGa1−xSb/InAs quantum wells for the A1 composition (x) from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions. It confirmed the prediction of ionized deep donor model that the NPPC effect is a general property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors has the similar property to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. By comparing with the concentration of the DX center-like deep donor in the bulk AlxGa1−xSb, we believe that the ionized deep donors which cause the NPPC in the AlxGa1−xSb,/InAs QW's are the DX center-like deep donors in the AlxGa1−xSb layers.

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Quantum hall effect in a system of gapless Dirac fermions in HgTe quantum wells

JETP Letters ◽  
2015 ◽  
Vol 100 (11) ◽  
pp. 724-730 ◽  
Author(s):  
D. A. Kozlov ◽  
Z. D. Kvon ◽  
N. N. Mikhailov ◽  
S. A. Dvoretskii
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Dirac Fermions

Quantum Hall effect in HgTe quantum wells at nitrogen temperatures

2014 ◽  
Vol 105 (13) ◽  
pp. 132102 ◽  
Author(s):  
D. A. Kozlov ◽  
Z. D. Kvon ◽  
N. N. Mikhailov ◽  
S. A. Dvoretskii ◽  
S. Weishäupl ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall

scholarly journals HgTe quantum wells with inverted band structure: Quantum Hall effect and the large-scale impurity potential

2019 ◽  
Vol 45 (4) ◽  
pp. 412-418 ◽  
Author(s):  
S. V. Gudina ◽  
Yu. G. Arapov ◽  
V. N. Neverov ◽  
S. M. Podgornykh ◽  
M. R. Popov ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Large Scale ◽  
Quantum Hall ◽  
Impurity Potential

PECULIARITIES OF ELECTRON TRANSPORT IN THE COUPLED AlGaAs/GaAs QUANTUM WELLS WITH THIN CENTRAL AlAs BARRIER

2003 ◽  
Vol 02 (06) ◽  
pp. 565-573
Author(s):  
V. A. KULBACHINSKII ◽  
R. A. LUNIN ◽  
I. S. VASIL'EVSKII ◽  
G. B. GALIEV ◽  
V. G. MOKEROV ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Energy Structure ◽  
High Magnetic Fields ◽  
Single Quantum Well ◽  
Coupled Quantum Wells ◽  
Self Consistent ◽  
L 13 ◽  
Subband Structure

GaAs / AlGaAs structures with single quantum well (QW) of different width and with coupled quantum wells separated by central barrier of six monolayers of AlAs have been synthesized by MBE. The temperature dependence of resistance, Hall electron concentration and mobility were investigated in the temperature interval 4.2 K <T<300 K . Shubnikov–de Haas (SdH) oscillations and quantum Hall effect were also investigated in high magnetic fields up to 38 T. The influence of thin central barrier on the subband energy structure and electron mobility was analyzed for three values of QW width L=13, 26 and 35 nm. Self-consistent calculations of the subband structure and envelope wave function were carried out.

Quantum Hall effect in InAs/AlSb quantum wells

1991 ◽  
Vol 58 (13) ◽  
pp. 1428-1430 ◽  
Author(s):  
P. F. Hopkins ◽  
A. J. Rimberg ◽  
R. M. Westervelt ◽  
G. Tuttle ◽  
H. Kroemer
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall

scholarly journals Two-subband quantum Hall effect in parabolic quantum wells

2007 ◽  
Author(s):  
C. Ellenberger ◽  
B. Simovič ◽  
R. Leturcq ◽  
T. Ihn ◽  
S. E. Ulloa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Parabolic Quantum Wells

FURTHER EVIDENCE FOR A COLLAPSE OF THE EXCHANGE-ENHANCED SPIN SPLITTING IN TWO DIMENSIONAL SYSTEMS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3597-3602 ◽  
Author(s):  
B. A. PIOT ◽  
D. K. MAUDE ◽  
Z. R. WASILEWSKI ◽  
K. J. FRIEDLAND ◽  
R. HEY ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Good Description ◽  
Quantum Hall ◽  
Exchange Interactions ◽  
Spin Splitting ◽  
Spin Gap ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

The collapse of spin splitting in the integer quantum Hall effect is investigated for a series of Al x Ga 1-x As / GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature, and a simple model is developed to simulate spin splitting. As expected a single-electron picture cannot reproduce the observed spin splitting, whereas a phenomenological enhanced-spin gap taking into account exchange interactions between electrons provides a good description. The phenomenological spin gap, which is linear in B at high magnetic field, collapses when the spin splitting collapses. This is consistent with previously proposed disorder-driven destruction of exchange interactions with decreasing magnetic field.

scholarly journals Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

JETP Letters ◽  
2018 ◽  
Vol 107 (12) ◽  
pp. 794-797 ◽  
Author(s):  
V. T. Dolgopolov ◽  
M. Yu. Melnikov ◽  
A. A. Shashkin ◽  
S.-H. Huang ◽  
C. W. Liu ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Fractional Quantum Hall Effect ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Sige Quantum Wells
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