Atomic Arrangement of Al Near the Phase Boundaries Between √3×√3-A1 and 7×7 Structures on Si(111) Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
Katsuya Takaoka ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Phase Transition ◽  
Scanning Tunneling Microscopy ◽  
Domain Boundary ◽  
Scanning Tunneling ◽  
Lower Side ◽  
Tunneling Microscopy ◽  
Phase Boundaries ◽  
Atomic Arrangement ◽  
Dimer Structure

ABSTRACTScanning tunneling microscopy (STM) is used to study the structure of Al-√3×√3 domains on the Si(lll)-7×7 surface and the atomic arrangement near the domain boundary. Al-√3×√3 domains grow from the lower side of the <112> step and extend over the Si-7×7 terrace. The phase transition is observed to occur in units of the 7×7 size. Detailed investigation at around the boundary reveals that faulted halves of the 7×7 unit are adjacent to the boundary on the Si-7×7 side, while on the Al-√3×√3 side, Al adatoms occupy the T4 sites except for the rows adjacent to the phase boundaries where Al atoms occupy the Si adatom sites. The latter Al atoms play an important role to retain the dimer structure at the boundary.

Atomic Arrangement of Al Near the Phase Boundaries Between-√3X-√3-Al and 7X7 Structures on Si(111) Surfaces

1992 ◽  
Vol 295 ◽  
Author(s):  
Katsuya Takaoka ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Phase Transition ◽  
Scanning Tunneling Microscopy ◽  
Domain Boundary ◽  
Scanning Tunneling ◽  
Lower Side ◽  
Tunneling Microscopy ◽  
Phase Boundaries ◽  
Atomic Arrangement ◽  
Dimer Structure

AbstractScanning tunneling microscopy (STM) is used to study the structure of Al-√3×√3 domains on the Si(111)-7×7 surface and the atomic arrangement near the domain boundary. Al-√3×√3 domains grow from the lower side of the <112> step and extend over the Si-7×7 terrace. The phase transition is observed to occur in units of the 7×7 size. Detailed investigation at around the boundary reveals that faulted halves of the 7×7 unit are adjacent to the boundary on the Si-7×7 side, while on the Al-√3×√3 side, Al adatoms occupy the T4 sites except for the rows adjacent to the phase boundaries where Al atoms occupy the Si adatom sites. The latter Al atoms play an important role to retain the dimer structure at the boundary.

scholarly journals In situ video-STM studies of the mechanisms and dynamics of electrochemical bismuth nanostructure formation on Au

2016 ◽  
Vol 193 ◽  
pp. 171-185 ◽  
Author(s):  
H. Matsushima ◽  
S.-W. Lin ◽  
S. Morin ◽  
O. M. Magnussen
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Temporal Resolution ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Deposit Morphology ◽  
Tunneling Microscopy ◽  
Atomic Arrangement ◽  
Surface Plane ◽  
Structural Fluctuations

The microscopic mechanisms of Bi electrodeposition on Au(111) and Au(100) electrodes in the overpotential regime were studied by in situ scanning tunneling microscopy with high spatial and temporal resolution. Atomic resolution images of the needle-like Bi(110) deposits formed on Au(111) reveal the central influence of covalent Bi–Bi bonds on the deposit morphology. In the straight steps along the needle edges the Bi atoms are interlinked by these bonds, whereas at the needle tip and at kinks along the needle edges dangling bonds exist, explaining the rapid structural fluctuations at these sites. For ultrathin Bi deposits on Au(100) a more open atomic arrangement was found within the surface plane, which was tentatively assigned to an epitaxially stabilised Bi(111) film. Furthermore, well-defined nanowires, consisting of zigzag chains of Bi surface atoms, were observed on this surface.

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