Effects of Initial Substrate Surface on Microstructure of Si3N4 Deposited by LPCVD

1992 ◽  
Vol 280 ◽  
Author(s):  
Woo Y. Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Low Pressure ◽  
The Other ◽  
Initial Substrate ◽  
Pressure Chemical

ABSTRACTThe morphology of Si3N4 deposited on Al2O3, BN, and SiC by low pressure chemical vapor deposition (LPCVD) was characterized as a function of deposition temperature. At 1200°C, faceted Si3N4 crystallites were deposited on SiC whereas Si3N4 deposited on the other substrates tended to be amorphous. With an increase in temperature to 1430°C, Si3N4 deposited on these substrates was polycrystalline. At this temperature, the microstructure of Si3N4 was not significantly influenced by the changes in substrate surface.

scholarly journals Electrical Resistivity of Ni–Fe Wires Coated with Sn Using low-Pressure Chemical Vapor Deposition

Coatings ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 317
Author(s):  
Jun-Hyun Kim ◽  
Jeong Geun Bak ◽  
Chang-Koo Kim
Keyword(s):  
Electrical Resistivity ◽  
Chemical Vapor Deposition ◽  
Electron Scattering ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Reaction Products ◽  
Irregular Shapes ◽  
Pressure Chemical

In this study, we demonstrated that the deposition of Sn on Ni–Fe wires using low-pressure chemical vapor deposition (LPCVD) can be used to control the electrical resistivity of the wires. Furthermore, the effect of the deposition temperature on the resistivity of the Ni–Fe wires was investigated. The resistivity of the Sn-deposited Ni–Fe wires was found to increase monotonically with the deposition temperature from 550 to 850 °C. Structural and morphological analyses revealed that electron scattering by Ni3Sn2 and Fe3Sn particulates, which were the reaction products of LPCVD of Sn on the surface of the Ni–Fe wires, was the cause of the resistivity increase. These coalesced particulates displayed irregular shapes with an increase in the deposition temperature, and their size increased with the deposition temperature. Owing to these particulate characteristics, the Sn content increased with the deposition temperature. Furthermore, the temperature dependency of the Sn content followed a pattern very similar to that of the resistivity, indicating that the atomic content of Sn directly affected the resistivity of the Ni–Fe wires.

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 311-314 ◽  
Author(s):  
Xiao An Fu ◽  
Jacob Trevino ◽  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atom Concentration ◽  
Pressure Chemical ◽  
Sic Films

This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped (N-doped) polycrystalline 3C-SiC (poly-SiC) films deposited by low pressure chemical vapor deposition (LPCVD). N-doped poly-SiC films were deposited in a high-throughput, resistively-heated, horizontal LPCVD furnace capable of holding up to 150 mm-diameter substrates using SiH2Cl2 (100%) and C2H2 (5% in H2) precursors, with NH3 (5% in H2) as the doping gas. The deposition rate increased, while the residual stress decreased significantly as the deposition temperature increased from 825oC to 900°C. The resistivity of the films decreased significantly from 825°C to 850°C. Above 850°C, although the resistivity still decreased, the change was much smaller than at lower temperatures. XRD patterns indicated a polycrystalline (111) 3C-SiC texture for all films deposited in the temperature range studied. SIMS depth profiles indicated a constant nitrogen atom concentration of 2.6×1020/cm3 in the intentionally doped films deposited at 900°C. The nitrogen concentration of unintentionally doped films (i.e., when NH3 gas flow was zero) deposited at 900°C was on the order of 1017/cm3. The doped films deposited at 900°C exhibited a resistivity of 0.02 -cm and a tensile residual stress of 59 MPa, making them very suitable for use as a mechanical material supporting microelectromechanical systems (MEMS) device development.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped
Sign in / Sign up

Export Citation Format

Share Document