Dynamic Film Composition Transition Phenomena in the Copper Oxide Metal Organic Chemical Vapor Deposition (MOCVD) Studied by Scanning Electron Microscopy (Sem)

1992 ◽  
Vol 280 ◽  
Author(s):  
Yu-neng Chang
Keyword(s):  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Continuous Phase ◽  
Organic Chemical ◽  
Rich Phase ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Temperature Area

ABSTRACTIn this report, the impact of deposition temperature variation on the evolution of film morphology and microstructure was studied. In the copper oxide metal organic chemical vapor deposition (MOCVD) process, a temperature gradient was created on the substrate surface. By using a specific design of the heating susceptor, the local temperature of the leading edge (upstream) on the substrate surface was maintained at 70°C lower than the temperature of the ending (downstream) edge. The evolution of local composition and microstructure in deposited films were analyzed by X-ray diffraction (XRD), transmission Fourier Transform Infrared Spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and SEM. From XPS and XRD results, Cu2O rich phase was deposited at the low temperature area, while CuO rich phase was deposited at the high temperature area. These two areas were divided by a phase intermixing (transition) zone of 40–100 ums wide. The temperature of this abrupt Cu2O->CuO deposition product transition was determined to be 390°C -400°C. As indicated by SEM results, the low temperature favorite Cu2O continuous phase, collapsed into coarse grains (with the scale of 10 urn) first, then became fine grains among channels of CuO phase, and finally diminished into the high temperature favorite CuO continuous phase. Spatially resolved XPS results also indicated that the film composition changed abruptly through the transition zone. A nucleation-growth competition mechanism, between the Cu2O rich phase and the CuO rich phase, was suggested to occur in this zone. In this model, this dynamic deposition product transition is interpreted by the temperature dependency of nucleation rates for the specific CuO phase or Cu2O phase.

Metal-Organic Chemical Vapor Deposition of Zn-In-Sn-O and Ga-In-Sn-O Transparent Conducting Oxide Thin Films

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Wang ◽  
N.L. Edleman ◽  
J.R. Babcock ◽  
T.J. Marks ◽  
M.A. Lane ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Vapor Deposition ◽  
Carrier Density ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Sn Doping ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractThe metal-organic chemical vapor deposition (MOCVD) technique has been successfully applied for growth of Sn-doped transparent, conducting Zn-In-O and Ga-In-O films using Sn(acac)2, In(dpm)3, Ga(dpm)3, and Zn(dpm)2, as volatile precursors. The 25 °C electrical conductivity of the as-grown films is as high as 1030 S/cm (n-type, carrier density N = 4.5 × 1020 cm−3, mobility µ = 14.3 cm2/V•s) for the Zn-In-O series and 700 S/cm (n-type, N = 8.1 × 1019 cm−3, µ = 55.2 cm2/V•s) for the Ga-In-O series. After Sn-doping, the Zn-In-O series exhibits 25 'C electrical conductivities as high as 2290 S/cm with a higher carrier mobility, while the Ga-InO series exhibits higher electrical conductivity (3280 S/cm at 25 °C) and much higher carrier density, but with diminished mobility. All films show broader optical transparency windows than that of commercial ITO films. Reductive annealing, carried out at 400-425 °C in a flowing gas mixture of H2(4%) and N2, results in increased carrier density and mobility as high as 64.6 cm2/V•s for films without Sn doping, but lowered carrier density for the Sn-doped films. X-ray diffraction, transmission electron microscopy, micro diffraction, and high-resolution X-ray analysis show that all films with good conductivity have cubic, homogeneously doped In2O3-like crystal structures.

ZnxCd1−xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method

1997 ◽  
Vol 487 ◽  
Author(s):  
Daiji Noda ◽  
Torn Aoki ◽  
Yoichiro Nakanishi ◽  
Yoshinori Hatanaka
Keyword(s):  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Remote Plasma ◽  
X Ray ◽  
Composition Ratio ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractFor epitaxial growth of compound Zn1−xCd1−XTe by metal organic chemical vapor deposition (MOCVD), it is difficult to obtain a high composition ratio x. In this study, we have adopted a remote plasma enhanced (RPE) MOCVD method for the epitaxial growth. Cd1−xZnxTe with the composition ratio x in the range of 0 to 1 has been obtained while varying the ratio of dimethylcadmium (DMCd) to diethylzinc (DEZn) from 0 to 20%. The crystallinity of the epitaxial films was about 400 to 700 arcsec FWHM defined by X ray diffiraction measurements.

In situ X-ray studies of metal organic chemical vapor deposition of PbZrxTi1−xO3

2007 ◽  
Vol 515 (14) ◽  
pp. 5593-5596 ◽  
Author(s):  
R.-V. Wang ◽  
F. Jiang ◽  
D.D. Fong ◽  
G.B. Stephenson ◽  
P.H. Fuoss ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Properties of Pr-based high k dielectric films obtained by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 811 ◽  
Author(s):  
Raffaella Lo Nigro ◽  
Roberta G. Toro ◽  
Graziella Malandrino ◽  
Vito Raineri ◽  
Ignazio L. Fragalà
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Morphological Characteristics ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrical Measurements ◽  
Praseodymium Oxide ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTWe report the results of a recent study on the deposition of praseodymium oxides thin films on silicon substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). A suited Pr(III) β-diketonate precursor has been used as the metal source and the deposition conditions have been carefully selected because of a large variety of possible PrO2−x (x= 0−0.5) phases. Pr2O3 films have been obtained in a hot-wall MOCVD reactor under non oxidising ambient at 750°C deposition temperature. The structural and morphological characteristics of Pr2O3 films have been carried out by X-ray diffraction (XRD) and high resolution transmission electron microscopy (TEM). Chemical compositional studies have been performed by X- ray photoelectron spectroscopic (XPS) analysis and a fully understanding of the MOCVD process has been achieved. Preliminary electrical measurements point to MOCVD as a reliable growth technique to obtain good quality praseodymium oxide based films.

Metal-Organic Chemical Vapor Deposition of BiFeO3 Based Multiferroics

2014 ◽  
Vol 90 ◽  
pp. 57-65 ◽  
Author(s):  
Maria Rita Catalano ◽  
Gugliemo Guido Condorelli ◽  
Raffaella Lo Nigro ◽  
Graziella Malandrino
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ferroelectric Properties ◽  
Chemical Vapor ◽  
Piezoresponse Force Microscopy ◽  
Morphological Characterization ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

BiFeO3 films undoped and doped with Ba and/or Ti have been fabricated through Metal-Organic Chemical Vapor Deposition (MOCVD) on SrTiO3 (100), SrTiO3:Nb (100) and YSZ (100) substrates. Films have been deposited using a multi-metal source, consisting of the Bi (phenyl)3, Fe (tmhd)3, Ba (hfa)2•tetraglyme and Ti (tmhd)2(O-iPr)2 (phenyl= -C6H5, H-tmhd=2,2,6,6-tetramethyl-3,5-heptandione; O-iPr= iso-propoxide; H-hfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = CH3O(CH2CH2O)4CH3) precursor mixture. The structural and morphological characterization of films has been carried out using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). Chemical compositional studies have been performed by energy dispersive X-ray (EDX) analysis. Structural and morphological characterizations point to the formation of crystalline phases and homogeneous surfaces for both undoped and doped BiFeO3 films. Piezoresponse force microscopy (PFM) and piezoresponce force spectroscopy (PFS) have been applied to study the piezoelectric and ferroelectric properties of the films.

Effects of Cu/Ba Ratio in Precursor on MOCVD-Deposited YBa2Cu3O7-x Films on YYC Buffered Ni-W Alloy Tape

2014 ◽  
Vol 1082 ◽  
pp. 95-99
Author(s):  
Fei Zhang ◽  
Jie Xiong ◽  
Rui Peng Zhao ◽  
Yan Xue ◽  
Bo Wan Tao
Keyword(s):  
Vapor Deposition ◽  
Ybco Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Ybco Films ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Alloy Tape

To study the effects of Cu/Ba ratio of precursor on YBa2Cu3O7-x (YBCO) film, we have employed the technique of metal-organic chemical vapor deposition to prepare 500 nm thick YBCO films on CeO2/YSZ/Y2O3 (YYC) buffered Ni-W alloy tapes at series of Cu/Ba ratios of precursor. The analysis obtained from X-ray diffraction and scanning electron microscope revealed that the YBCO films crystallized better and became more continuous and denser as Cu/Ba ratio increased from 0.81 to 1.00, yielding that the critical current density (Jc) of YBCO films at 77K and 0T rose from 1.0 MA/cm2 to 1.4 MA/cm2. Moreover, the energy dispersive spectroscopy indicated that the increase in Cu/Ba ratio of precursor made the Cu/Ba ratio of the YBCO film matrix closer to the theoretical value of 1.5. However, for the Cu/Ba ratio of precursor in the range of 1.00~1.21, the crystallization and texture deteriorated severely and many unexpected precipitates of Ba-Cu-O and Cu-O arose, resulting in the dramatic drop of Jc from 1.4 MA/cm2 to 0.1 MA/cm2.

In situ synchrotron x-ray studies of strain and composition evolution during metal-organic chemical vapor deposition of InGaN

2010 ◽  
Vol 96 (5) ◽  
pp. 051911 ◽  
Author(s):  
M.-I. Richard ◽  
M. J. Highland ◽  
T. T. Fister ◽  
A. Munkholm ◽  
J. Mei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The Low-Temperature Metal-Organic Chemical Vapor Deposition (Ltmocvd) Route to Amorphous Silicon Semiconductors

1990 ◽  
Vol 192 ◽  
Author(s):  
Aain E. Kaloyeros ◽  
James W. Corbett ◽  
Paul J. Tobcano ◽  
Richard B. Rizk
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTPreliminary results are presented for a new approach proposed by the present investigators to solve the problem of light-induced degradation in amorphous silicon semiconductors. The approach uses low-temperature metal-organic chemical vapor deposition (LTMOCVD) of tailored organometallic precursors. The precursors employed are non-toxic, non-hazardous and easy to handle. In the present paper, a-Si:H films were grown, using argon with various hydrogen concentrations as carrier gas, in a cold-wall CVD reactor at a reactor pressure of 1-10 torr and substrate temperature in the range 300–450°C. Characterization studies were performed using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and extended electron-energy-loss fine structure spectroscopy (EXELFS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure--contaminant levels were below the detection limits of XPS. In addition, EXELFS results showed that short-range order (SRO), consisting of the same tetrahedral coordinated units found in crystalline silicon, does exist in all the amorphous samples, regardless of hydrogen concentration. However, the degree of stuctural disorder in the silicon local tetrahedral units decreased as hydrogen was added.

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