Effect of Si Addition on the Reaction Growth and Morphology of an Aluminide Compound in Al-Cu-Si/Ti-W Bilayers

1992 ◽  
Vol 280 ◽  
Author(s):  
M. Park ◽  
S. J. Krause ◽  
S. R. Wilson
Keyword(s):  
Cross Section ◽  
Detrimental Effect ◽  
Alloy Film ◽  
Al Alloy ◽  
Number Density ◽  
Plan View ◽  
Transmission Electron ◽  
Spike Number ◽  
Si Content ◽  
Si Addition

ABSTRACTThe effect of the addition of Si to an Al alloy on the reaction morphology of Al12W in Al-Cu-Si/Ti-W bilayers was studied with plan-view and cross-section transmission electron microscopy (TEM). The addition of 0.5 wt.% Si to an Al-0.5Cu alloy film increases multiple spiked growths of the Al12W compound by the reaction of the Al-0.5Cu-0.5Si film with the Ti-W sublayer after heat treatment at 450°C for 30 min. Increasing the Cu and Si content from 0.5 to 1.5% significantly reduced the spiked growth of Al12W into the Al-1.5Cu-1.5Si film. However the spike number density remained high compared to the reaction of a binary Al-1.5Cu film with the Ti-W layers. The result indicates that the addition of Si to form a ternary Al-Cu-Si film results in a more irregular, less planar Al12W morphology. This morphology can have a detrimental effect on thermal stability and electromigration resistance.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Three Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron Microscopy

2017 ◽  
Vol 897 ◽  
pp. 173-176 ◽  
Author(s):  
Takahiro Sato ◽  
Yuya Suzuki ◽  
Hiroyuki Ito ◽  
Toshiyuki Isshiki ◽  
Kuniyasu Nakamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Scanning Transmission Electron Microscopy ◽  
Plan View ◽  
Burgers Vector ◽  
Scanning Transmission Electron ◽  
Mixed Dislocation ◽  
Transmission Electron ◽  
Scanning Transmission

The recently developed multi directional scanning transmission electron microscopy (MD-STEM) technique has been applied to exactly determine the Burgers vector (b) and dislocation vector (u) of a threading mixed dislocation in a silicon carbide (SiC) as-epitaxial wafer. This technique utilizes repeated focused ion beam (FIB) milling and STEM observation of the same dislocation from three orthogonal directions (cross-section, plan-view, cross-section). Cross section STEM observation in the [1-100] viewing direction showed that the burgers vector have a and c components. Subsequent plan view STEM observation in the [000-1] direction indicated that the b=[u -2uuw] (u≠0 and w≠0). Final cross section STEM observation in the [11-20] direction confirmed that the dislocation was an extended dislocation, with the Burgers vector experimentally found to be b = [1-210]a/3 + [0001]c which decomposes into two partial dislocations of bp1 = [0-110]a/3 + [0001]c/2 and bp2 = [1-100]a/3 + [0001]c/2. The dislocation vector u is [-12-10]a/3 + [0001]c. This technique is an effective method to analyze the dislocation characteristics of power electronics devices.

Study on Correlate Qualitatively the Deposition Conditions with the Morphology of the Nanocomposite Films

2012 ◽  
Vol 562-564 ◽  
pp. 290-293
Author(s):  
Yong Jun Jiang
Keyword(s):  
Cross Section ◽  
Deposition Rate ◽  
Deposition Process ◽  
Nanocomposite Films ◽  
Nitrogen Partial Pressure ◽  
Target Temperature ◽  
Transmission Electron ◽  
Si Content ◽  
Sinx Layer ◽  
Deposition Conditions

In the Nb–Si–N films, Si content (CSi) was varied in each series by changing the power applied on the Si target, whereas the power on the Nb target was kept constant. The microstructure of the coatings was examined by XRD and in cross-section by transmission electron microscopy (TEM). Depending on TS and pN2, the deposition rate showed significant variations from 0.04 to 0.18 nm/s. The correlation between film morphology (preferential orientation of crystallites, grain size, column dimensions, thickness of the SiNx layer covering NbN crystallites) and the deposition conditions (power applied on Si target, temperature, nitrogen partial pressure and deposition rate) provides useful information for optimizing the deposition process.

Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 397-400
Author(s):  
Takahiro Sato ◽  
Yoshihisa Orai ◽  
Toshiyuki Isshiki ◽  
Munetoshi Fukui ◽  
Kuniyasu Nakamura
Keyword(s):  
Cross Section ◽  
Edge Dislocation ◽  
Basal Plane ◽  
Dislocation Line ◽  
Plan View ◽  
Conversion Point ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Basal Plane Dislocation

Cross section and plan view dislocation analysis at the conversion point of a basal plane dislocation (BPD) into a threading edge dislocation (TED) in a silicon carbide epitaxial wafer was developed using a newly modified multi directional scanning transmission electron microscopy (STEM) technique. Cross section STEM observation in the [-1100] direction, found a conversion point located 5.5 μm from the surface, where two dislocation lines in the basal plane convert into one dislocation line nearly along the hexagonal c axis was observed. Using plan view STEM observation along the [000-1] direction, it is confirmed that the dislocation lines are two partial dislocations of a BPD and one TED by g·b invisibility analysis. This new technique is a powerful tool to evaluate the fundamental dislocation characteristics of power electronics devices.

Defect Generation And Evolution In The Hydrothermal Growth Of Epitaxial BaTiO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
L. Zhao ◽  
A. T. Chien ◽  
F. F. Lange ◽  
J. S. Speck
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Interfacial Layer ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Plan View ◽  
Transmission Electron ◽  
Defects Analysis ◽  
Film Substrate ◽  
Growth Evolution

ABSTRACTThe structure of epitaxial BaTiO3 thin films prepared by hydrothermal synthesis on (001) SrTiO3 substrates was studied by transmission electron microscopy (TEM). The growth evolution was followed from initial island formation, through island impingement and fusion. Plan view and cross-section imaging demonstrated that the films grew by an unusual islanding mechanism. Electron diffraction showed the islands and the fully formed film are single crystal with mosaic character and in all cases strain relaxed. Cross-section TEM of the early growth films showed a several monolayer thick interfacial layer and the film/substrate region had no misfit dislocations. In the fully formed films, this interfacial layer was not observed, however a clear misfit dislocation network was observed. Defects analysis shows that the misfit dislocations have pure edge character with <100> Une directions, and <010> Burgers vectors (parallel to the film/substrate interface).

Optimization of TEM Sample Preparation to Reduce the Overlapping of TEM Images

2014 ◽  
Author(s):  
Shuqing Duan ◽  
Summer Chen ◽  
Paul Yu ◽  
Ming Li ◽  
Mark Zhang ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Ion Beam ◽  
Top Down ◽  
Preparation Methods ◽  
Plan View ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Sample Preparation Methods ◽  
Section Sample

Abstract This paper reports optimized Transmission Electron Microscopy (TEM) sample preparation methods with Focus Ion Beam (FIB), which are used to reduce or avoid the overlapping of TEM images. Several examples of optimized cross-section sample preparation on 38nm and 45nm pitch are provided with general and novel FIB methods. And its application to plan view TEM sample preparation is also shown. The results establish that the proposed method is useful to reduce or remove pattern overlapping effects in dense structures and can produce higher quality TEM images than can be obtained using conventional top-down FIB-based TEM preparation methods.

Characterization of Cu-Al alloy/SiO2 interface microstructure

2000 ◽  
Vol 615 ◽  
Author(s):  
Pei-I Wang ◽  
S. P. Murarka ◽  
G.-R. Yang ◽  
E. Barnat ◽  
T.-M. Lu ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Alloy Film ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
Adhesion Promoter ◽  
Adhesion Promoters ◽  
Barrier Formation ◽  
Transmission Electron ◽  
Before And After ◽  
Sputter Deposited

ABSTRACTCu-Al alloys have been recommended for application as the diffusion barriers/adhesion promoters for advanced copper based metallization schemes. This approach to barrier formation is to generate an ultra-thin interfacial layer through Cu alloying without significantly affecting the resistivity of Cu. In this paper the microstructure of the bilayers of Cu/Cu-5 at%Al and Cu-5 at%Al/Cu sputter deposited on SiO2 before and after thermal annealing is investigated by transmission electron microscopy (TEM). Interfacial layer is observed in both cases. The variation of the resistance of the Cu-Al alloy film is consistent with its microstructure. The x-ray diffraction (XRD) spectra of Cu-5 at%Al on SiO2 shows that the addition of Al into Cu intends to favor the Cu (111) texture. These results will be presented and discussed showing that films of Cu doped with Al appear to act as a suitable barrier and adhesion promoter between SiO2 and Cu.

scholarly journals Edge-On Ion Irradiation of Electron Microscope Specimens

1992 ◽  
Vol 268 ◽  
Author(s):  
Mauro P. Otero ◽  
Charles W. Allen
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Ion Irradiation ◽  
Special Technique ◽  
Plan View ◽  
Depth Direction ◽  
Transmission Electron ◽  
Foil Specimen

ABSTRACTA special technique is described for in situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen. That is, instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction with respect to the irradiation. The results of amorphization of Si, irradiated in this orientation by 1 or 1.5 MeV Kr, are presented and briefly compared with the usual plan view observations. The limitations of the technique are discussed and several experiments which might profitably employ this technique are suggested.

Growth of CeO2 thin films deposited on biaxially textured nickel substrates

2003 ◽  
Vol 18 (1) ◽  
pp. 14-26 ◽  
Author(s):  
D. Eyidi ◽  
M. D. Croitoru ◽  
O. Eibl ◽  
R. Nemetschek ◽  
W. Prusseit
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Buffer Layers ◽  
Plan View ◽  
Ni Substrate ◽  
Transmission Electron ◽  
Nickel Substrates

CeO2 films are technologically important as buffer layers for the integration of superconducting YBa2Cu3O7−δ films on {100}-biaxially textured Ni substrates, yielding a Ni–CeO2–YBa2Cu3O7−δ layer sequence. The Ni–CeO2 interface is a metal–oxide interface, and the misfit between substrate and film is about 9%. An epitaxial growth model was suggested for this system in the literature. The investigated films were deposited by a reactive thermal evaporation process at substrate temperatures of 650–670 °C with a thickness of 100 nm after deposition. The CeO2 films were characterized by plan-view and cross-section transmission electron microscopy, atomic force microscopy, and scanning electron microscopy. The CeO2 films had a strong {100} biaxial texture with a roughness of approximately 90 nm. No intermediate layer could be found by cross-section transmission electron microscopy at the Ni–CeO2 interface. The films had columnar grains with diameters of 20–50 nm, much smaller than the grain size of the Ni substrate, which was larger than 1 μm. Small-angle grain boundaries and small amounts of 〈111〉-oriented grains were evidenced in plan-view samples by diffraction patterns. The Moiré fringes technique was applied and was ideally suited to image the small rotations (≤3°) of the small CeO2 grains with respect to the Ni substrate. These small rotations of small grains showed that the growth was nonepitaxial, however, biaxially textured. In the CeO2 film samples, nanovoids 5–10 nm in size were observed and were mostly located close to the film surface. A model for the growth of CeO2 thin films on nickel substrates can be proposed on the basis of our results.

scholarly journals Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

2001 ◽  
Vol 693 ◽  
Author(s):  
Z. Liliental-Weber ◽  
J. Jasinski ◽  
D. Cherns ◽  
M. Baines ◽  
R. Davis
Keyword(s):  
Electron Microscopy ◽  
Silicon Nitride ◽  
Cross Section ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Plan View ◽  
Mask Layer ◽  
Transmission Electron ◽  
Different Types

AbstractTransmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3° tilt between wing and seed areas, caused by additional nucleation on the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.

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