High Resolution X-Ray Diffraction of Hg1-xMnx Te Epitaxial Films

1992 ◽  
Vol 280 ◽  
Author(s):  
B K Tanner ◽  
T D Hallam ◽  
M Funaki ◽  
A W Brinkman
Keyword(s):  
Epitaxial Films ◽  
Substantial Variation ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Contour Maps ◽  
Significant Difference ◽  
Direct Alloy ◽  
Cdznte Substrates ◽  
Layer Peak

ABSTRACTEpitaxial films of Hg1-xMnxTe (MMT) have been grown by direct alloy growth MOVPE. Perfection of layers grown on CdTe buffered GaAs, and unbuffered CdZnTe substrates has been assessed by double axis X-ray diffraction. No significant difference was observed in the rocking curve full width at half maximum (FWHM) between layers grown on the two types of substrate. Rocking curves taken as a function of position across the layer showed substantial variation, there being a very good correlation between layer thickness determined from the intensity of the substrate peak, layer rocking curve FWHM and Mn composition determined from the substrate and layer peak splitting. The contour maps of these parameters are discussed in terms of depletion of the DIPTe precursor.

Pole Figure Analysis of Epitaxial Films of ZnO:2wt%Al Grown on Sapphire Substrates by RF Magnetron Sputtering

2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
S. Fiechter ◽  
K. Ellmer
Keyword(s):  
Magnetron Sputtering ◽  
Pole Figure ◽  
Room Temperature ◽  
Defect Density ◽  
Rf Magnetron Sputtering ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractAluminium-doped zinc oxide (ZnO:Al) films have been grown on c-plane (001) and a-plane (110) sapphire by RF magnetron sputtering from a ceramic target. The films grew epitaxially, even at room temperature. However, the crystalline quality depends both on the substrate temperature as well as on the sapphire orientation. The best films, proved by X-ray diffraction (rocking curves and pole figure measurements) were grown on (110)-oriented sapphire in the temperature range 473 to 773 K. The minimum rocking curve half width was about 0.75 °. By Rutherford backscattering analysis it could be shown, that the films exhibit a significant variation of the defect density over the film thickness. The highest density, as expected, is observed at the interface sapphire/ZnO:Al. Films grown on (001)-oriented sapphire have higher rocking curve half widths (about 1.3 °) and exhibit sometimes two types of domains in the same film twisted by 30 °.

Growth and Properties of Epitaxial YBa2Cu3O7 thin Films on{1102}Al2O3

1989 ◽  
Vol 169 ◽  
Author(s):  
D. K. Fork ◽  
T. H. Geballe ◽  
K. Char ◽  
S. S. Laderman ◽  
R. Taber ◽  
...  
Keyword(s):  
Surface Resistance ◽  
Epitaxial Films ◽  
Full Width ◽  
Zero Temperature ◽  
X Ray Diffraction ◽  
Critical Temperatures ◽  
Rocking Curve ◽  
X Ray ◽  
Zero Resistance ◽  
Resistance Data

AbstractEpitaxial YBa2Cu3O7 (YBCO) films were grown on r‐plane A12O3 {1102} by laser ablation. X‐ray diffraction shows that films are epitaxial with the c‐axis perpendicular to the substrate and the a or b axes parallel to (2201), although the full width at half maximum of the rocking curve is larger compared to those of epitaxial films on SrTiO3. The critical temperatures (zero resistance) are between 85 K and 88 K with transition widths between 0.5 K and 3 K. The 300 K resistivity of 250 μΩextrapolates to zero at zero temperature and the critical current is as high as 5 x 106 A/cm2 at 4.2 K according to magnetization hysteresis measurements. Surface resistance data shows that 2000 Å thick epitaxial films on {1102} have about 1 mΩ at 13 GHz at 4.2 K.

Strain Mapping in InGaAsP Epitaxial Films by An X-Ray Diffraction Technique

1985 ◽  
Vol 54 ◽  
Author(s):  
Jharna Chaudhuri ◽  
William E. Mayo ◽  
Sigmund Weissmann
Keyword(s):  
Electronic Materials ◽  
Strain Tensor ◽  
Diffraction Method ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Strain Mapping ◽  
Rocking Curve ◽  
X Ray ◽  
Inp Substrate ◽  
Elastic Strain Tensor

ABSTRACTA new x-ray diffraction method is developed to determine the full elastic strain tensor and its distribution about a strain center in single crystal materials. It is based on the recently developed Computer Aided Rocking Curve Analyzer and is particularly well suited for analysis of thin film structures common to electronic materials. This technique will be described in detail, and its application in measuring the non-uniform strains in InGaAsP epitaxial film on InP substrate will be presented. Also, possibility of using this method to measure the uniformity of film thickness will be discussed.

X-ray diffraction properties of curved crystal diffractors

1992 ◽  
Vol 50 (2) ◽  
pp. 1734-1735
Author(s):  
W. Z. Chang ◽  
D. B. Wittry
Keyword(s):  
Diffraction Theory ◽  
X Rays ◽  
Diffraction Image ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Bent Crystal ◽  
Diffraction Geometry ◽  
Crystal Parameter ◽  
Quantitative Procedure

Since Du Mond and Kirkpatrick first discussed the principle of a bent crystal spectrograph in 1930, curved single crystals have been widely utilized as spectrometric monochromators as well as diffractors for focusing x rays diverging from a point. Curved crystal diffraction theory predicts that the diffraction parameters - the rocking curve width w, and the peak reflection coefficient r of curved crystals will certainly deviate from those of their flat form. Due to a lack of curved crystal parameter data in current literature and the need for optimizing the choice of diffraction geometry and crystal materials for various applications, we have continued the investigation of our technique presented at the last conference. In the present abstract, we describe a more rigorous and quantitative procedure for measuring the parameters of curved crystals.The diffraction image of a singly bent crystal under study can be obtained by using the Johann geometry with an x-ray point source.

Plastic deformations in kyanites by tectonometamorphic processes: a single-crystal X-ray diffraction study

2009 ◽  
Vol 73 (3) ◽  
pp. 359-371 ◽  
Author(s):  
G. D. Gatta ◽  
N. Rotiroti ◽  
M. Zucali
Keyword(s):  
Single Crystal ◽  
X Ray Diffraction ◽  
Plastic Deformations ◽  
X Ray ◽  
Deformational History ◽  
Significant Difference ◽  
Elliptical Section ◽  
History Of ◽  
Diffraction Patterns ◽  
Two Stages

AbstractThe crystalch emistry and crystal structure of naturalky anite crystals from the Eclogitic Micaschists Complex of the Sesia-Lanzo Zone, Western Italian Alps, have been investigated by means of optical microscopy, wavelength dispersive X-ray microanalysis, and single-crystal X-ray diffraction. The association of kyanite + garnet + phengitic-mica + chloritoid suggests that the eclogite-facies stages occurred at P ≤ 2.1 GPa and T ≤ 650ºC. Kyanite grains are large (cm-sized) porphyroblasts grown dynamically during one of the deformational events related to the subduction of the Austroalpine continentalcr ust. Under the polarizing microscope, kyanite grains show almost homogeneous cores, whereas rims are sometimes symplectitic aggregates of quartz and kyanite, confirming at least two stages of growth most likely related to the multistage deformational history of these rocks. Chemical analysis shows that Fe3+ is the major substituting cation for Al3+, ranging between 0.038 and 0.067 a.p.f.u.The single-crystal X-ray diffraction investigation of the kyanites shows severely textured patterns on the (h0l)*-plane. Such evidence is not observed in the unwarped diffraction patterns on (0kl)* and (hk0)*. The most significant difference between the structuralp arameters refined in this study, with respect to those of previously published unstrained gem-quality crystals, concerns the displacement parameters. The anisotropic displacement ellipsoids of all the atomic sites are significantly larger than those previously described, and systematically oriented with the largest elliptical section almost perpendicular to [010]. The larger ellipsoids in the kyanite crystal investigated here reflect the displacement of the centre of gravity of the electron distribution, rather than an anomalous atomic thermal motion. The magnitude and orientation of the displacement parameters and the textured/strained diffraction pattern may be the result of two combined effects: (1) that the kyanite crystals are actually composed of several blocks; (2) the crystals are affected by a pervasive residual strain, as a result of tectonometamorphic plastic deformations and re-crystallization.

Crystallization of simonkolleite (Zn5Cl2(OH)8 ∙ H2O) in powder samples prepared for mineral composition analysis by quantitative X-ray diffraction (QXRD)

Nafta-Gaz ◽  
2021 ◽  
Vol 77 (5) ◽  
pp. 293-298
Author(s):  
Urszula Zagórska ◽  
◽  
Sylwia Kowalska ◽  
Keyword(s):  
Quantitative Analysis ◽  
Internal Standard ◽  
Mineralogical Composition ◽  
Hydrocarbon Exploration ◽  
Composition Analysis ◽  
Internal Standard Method ◽  
X Ray Diffraction ◽  
Method Error ◽  
X Ray ◽  
Significant Difference

The analysis of mineralogical composition by quantitative X-ray diffraction (QXRD) is one of the standard research methods used in hydrocarbon exploration. In order to improve it and to obtain better results, the methodology of quantitative analysis used at Well Logging Department is being periodically (more or less) modified. After the introduction of the improvements, comparative analyses were performed on archival samples. Reflections from an unidentified phase which did not occur in the tested Rotliegend sandstone samples were noticed on X-ray diffractograms of archival samples. Reflections of a mineral called simonkolleite were identified in the X-ray diffraction database. Chemically it is a hydrated zinc chloride of the formula: Zn5Cl2(OH)8 × H2O. Analysis of the composition of samples in which simonkolleite crystallised, indicated that the mineral is being formed in the result of the slow reaction of zinc oxide with halite (NaCl) and water vapour. An attempt was made to determine the influence of the presence of this mineral on the results of the quantitative analysis of mineralogical composition. The above methodology was applied on a group of ten samples. The results of the quantitative analysis conducted for archival samples stored with added zincite standard containing simonkolleite and for new, freshly grinded (without artifact) samples were compared. The comparison of the obtained results showed a slight influence of this mineral on the quantitative composition of the remaining components. The difference between the results usually did not exceed the method error. At the same time a significant difference in the calculated content of the internal standard was noted – on average 1% less in archival than in new samples. This shows that the reaction occurring in the archival samples will affect the evaluation of the quality of the obtained quantitative analysis, at the same time excluding the possibility of determining the rock’s amorphous substance content with the internal standard method.

Influence of LaNiO3 as an Electrode on the Properties of Ferroelectric Oxides

2000 ◽  
Vol 623 ◽  
Author(s):  
R. Kalare ◽  
M. Vedawyas ◽  
A. Kumar
Keyword(s):  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Memory Device ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
Oxide Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Potential Electrode ◽  
Ferroelectric Oxides

AbstractAn electrode plays an important role in realising a ferroelectric thin film as a potential memory device. We have investigated LaNiO3 (LNO) as a potential electrode material and evaluated the ferroelectric properties of oxide materials like strontium bismuth tantalate (SBT) and barium titanate(BT). We have successfully deposited epitaxial films of LNO on Pt coated Si(100) and LaAlO3 (LAO) substrates using the pulsed excimer laser deposition technique. We are able to grow high quality SBT and BT films on top of this LNO layer. The X-ray diffraction revealed the epitaxy of the LNO, SBT and BT films. The ferroelectric properties of SBTand BT were investigated using the RT66A ferroelectric tester.

The Performance of Channel Cut Collimators for Precision X-Ray Diffraction Studies of Epitaxial Layers

1990 ◽  
Vol 208 ◽  
Author(s):  
Neil Loxley ◽  
D. Keith Bowen ◽  
Brian K. Tanner
Keyword(s):  
Grazing Incidence ◽  
Curve Analysis ◽  
Epitaxial Layers ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Experimental Performance ◽  
Low Background ◽  
X Ray ◽  
Angle Scattering

ABSTRACTReplacement of the pinhole collimator on a double axis X-ray diffractometer with a device incorporating a channel-cut crystal permits the beam to be pre-conditioned in angular divergence. We examine the merits of such devices, known as channel-cut collimators (CCC's), of different materials and reflections. The experimental performance of InP 004 and Si 022 CCC's is presented.With a reference crystal on the first axis, set in the dispersive peometry with respect to the CCC, conditioning in wavelength spread is achieved. Dispersion broadening is effectively eliminated and no resetting of the reference crystal is required when changing specimen materials or reflections. The devices have extremely low background and reduced Bragg tails. Application of the 4-reflection CCC to rocking curve analysis of thin epitaxial layers, ultra-low angle scattering from biological systems, grazing incidence reflectometry and triple axis diffraction of semi-conductors is discussed.

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