Surface Diffusion of Sulfur on Nickel (110) and the Effect of Carbon on the Diffusivity

1992 ◽  
Vol 280 ◽  
Author(s):  
Barbara Ladna ◽  
Howard K. Birnbaum

ABSTRACTThe surface diffusion coefficient of sulfur on the (110) surface of nickel was determined at temperatures of 623, 673 and 723 K by measurement of surface diffusion profiles using an Auger Electron Spectrometer. A half-plane monolayer of segregated sulfur was used as a source and the analysis was done by a Boltzmann-Matano method. The activation energy for surface diffusion of sulfur was determined to be about 106 kJ/mol and pre-exponential Do to be about 6×10-3 m2/s from the Arrhenius plot of D versus 1/T. The presence of carbon on the surface of nickel was shown to decrease the surface diffusion of sulfur. Also, the mechanism of spreading from the half-plane source changed from a classic surface diffusion on clean surfaces to a linear mobility of the sulfur-carbon interface on surfaces covered with carbon.

1969 ◽  
Vol 47 (6) ◽  
pp. 657-663 ◽  
Author(s):  
H. M. Love ◽  
H. D. Wiederick

The diffusion of cesium at the surface of tungsten ribbons has been measured under ultrahigh vacuum conditions. A photoelectric method was used to determine the cesium surface concentrations which were in the range from about 5 × 10−4 to 2 × 10−2 monolayers. The measured changes in concentration with time and temperature were consistent, for a polycrystalline ribbon, with two bulk diffusion processes with activation energies of 1.7 ± 0.3 eV and 0.17 ± 0.03 eV. For a single crystal, it was found that limited bulk diffusion occurred with an activation energy of 0.21 ± 0.02 eV. The mean surface diffusion coefficient for cesium on a (110) tungsten surface over the temperature range from 550 °K to 850 °K was given by D = (0.23 ± 0.10 cm2 s−1) exp [−(0.57 ± 0.02 eV)/kT].


2004 ◽  
Vol 95 (11) ◽  
pp. 6065-6071 ◽  
Author(s):  
H. J. Kim ◽  
Z. M. Zhao ◽  
J. Liu ◽  
V. Ozolins ◽  
J. Y. Chang ◽  
...  

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.


1996 ◽  
Vol 352-354 ◽  
pp. 546-551 ◽  
Author(s):  
M. Šnábl ◽  
M. Ondřejček ◽  
V. Cháb ◽  
W. Stenzel ◽  
H. Conrad ◽  
...  

1977 ◽  
Vol 85 (980) ◽  
pp. 185-189 ◽  
Author(s):  
Wazo KOMATSU ◽  
Yusuke MORIYOSHI ◽  
S. K. MOON ◽  
Hideaki KAMATA ◽  
Shigeyuki KURASHIMA

1987 ◽  
Vol 191 (1-2) ◽  
pp. 108-120 ◽  
Author(s):  
C.H. Mak ◽  
J.L. Brand ◽  
B.G. Koehler ◽  
S.M. George

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