Measurements of Melting Velocities in Gold Films on a Picosecond Time Scale

1992 ◽  
Vol 279 ◽  
Author(s):  
B. E. Homan ◽  
M. T. Connery ◽  
D. E. Harrison ◽  
C. A. Macdonald
Keyword(s):  
Direct Measurement ◽  
Time Scale ◽  
Dye Laser ◽  
Gold Films ◽  
Interfacial Velocity ◽  
Pump Probe ◽  
Laser Probe ◽  
Picosecond Time Scale ◽  
Probe Transmission ◽  
Transmission Measurements

ABSTRACTMelting velocities were measured in thin gold films by performing pump/probe transmission measurements using a unique picosecond excimer pump and dye laser probe. Monitoring the depth of the liquid by changes in the near psuedo-Brewster's angle transmission allowed for direct measurement of crystal/melt interfacial velocity up to 1500 m/s.

Melting Velocity Measurements in Silicon

1990 ◽  
Vol 205 ◽  
Author(s):  
B.E. Homan ◽  
C.A. Macdonald
Keyword(s):  
Time Scale ◽  
Transient State ◽  
Theory Model ◽  
State Theory ◽  
Silicon Wafers ◽  
Velocity Measurements ◽  
Pump Probe ◽  
Doped Silicon ◽  
Picosecond Time Scale ◽  
Best Fit

AbstractMelting velocities in silicon were measured on a picosecond time scale by employing pump-probe and self-reflectivity measurements. The pump laser was a 40 picosecond XeCl excimer (308 am) and the probe a dye laser at 600 am. Samples were phosphorous doped silicon wafers. Average melt-in velocities as high as 800 m/s were observed. Best fit to the data was achieved with an asymmetric transient state theory model.

Correlation of hot-phonon and hot-carrier kinetics in Ge on a picosecond time scale

1991 ◽  
Vol 43 (8) ◽  
pp. 6682-6690 ◽  
Author(s):  
Andreas Othonos ◽  
H. M. van Driel ◽  
Jeff F. Young ◽  
Paul J. Kelly
Keyword(s):  
Time Scale ◽  
Hot Carrier ◽  
Picosecond Time Scale

Interferometric long-term stabilization of a delay line: a tool for pump–probe photoelectron–photoion-coincidence spectroscopy on the attosecond time scale

2008 ◽  
Vol 91 (2) ◽  
pp. 287-293 ◽  
Author(s):  
F.M. Böttcher ◽  
B. Manschwetus ◽  
H. Rottke ◽  
N. Zhavoronkov ◽  
Z. Ansari ◽  
...  
Keyword(s):  
Time Scale ◽  
Delay Line ◽  
Pump Probe ◽  
Coincidence Spectroscopy

scholarly journals A local view of the laser induced magnetic domain dynamics in CoPd stripe domains at the picosecond time scale

2020 ◽  
Vol 32 (46) ◽  
pp. 465801
Author(s):  
V López-Flores ◽  
M-A Mawass ◽  
J Herrero-Albillos ◽  
A A Uenal ◽  
S Valencia ◽  
...  
Keyword(s):  
Time Scale ◽  
Magnetic Domain ◽  
Local View ◽  
Picosecond Time Scale ◽  
Domain Dynamics

Contactless Spatially Resolved Measurement of Bulk Free-Carrier Lifetime in Silicon Ingots

1986 ◽  
Vol 69 ◽  
Author(s):  
S. M. Johnson ◽  
L. G. Johnson ◽  
R. Hemphill
Keyword(s):  
Spatial Dependence ◽  
Polycrystalline Silicon ◽  
Carrier Lifetime ◽  
Transient Absorption ◽  
Free Carrier ◽  
Large Area ◽  
Spatially Resolved ◽  
Probe Transmission ◽  
Transmission Measurements ◽  
Absorption Measurements

AbstractA contactless spatially resolved measurement of bulk free-carrier lifetime in polycrystalline silicon ingots was accomplished using optically modulated free-carrier infrared absorption. Using a CW Nd:YAG laser (λ = 1.319 μm) for a probe and novel pulsed, tunable, infrared dye laser (λ = 1.10 to 1.13 μm) with photon energies near the Si bandgap, for a pump, the free-carrier lifetime was determined from transient absorption measurements to a maximum depth of 3.0 cm from the surface of an ingot. The spatial dependence of the free-carrier lifetime and the distribution of precipitates (determined from infrared probe transmission measurements) measured along the growth axis of an ingot were found to be strongly related to the spatial dependence of the I–V characteristics of large area solar cells fabricated from the subsequently wafered ingot.

Sign in / Sign up

Export Citation Format

Share Document