scholarly journals Excimer Laser Surface Modification: Process and Properties

1992 ◽  
Vol 279 ◽  
Author(s):  
T. R. Jervis ◽  
M. Nastasi ◽  
J.-P. Hirvonen

ABSTRACTSurface modification can improve materials for structural, tribological, and corrosion applications. Excimer laser light has been shown to provide a rapid means of modifying surfaces through heat treating, surface zone refining, and mixing. Laser pulses at modest power levels can easily melt the surfaces of many materials. Mixing within the molten layer or with the gas ambient may occur, if thermodynamically allowed, followed by rapid solidification. The high temperatures allow the system to overcome kinetic barriers found in some ion mixing experiments. Alternatively, surface zone refinement may result from repeated melting-solidification cycles.Ultraviolet laser light couples energy efficiently to the surface of metallic and ceramic materials. The nature of the modification that follows depends on the properties of the surface and substrate materials. Alloying from both gas and pre-deposited layer sources has been observed in metals, semiconductors, and ceramics. Surface enrichment of Cr by zone refinement of stainless steel has also been seen. Rapid solidification after melting often results in the formation of non-equilibrium phases, including amorphous materials. Improved surface properties, including tribology and corrosion resistance, are observed in these materials.

1992 ◽  
Vol 285 ◽  
Author(s):  
A.G. Schrott ◽  
B. Braren ◽  
E.J.M. O'sullivan ◽  
R.F. Saraf

ABSTRACTExcimer laser pulses with wavelengths of 248 and 308 nm were used to selectively seed Pd on SiO2 surfaces, making them suitable for electroless plating. This novel seeding process for insulating materials is accomplished with the sample immersed in the seeding solution, and occurs only on the areas of the substrate that are illuminated (through the liquid) by the laser light. The Pd content of the seeded samples increased with the number of pulses, but was rather independent of repetition rate. The deposition rate showed a dependence with wavelength consistent with a defect driven mechanism for electron excitation through the band gap of SiO2. These electrons then reduce the Pd ions in the solution in contact with the surface.


Author(s):  
Kaoru Igarashi ◽  
Hideaki Saito ◽  
Tomoo Fujioka ◽  
Satoru Fujitsu ◽  
Kunihito Koumoto ◽  
...  

Alloy Digest ◽  
1995 ◽  
Vol 44 (6) ◽  

Abstract THYRAPID PM4 ESH is manufactured by the rapid solidification of powder and augmented by Electro Slag Heating. Good wear resistance and toughness lead to cold work punch and die applications. This datasheet provides information on composition, physical properties, hardness, elasticity, and bend strength. It also includes information on heat treating, machining, and surface treatment. Filing Code: TS-539. Producer or source: Thyssen Specialty Steels Inc.


1984 ◽  
Vol 52 (3) ◽  
pp. 211-214 ◽  
Author(s):  
Ch.G. Christov ◽  
I.V. Tomov ◽  
I.V. Chaltakov ◽  
V.L. Lyutskanov

1992 ◽  
Vol 285 ◽  
Author(s):  
W.W. Duley ◽  
G. Kinsman

ABSTRACTExcimer laser radiation may be used to process metal surfaces in a variety of novel ways. The simplest of these involves the use of UV laser pulses for ablation. Ablation occurs as the result of both vaporization and hydrodynamical effects. Experimental data related to these processes will be discussed. In addition, it will be shown how specific irradiation regimes can yield metal surfaces with unique radiative properties.


1981 ◽  
Vol 4 ◽  
Author(s):  
M. O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
R. B. Hammond ◽  
N. Paulter ◽  
...  

ABSTRACTMeasurements were made of the conductance of single crystal Au-doped Si and silicon-on-sapphire (SOS) during irradiation with 30 nsec ruby laser pulses. After the decay of the photoconductive response, the sample conductance is determined primarily by the thickness and conductivity of the molten layer. For the single crystal Au-doped Si, the solid-liquid interface velocity during recrystallization was determined from the current transient to be 2.5 m/sec for energy densities between 1.9 and 2.6 J/cm2, in close agreement with numerical simulations based on a thermal model of heat flow. SOS samples showed a strongly reduced photoconductive response, allowing the melt front to be observed also. For complete melting of a 0.4 μm Si layer, the regrowth velocity was 2.4 m/sec.


1990 ◽  
Vol 5 (2) ◽  
pp. 265-270 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Eiichi Tamura ◽  
Keigo Nagasaka

Surface hardening of SUS304 resulting from the process of doping and deposition of Si by irradiation of a KrF excimer laser beam in a SiH4 gas ambient is investigated, and variations of the surface hardness are examined for different numbers of laser pulses and the laser fluences. The hardening is due to Si incorporation in high concentration. The continuous distribution of Si atoms across the surface layer suggests that a very high adhesion strength of the deposited Si films can be formed. The specific process for surface modification is referred to as laser implant-deposition (LID).


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