Temperature Dependent C-V Characteristics of YBCO/YSZ/Si MIS Capacitors

1992 ◽  
Vol 275 ◽  
Author(s):  
Jianmin Qiao ◽  
Eric M. Ajimine ◽  
Paresh P. Patel ◽  
Marco A. Segovia ◽  
Cary Y. Yang ◽  
...  
Keyword(s):  
Temperature Cycling ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Thermally Activated ◽  
Threshold Voltages ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mobile Ions ◽  
Mis Capacitors ◽  
Thermally Activated Process

ABSTRACTMetal-insulator-semiconductor capacitors are fabricated from a YBa2Cu3O7-δ (YBCOVYttria-Stabilized Zirconia(YSZ)/Si structure. Current-voltage(I-V) measurements reveal that thicker YBCO films(≤150Å) tend to result in more stable capacitors. Results of capacitance-voltage(C-V) measurements during bias-temperature cycling suggest the presence of a thermally activated process in the YSZ and/or YSZ/Si interface. This process is probably related to trapping/detrapping mechanisms in the SiOx, layer formed between YSZ and Si. It is shown that the distribution of mobile ions in YSZ can be “set” with biases at room temperature and then “frozen” by lowering the temperature, giving rise to adjustable threshold voltages at 80K.

EFFECT OF SURFACE PASSIVATION ON CAPACITANCE–VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS

2011 ◽  
Vol 25 (04) ◽  
pp. 531-542
Author(s):  
CABİR TEMİRCİ ◽  
BAHRI BATI
Keyword(s):  
Chemical Treatment ◽  
Room Temperature ◽  
Surface Passivation ◽  
Anodic Oxide ◽  
Treatment Method ◽  
Schottky Contacts ◽  
Metal Insulator ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Effect Of Surface

We have fabricated the Sn/p-Si Schottky barrier diodes with the interfacial layer metal–insulator–semiconductor (D-MIS) and the surface passivation metal–semiconductor MS (D-MS) by the anodization or chemical treatment method. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the devices were measured at room temperature. We obtained that the excess capacitance (C0) value of the MIS Sn/p-Si diode with the anodic oxide layer of 16.88 pF and 0.12 pF for the MS Sn/p-Si ideal diode with the surface passivation by the anodization or chemical treatment method from reverse bias C–V characteristics. Thus, we have succeeded to diminish the excess capacitance value to the limit of 0.12 pF for the MS Sn/p-Si diode by using the anodization or chemical treatment method.

Electrical and Optical Characterization of InSb Grown on GaAs by MBE

1989 ◽  
Vol 160 ◽  
Author(s):  
Phillip E. Thompson ◽  
James Waterman ◽  
D. Kurtgaskill ◽  
Robert Stahlbush ◽  
Daniel Gammon ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Mismatch ◽  
Optical Characterization ◽  
Layer Growth ◽  
Temperature Dependent ◽  
Carrier Lifetimes ◽  
Capacitance Voltage ◽  
Ir Transmission ◽  
Mis Capacitors

AbstractInSb has been grown on semi-insulating GaAs substrates by molecular beam epitaxy. By growing an InSb buffer layer at 300 C prior to the main InSb layer growth at 420 C, the effect of the 14% lattice mismatch between GaAs and InSb was minimized. A typical 5 µrn InSb film had a room temperature carrier concentration and electron Hall mobility of 2 × 1016/cm3 and 6×104 cm2/Vs, respectively. At 77 K these values became 2 × 1015/cm3 and 1.1 ×105 cm2/Vs. Temperature dependent Hall measurements revealed a peak in the mobility at 85 K and 70 K for the 5 and 10 µm samples. Capacitance-voltage measurements using MIS capacitors produced 77 K carrier concentrations in agreement with the low fieldHall measurements. Carrier lifetimes were determined by photoconductive response measurements. Lifetimes of 20 ns and 50 ns were determined for the 5 and 10 µm films. For comparison, the carrier lifetime in bulk n-type InSb was found to be 200 ns. Optical characterization by room temperature IR transmission spectroscopy showed a broad absorption edge, with an absorption coefficient of 1.4 × 103/cm at a wavelength of 6 µm. Epilayer thickness was determined from observed interference fringes. Raman spectroscopy showed that each epitaxial layer had a spectrum equivalent to that of bulk InSb.

Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes

2005 ◽  
Vol 892 ◽  
Author(s):  
Steven Boeykens ◽  
Maarten Leys ◽  
Marianne Germain ◽  
Jef Poortmans ◽  
Benny Van Daele ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Heteroepitaxial Growth ◽  
Temperature Dependent ◽  
Lattice Matching ◽  
Transmission Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Si Doped ◽  
P Type

AbstractApplication of SiC substrates instead of the most commonly used sapphire for the heteroepitaxial growth of III-Nitrides offers advantages as better lattice matching, higher thermal conductivity, and electrical conductivity. This namely offers interesting perspectives for the development of vertical III-Nitride devices for switching purposes. For example, an AlGaN/SiC heterojunction could improve the performance of SiC bipolar transistors. In this work, n-type GaN layers have been grown by MOVPE on p-type 4H-SiC substrates using Si doped Al0.08Ga0.92N or Al0.3Ga0.7N nucleation layers. They have been characterized with temperature dependent current-voltage (I-V-T), capacitance-voltage (C-V) techniques and transmission electron microscopy (TEM).

Field and temperature dependent current-voltage characteristics of Al-Lu 2 O 3 -Al metal-insulator-metal diodes

2017 ◽  
Vol 520 ◽  
pp. 112-115 ◽  
Author(s):  
Shahnaz Akbar ◽  
Khalid Mahmood ◽  
M.F. Wasiq ◽  
M.Y. Nadeem ◽  
Muhammad Azhar Khan
Keyword(s):  
Temperature Dependent ◽  
Metal Insulator ◽  
Current Voltage ◽  
Metal Insulator Metal ◽  
Current Voltage Characteristics

TUNNELING AND HOPPING BETWEEN DOMAINS IN THE METAL-INSULATOR TRANSITION IN TWO-DIMENSIONS

2008 ◽  
Vol 22 (25n26) ◽  
pp. 4565-4571 ◽  
Author(s):  
DAVID NEILSON ◽  
ALEX HAMILTON
Keyword(s):  
Two Dimensions ◽  
Electron Systems ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Potential Barriers ◽  
Thermally Activated ◽  
Average Variation ◽  
Disorder Potential ◽  
Random Disorder ◽  
Insulating Phase

Motivated by recent surprising experimental results for temperature dependent resistivities in 2D mesoscopic electron systems, we investigate transport in these systems by percolation connected through a network of metallic domains. The size of the domains is determined by the level of disorder in the system and by the strength of the electron correlations. In the insulating phase the metallic domains are connected for transport by two competing mechanisms, thermally activated hopping and quantum tunneling. We calculate the transmission across the potential barriers that separate the metallic domains. Using recent data from transport measurements in mesoscopic 2D systems, we obtain the observed saturation of the temperature dependent resistivity at T ~ 1 K and consistent values for the size of the domains and for magnitude of the average variation in the random disorder potential.

Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

2013 ◽  
Vol 43 (1-2) ◽  
pp. 13-21 ◽  
Author(s):  
Y. Munikrishana Reddy ◽  
M. K. Nagaraj ◽  
M. Siva Pratap Reddy ◽  
Jung-Hee Lee ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage
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