A Comparative Study of Near-Surface Effects Due to Very High Fluence H+ Implantation In Single Crystal FZ, CZ, and Web SI

1983 ◽  
Vol 27 ◽  
Author(s):  
W.J. Choyke ◽  
R.B. Irwin ◽  
J.N. Mcgruer ◽  
J.R. Townsend ◽  
N.J. Doyle ◽  
...  
Keyword(s):  
Comparative Study ◽  
Single Crystal ◽  
Room Temperature ◽  
Surface Effects ◽  
Step Height ◽  
High Fluence ◽  
Near Surface ◽  
Float Zone ◽  
Very High ◽  
Oxygen Concentrations

ABSTRACTCrystals of float-zone, Czochralski, and Web Si having widely differing oxygen concentrations were imrplanted at 300°K with large fluences of hydrogen. Experiments using RBS/channeling, profilometry and microscopy are reported. For room temperature implants the step-height h, the distribution of displaced atoms ND(x) and the total number of displaced atoms/cm2 (aD) are all essentially independent of the oxygen convent of the Si.

Defect induced room temperature ferromagnetism in single crystal, poly-crystal, and nanorod ZnO: A comparative study

2018 ◽  
Vol 123 (16) ◽  
pp. 161507 ◽  
Author(s):  
B. Ghosh ◽  
Sekhar C. Ray ◽  
Mbule Pontsho ◽  
Sweety Sarma ◽  
Dilip K. Mishra ◽  
...  
Keyword(s):  
Comparative Study ◽  
Single Crystal ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism

A homoleptic, all-alkynyl-stabilized highly luminescent Au8Ag8cluster with a single crystal X-ray structure

2016 ◽  
Vol 45 (32) ◽  
pp. 12772-12778 ◽  
Author(s):  
Rui Zhang ◽  
Chongyang Zhao ◽  
Xiumin Li ◽  
Zongyao Zhang ◽  
Xicheng Ai ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Single Crystal ◽  
Room Temperature ◽  
X Ray ◽  
Ag Cluster ◽  
Very High

An all-alkynyl-stabilized, intensely luminescent Au–Ag cluster was synthesized and characterized with a very high solution quantum yield at room temperature.

Mechanical response of single crystal Si to very high fluence H+ implantation

1983 ◽  
Vol 209-210 ◽  
pp. 407-412 ◽  
Author(s):  
W.J. Choyke ◽  
R.B. Irwin ◽  
J.N. McGruer ◽  
J.R. Townsend ◽  
N.J. Doyle ◽  
...  
Keyword(s):  
Single Crystal ◽  
Mechanical Response ◽  
High Fluence ◽  
Very High

Anomalous near-surface effects in room temperature implanted germanium

1983 ◽  
Vol 209-210 ◽  
pp. 303-307 ◽  
Author(s):  
E.M. Lawson ◽  
K.T. Short ◽  
J.S. Williams ◽  
B.R. Appleton ◽  
O.W. Holland ◽  
...  
Keyword(s):  
Room Temperature ◽  
Surface Effects ◽  
Near Surface

Hgl-xCdxTe-Cr Interface Reaction

1984 ◽  
Vol 37 ◽  
Author(s):  
P. Philip ◽  
A. Wall ◽  
A. Franciosi ◽  
D. J. Peterman
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystal ◽  
Exchange Reaction ◽  
Room Temperature ◽  
Interface Reaction ◽  
Surface Layers ◽  
Near Surface ◽  
Subsurface Region

AbstractWe summarize photoemission studies using Synchrotron Radiation of the formation of the HgCdTe-Cr interface at room temperature on in situcleaved single crystal substrates. Evidence is found of a Cr-Hg exchange reaction in the subsurface region. The surface and near surface layers appear completely depleted of mercury.

Reversible Electrical Field-Induced Formation of Ruddlesden-Popper Phases in Strontium Titanate at Room Temperature

2006 ◽  
Vol 928 ◽  
Author(s):  
Dirk Carl Meyer ◽  
Alexandr A. Levin ◽  
Tilmann Leisegang ◽  
Emanuel Gutmann ◽  
Marianne Reibold ◽  
...  
Keyword(s):  
Single Crystal ◽  
Room Temperature ◽  
Structural Changes ◽  
Structural Characteristics ◽  
Crystal Plate ◽  
Near Surface ◽  
X Ray ◽  
Transmission Electron ◽  
Reversible Phase Transition ◽  
Single Crystal Plate

ABSTRACTOn base of the structural characteristics of near-surface regions of a SrTiO3 (001) (STO (001)) single-crystal plate revealed by means of wide-angle X-ray scattering (WAXS), X-ray fluorescence spectroscopy and high-resolution transmission electron microscopy, structural changes in the STO (001) single-crystal plate under the influence of an external electric field at room temperature can be described as the tunable and reversible formation of Ruddlesden-Popper-phases of the quasi-binary system SrO-TiO2. The WAXS behavior implies the use of the reversible phase-transition for adaptive X-ray optics.

Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy

2021 ◽  
Vol 16 (06) ◽  
pp. P06020
Author(s):  
S. Mohapatra ◽  
M. Abhangi ◽  
S. Vala ◽  
P. Kumar Sahu ◽  
S. Rath ◽  
...  
Keyword(s):  
Comparative Study ◽  
Single Crystal ◽  
Room Temperature ◽  
Radiation Detectors ◽  
Alpha Spectroscopy

Atomistic Aspects of Silicide Reactions Studied with STM

1993 ◽  
Vol 320 ◽  
Author(s):  
P. A. Bennett ◽  
S. A. Parikh ◽  
M. Y. Lee ◽  
David G. Cahill ◽  
M. Copel ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Gas ◽  
Bond Breaking ◽  
Prototype System ◽  
Near Surface ◽  
Metal Atoms ◽  
Temperature Deposition ◽  
Low Coverage ◽  
Stm Images ◽  
Very High

ABSTRACTWe discuss atomistic aspects of the silicide contact reaction inferred primarily from STM observations of the prototype system Co/Si(1 11). For room temperature deposition and low coverage (0.01M1) we find that metal atoms exist as near-surface interstitials within the 7×7 reconstruction. Bond breaking associated with silicide formation occurs only at higher coverages. Deposition at 320C results in flat-topped triangular islands of epitaxial CoSi2 with a metastable 7-fold (111) interface, stabilized by the lateral silicon-silicide interface along the island edges. Some islands are covered with a 2×2 array of silicon adatoms. Very high temperature annealing (1200C) results in an “impurity stabilized 1×1” surface which is in fact a lattice gas of ring-clusters that appear like tiny donuts or bagels in empty states STM images. These structures phase-separate from the clean 7×7 structure upon cooling below 850C.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

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