Ion Implantation Damage in CdS Crystals Using RBS/Channeling and Tem

1983 ◽  
Vol 27 ◽  
Author(s):  
N.R. Parikh ◽  
D.A. Thompson ◽  
R. Burkova ◽  
V.S. Raghunathan
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Incident Energy ◽  
Dislocation Loops ◽  
Implantation Damage ◽  
Axial Channeling

ABSTRACTImplantation damage in single crystal of CdS produced by 60 keV Bi+ and 45 keV Ne+ at 50 K and at 300 K has been studied. Measurements of Cd disorder and dechanneling behaviour have been made by means of RBS/channeling for He ions ranging in incident energy from 1.0 to 2.8 MeV either along <0001> or <1120> axial channeling directions. The amount of disorder measured were two orders of magnitude lower than the calculated Cd disorder. Damage when analysed along the <0001> axis is larger than when analysed along the <1120> axis.Xmim values for the implanted crystals decreases as the EO increases, when analysed along <0001> direction. TEM observations of Bi implanted samples show that the dislocation loops of b = 1/3 <1120> are produced. Attempts have been made to correlate the RBS/channeling results with the defect strictures observed in microscopy.

Ellipsometric Study of Ion-Implantation Damage in Single-Crystal Silicon - An Advanced Optical Model

2001 ◽  
Vol 82-84 ◽  
pp. 765-770
Author(s):  
P. Petrik ◽  
O. Polgár ◽  
T. Lohner ◽  
M. Fried ◽  
N.Q. Khánh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Optical Model ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Implantation Damage ◽  
Ellipsometric Study

Flame Annealing of Ion Implanted Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
J. Narayan ◽  
R. T. Young
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Triangular Grid ◽  
Silicon Substrates ◽  
Dislocation Loops ◽  
Implantation Damage ◽  
Hydrogen Flame ◽  
Van Der Pauw ◽  
Flame Annealing

ABSTRACTWe have investigated flame annealing of ion implantation damage (consisting of amorphous layers and dislocation loops) in (100) and (111) silicon substrates. The temperature of a hydrogen flame was varied from 1050 to 1200°C and the interaction time from 5 to 10 seconds. Detailed TEM results showed that a “defect-free” annealing of amorphous layers by solid-phase-epitaxial growth could be achieved up to a certain concentration. However, dislocation loops in the region below the amorphous layer exhibited coarsening,i.e., the average loop size increased while the number density of loops decreased. Above a critical loop density, which was found to be a function of ion implantation variables and substrate temperature, formations of 90° dislocations (a cross-grid of dislocation in (100) and a triangular grid in (111) specimens) were observed. Electrical (Van der Pauw) measurements indicated nearly a complete electrical activation of dopants with mobility comparable to pulsed laser annealed specimens. The characteristics of p-n junction diodes showed a good diode perfection factor of 1.20–1.25 and low reverse bias currents.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

scholarly journals Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon

2020 ◽  
Vol 14 (6) ◽  
pp. 1352-1357
Author(s):  
S. A. Vabishchevich ◽  
S. D. Brinkevich ◽  
V. S. Prosolovich ◽  
N. V. Vabishchevich ◽  
D. I. Brinkevich
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon
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