Characterization of Ion Implanted Silicon by Spectroscopic Ellipsometry and Cross Section Transmission Electron Microscopy

1983 ◽  
Vol 27 ◽  
Author(s):  
P. J. Mcmarr ◽  
K. Vedam ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Cross Sections ◽  
Spectroscopic Ellipsometry ◽  
Dose Range ◽  
Depth Profiles ◽  
Transmission Electron ◽  
Ion Implanted

ABSTRACTThis paper deals with the application of spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (XTEM), to the characterization of damaged surface layers in ion implanted Si single crystal. Si samples of 2–6Ω·cm resistivity and <100> orientation were implanted with 28Si+ ions in the dose range of 1.0 × 1016–1.5 × 1016 ions/cm2 using ion energies of 100 and 200 keV. Ion current densities were varied from 6 to 200 μA/cm2. Depth profiles of the implanted samples were evaluated from the spectroscopic ellipsometry data. These calculated profiles were compared with the TEM micrographs of the cross sections of the samples. Excellent agreement is obtained between the two characterization techniques. The characteristics of the depth profiles of the samples, as established by the two techniques, is shown to be the result of annealing occuring during implantation.

Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry

1992 ◽  
Vol 280 ◽  
Author(s):  
R. Dahmani ◽  
L. Salamanca-Riba ◽  
D. P. Beesabathina ◽  
N. V. Nguyen ◽  
D. Chandler-Horowitz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Spectroscopic Ellipsometry ◽  
Interface Layer ◽  
Transmission Electron ◽  
Three Phase ◽  
Znse Thin Films ◽  
Microscopy Images

ABSTRACTThe interface between ZnSe thin films and GaAs substrates is characterized by High Resolution Transmission Electron Microscopy and room temperature Spectroscopic Ellipsometry. The films were grown on (001) GaAs by Molecular Beam Epitaxy. A three-phase model is used in the reduction of the ellipsometric data, from which the presence of a transition layer of Ga2Se3, with a thickness of less than 1 nm, is confirmed. These results corroborate the high resolution transmission electron microscopy images obtained from the same samples.

Analysis for the Characterization of Oxygen Implanted Silicon (SIMOX) by Spectroscopic Ellipsometry

1990 ◽  
Vol 209 ◽  
Author(s):  
M.G. Doss ◽  
D. Chandler-Horowitz ◽  
J. F. Marchiando ◽  
S. Krause ◽  
S. Seraphin
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Angle Of Incidence ◽  
High Current ◽  
Layer Model ◽  
Unusual Structure ◽  
Transmission Electron ◽  
Best Fit

ABSTRACTSamples of SIMOX have been prepared by implantation in a high-current implanter (density ≍ 1 mA/cm2) and by annealing at 1300°C for 6 hours. Transmission electron microscopy reveals unusual structure in these samples. Spectroscopic ellipsometry has been used to analyze these structures. Ellipsometric measurements were collected at an angle of incidence of 75. deg, with photon energies from 1.5 to 5.0 eV, and using a rotating polarizer configuration. The measurements were analyzed with three models: a three-layer model, a four-layer model, and a five-layer model. The five-layer model provided the best fit of the three. This model identified a layer of crystalline Si inclusions (“islands”) within the SiO2 layer. A method is presented that provides initial estimates for the thicknesses of the top three layers to help start the regression analysis.

scholarly journals Characterization of Polysilicon Films by Raman Spectroscopy and Transmission Electron Microscopy: a Comparative Study

1993 ◽  
Vol 324 ◽  
Author(s):  
David R. Tallant ◽  
Thomas J. Headley ◽  
John W. Medernach ◽  
Franz Geyling
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Cross Section ◽  
Nanometer Scale ◽  
Sampling Depth ◽  
Transmission Electron ◽  
Polysilicon Films

AbstractSamples of chemically-vapor-deposited sub-micrometer-thick films of polysilicon were analyzed by transmission electron microscopy (TEM) in cross-section and by Raman spectroscopy with illumination at their surface. TEM and Raman spectroscopy both find varying amounts of polycrystalline and amorphous silicon in the wafers. Raman spectra obtained using blue, green and red excitation wavelengths to vary the Raman sampling depth are compared with TEM crosssections of these films. Some films have Raman spectra with a band near 497 cm−1, corresponding to numerous nanometer-scale faulted regions in the TEM micrographs.

A Technique to Prepare Cross Sections of Semiconductor Devices in Small Samples for Transmission Electron Microscopy

2000 ◽  
Vol 6 (S2) ◽  
pp. 498-499
Author(s):  
M. V. Hudson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Cross Sections ◽  
Semiconductor Devices ◽  
Small Samples ◽  
Original Sample ◽  
Transmission Electron ◽  
Manual Handling ◽  
Wedge Technique

This technique is used to prepare cross sections of semiconductor devices in small samples for analysis by Transmission Electron Microscopy (TEM). These small samples, measuring 100 X 100 X 50 microns, are too small for the manual handling involved in routine mechanical cross sectioning methods. A larger sample, for easier manual handling, is made by gluing the original small sample between a larger piece of silicon and a larger piece of dimpled quartz. The dimpled depression in the quartz is just large enough to surround the original sample. The sample is then mechanically thinned down using a Tripod polisher and the wedge technique. The quartz piece, glued to the top of the original sample, allows the progress of the polish to be monitored as the first side of the cross section is being mechanically polished. The silicon piece, glued to the bottom of the original sample, is used to gauge the final thickness of the wedge produced when polishing the second side of the cross section using the wedge technique.

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