Characterization of N-Type Layers Formed in Si by Ion Implantation of Hydrogen

1983 ◽  
Vol 27 ◽  
Author(s):  
S. R. Wilson ◽  
W. M. Paulson ◽  
W. F. Krolikowski ◽  
D. Fathy ◽  
J. D. Gressett ◽  
...  
Keyword(s):  
Background Concentration ◽  
Donor Concentration ◽  
Electrical Measurements ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Projected Range ◽  
Residual Damage ◽  
Donor Formation ◽  
C 30

ABSTRACTSilicon wafers have been implanted with H+ (90 keV) to doses of 5.0E15/ cm2 and 2.OE16/cm2. The wafers were annealed in nitrogen at temperatures between 450 and 700°C for times between 10 and 60 min. The electrically active carrier profiles were measured by capacitance voltage and spreading resistance techniques. The residual damage was measured by TEM and RBS. The electrical measurements were essentially the same in both FZ and CZ silicon implying that oxygen is not playing a role in the donor formation which was observed. The donor concentration peaks near the projected range of the hydrogen after annealing at temperatures between 450–500°C. As reported previously 1000 H+ ions generate 1 donor in the implant peak. In addition, the donor concentration between the surface and Rp has increased more than a factor of 10 above the background concentration after a 450°C 10 min anneal. Anneals of 550°C for 30 min or more annihilates essentially all of the donors. The RBS results show small amounts of damage for the 5.0E15/cm2 implant dose but considerable crystal damage with a dose of 2.0E16/cm2, even after a 500°C, 30 min anneal. Cross-sectional TEM analysis of 500°C annealed samples showed a large number of small loops at depths corresonding to the depth of the peak electrical carrier concentration. The donors are directly correlated to the implant damage and resultant defects. SIMS data shows little diffusion for anneals of 500°C or less but after 550°C, 30 min the peak H concentration decreases by approximately a factor of 10.

Al Doped Ta2O5 Thin Films for Microelectronic Applications

2000 ◽  
Vol 654 ◽  
Author(s):  
P. C Joshi ◽  
M. W. Cole ◽  
C. W. Hubbard ◽  
E. Ngo
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Solution Deposition ◽  
Atomic Force ◽  
The Stability ◽  
Insulating Properties ◽  
Post Deposition

AbstractIn this paper, we report on the fabrication and characterization of pure and Al doped Ta2O5 thin films fabricated by metalorganic solution deposition (MOSD) technique. The pure and Aldoped Ta2O5 thin films were fabricated by spin-coating technique using room temperature processed carboxylate-alkoxide precursor solution. The structure of the films was analyzed by xray diffraction (XRD). The surface and cross-sectional morphology of the films were examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on films in MIM configuration using Pt as the top and bottom electrode. The effects of Al concentration and the post-deposition annealing temperature on the structural, dielectric, and insulating properties were analyzed. The effects of the applied bias and the measurement temperature on the dielectric and insulating properties were also analyzed to establish the stability and reliability of Al doped Ta2O5 thin films.

Temperature Dependence of Damage in Boron-Implanted Silicon

1989 ◽  
Vol 147 ◽  
Author(s):  
G. Ottaviani ◽  
F. Nava ◽  
R. Tonini ◽  
S. Frabboni ◽  
G. F. Cerofolini ◽  
...  
Keyword(s):  
Room Temperature ◽  
Amorphous Layer ◽  
Systematic Investigation ◽  
Vacuum Furnace ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Projected Range ◽  
Transmission Electron ◽  
Boron Implantation ◽  
Residual Damage

AbstractWe have performed a systematic investigation of boron implantation at 30 keV into <100> n-type silicon in the 77 –300 K temperature range and mostly at 9×1015 cm−2 fluence. The analyses have been performed with ion channeling and cross sectional transmission electron microscopy both in as-implanted samples and in samples annealed in vacuum furnace at 500 °C and 850 °C for 30 min. We confirm the impossibility of amorphization at room temperature and the presence of residual damage mainly located at the boron projected range. On the contrary, a continuous amorphous layer can be obtained for implants at 77 K and 193 K; the thickness of the implanted layer is increased by lowering the temperature, at the same time the amorphous-crystalline interface becomes sharper. Sheet resistance measurements performed after isochronal annealing shows an apparent reverse annealing of the dopant only in the sample implanted at 273 K. The striking differences between light and heavy ions observed at room temperature implantation disappears at 77 K and full recovery with no residual damage of the amorphous layer is observed.

Preparation and Characterization of Silicon Nanocrystals in a SiO2 Matrix and Study of Suboxide Stability

1996 ◽  
Vol 452 ◽  
Author(s):  
B. J. Hinds ◽  
A. Banerjee ◽  
R. S. Johnson ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor ◽  
Decomposition Reaction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Metastable Form ◽  
C 30 ◽  
Kinetics Of ◽  
Post Deposition

AbstractThe kinetics of the decomposition of silicon suboxides (SiOx, x<2) to Sic + SiO2 was studied as a function of composition and post-deposition annealing. Amorphous hydrogenated SiOx films (0.8<x<1.4) were deposited by remote plasma enhanced chemical vapor deposition (RPECVD) and rapid thermal annealed (RTA) at temperatures of 500–1000°C. By monitoring the Si-O infra-red (IR) bond-stretch mode frequency, it was found that at temperatures below 850°C, or at a oxygen poor composition near SiO0.8, the decomposition reaction only proceeded to a metastable form of SiO1.6 + Si. Characterization by Raman and spectroscopie ellipsometry confirm similar trends. Cross sectional transmission electron microscopy (TEM) confirms that Si nanocrystals (Sine) are formed with anneals at 900°C (30 sec). As deposited suboxides show band edge photoluminescence at 1.6 eV which disappears upon annealing at 900°C, indicating a sharp suboxide free interface between Sinc and SiO2 matrix.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Genomic, Metagenomic and Transcriptomic Characterization of the Clinical Forms of COVID-19: A Comparative Cross-Sectional Study

2020 ◽  
Author(s):  
Christophe Rodriguez ◽  
Nicolas de Prost ◽  
Slim Fourati ◽  
Claudie Lamoureux ◽  
Guillaume Gricourt ◽  
...  
Keyword(s):  
Cross Sectional Study ◽  
Sectional Study ◽  
Cross Sectional ◽  
Clinical Forms
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