Microstructural Developments During Implantation of Metals

1983 ◽  
Vol 27 ◽  
Author(s):  
D. I. Potter ◽  
M. Ahmed ◽  
S. Lamond

ABSTRACTThe chemical and microstructural changes caused by the direct implantation of solutes into metals are examined. The particular case involving Al+-ion implantation into nickel is treated in detail. Chemical composition profiles measured using Auger spectroscopy and Rutherford backscattering, and average near-surface chemical composition measured using an analytical electron microscope, are compared with model calculations. The microstructures that develop during implantation are investigated using transmission electron microscopy. For low fluences implanted near room temperature, these microstructures contain dislocations and dislocation loops. Dislocation loops, dislocations, and voids result from implantations at temperatures near 500°C. Higher fluences at these elevated temperatures produce precipitates when the composition of implanted solute lies in a two-phase region of the phase diagram. Implanted concentrations corresponding to intermetallic compounds produce continuous layers of these compounds. Room temperature, as compared to elevated temperature, implantation may produce the same phases at the appropriate concentrations, e.g. β'-NiAl, or different phases, depending on the relative stability of the phases involved.

1997 ◽  
Vol 481 ◽  
Author(s):  
J.-H. He ◽  
E. Ma

ABSTRACTA model analysis is presented which explains ball-milling induced alloying in positive-heatof- mixing systems in terms of a dynamic balance between externally forced mixing and thermal phase decomposition mediated by deformation-enhanced population of defects. The possibility of eliminating the thermal decomposition to force single phase formation is examined by milling Cu- Fe and Cu-Ta powder mixtures at the liquid nitrogen temperature (LN2T). Over a range of compositions for Cu-Fe and almost the entire composition range for Cu-Ta, the two-phase region observed for room-temperature (RT) milling persisted after cryomilling. The moderate temperature dependence of milling-induced alloying is interpreted by analyzing the dynamics of the generation and annihilation of the nonequilibrium vacancies during deformation and impacts in a SPEX mill.


1996 ◽  
Vol 460 ◽  
Author(s):  
C. T. Liu ◽  
P. J. Maziasz ◽  
J. L. Wright

ABSTRACTThe objective of this study is to identify key microstructural parameters which control the mechanical properties of two-phase γ-TiAl alloys with lamellar structures. TiAl alloys with the base composition of Ti-47Al-2Cr-2Nb (at. %) were prepared by arc melting and drop casting, followed by hot extrusion at temperatures above the oc-transus temperature, Tα. The hot extruded materials were then heat treated at various temperatures above and below Tα in order to control microstructural features in these lamellar structures. The mechanical properties of these alloys were determined by tensile testing at temperatures to 1000° C. The tensile elongation at room temperature is strongly dependent on grain size, showing an increase in ductility with decreasing grain size. The strength at room and elevated temperatures is sensitive to interlamellar spacing, showing an increase in strength with decreasing lamellar spacing. Hall-Petch relationships hold well for the yield strength at room and elevated temperatures and for the tensile elongation at room temperature. Tensile elongations of about 5% and yield strengths around 900 MPa are achieved by controlling both colony size and interlamellar spacing. The mechanical properties of the TiAl alloys with controlled lamellar structures produced directly by hot extrusion are much superior to those produced by conventional thermomechanical treatments.


1988 ◽  
Vol 133 ◽  
Author(s):  
S. A. Court ◽  
J. P. A. Löfvander ◽  
M. A. Stucke ◽  
P. Kurath ◽  
H. L. Fraser

ABSTRACTSamples of polycrystalline Ti3Al-base alloys, and a two phase Ti3Al/TiAl mixture have been deformed at room temperature and at elevated temperatures and examined subsequently by transmission electron microscopy in order to determine the influence of temperature and alloy content on the relative activity of the various slip systems. In particular, the detailed influence of covalent bonding on dislocation mobility in Ti3Al has been identified.


2004 ◽  
Vol 842 ◽  
Author(s):  
Masao Takeyama ◽  
Nobuyuki Gomi ◽  
Sumio Morita ◽  
Takashi Matsuo

ABSTRACTPhase equilibria in Fe-Ni-Nb ternary system at elevated temperatures have been examined, in order to identify the two-phase region of γ-Fe (austenite) and ε-Fe2Nb (C14). The ε single phase region exists in the range of 27.5 to 35.5 at.% Nb in the Fe-Nb binary system, and it extends toward the equi-niobium concentration direction up to 44 at.% Ni in the ternary system at 1473 K, indicating that more than half of the Fe atoms in Fe2Nb can be replaced with Ni. Thus, the γ+ε two-phase region exists extensively, and the solubility of Nb in γ phase increases from 1.5 to 6.0 at.% with increase in Ni content. The lattice parameters of a and c in the C14 Laves phase decrease with increasing Ni content. The change in a axis is in good agreement with calculation based on Vegard's law, whereas that of c axis is much larger than the calculated value. The result suggests that atomic size effect is responsible for a-axis change and the binding energy is dominant factor for the c-axis change. To extend these findings to development of new class of austenitic steels strengthened by Laves phase, an attempt has been made to control the c/a ratio by alloying. The addition of Cr is effective to make the c/a ratio close to the cubic symmetry value (1.633).


1990 ◽  
Vol 194 ◽  
Author(s):  
P. R. Subramanian ◽  
M. G. Mendiratta ◽  
D. B. Miracle ◽  
D. M. Dimiduk

AbstractThe quasibinary NiAI-Mo system exhibits a large two-phase field between NiAl and the terminal (Mo) solid solution, and offers the potential for producing in-situ eutectic composites for high-temperature structural applications. The phase stability of this composite system was experimentally evaluated, following long-term exposures at elevated temperatures. Bend strengths as a function of temperature and room-temperature fracture toughness data are presented for selected NiA1-Mo alloys, together with results from fractography observations.


2006 ◽  
Vol 980 ◽  
Author(s):  
Shigehiro Ishikawa ◽  
Takashi Matsuo ◽  
Masao Takeyama

AbstractPhase equilibria among the bcc Fe(α), fcc Fe(γ) and Fe2Mo(λ)_phases in Fe-Mo-Ni ternary system, particularly paying attention to the existence of the γ+λ two-phase region, have been examined at elevated temperatures below Tc (1200 K), the peritectoid reaction temperature in Fe-Mo binary system: λ?α+Fe7Mo6 (μ). At 1173 K the α+γ+μ three-phase coexisting region exists near the Fe-Mo binary edge and no λ phase region was identified. At 1073 K the λ phase in equilibrium with α and γ phases exists, although the composition homogeneity region of the ternary λ phase was limited to its binary edge toward the equi-nickel concentration direction up to about 3at % Ni. Instead, large two-phase region of γ+μ was extended along the same direction up to 20 at% Ni. The γ+λ two-phase region appears below Tc through a transition peritectoid reaction: α+μ¨γ+λ. The γ phase in equilibrium with λ phase is stable only at elevated temperatures, and it transforms martensitically to α phase during cooling. The addition of Ni stabilizes γ and μ phases against α and λ phases, thereby decreasing the relative stability of the λ phase.


2007 ◽  
Vol 561-565 ◽  
pp. 435-438 ◽  
Author(s):  
Tomoaki Sugiura ◽  
Shigehiro Ishikawa ◽  
Takashi Matsuo ◽  
Masao Takeyama

The phase equilibria among α-Fe, γ-Fe and Fe2Ti phases in Fe-Ti-Ni ternary system at 1473 K and 1373 K with Ni (γ former element) addition were examined, by paying attention to the γ+Fe2Ti two-phase region. The Fe2Ti single-phase region extends toward the equal-titanium concentration direction up to about 30 at% Ni, and the Laves phase becomes in equilibrium with γ-Fe by 12 at% Ni addition, but the γ+Fe2Ti two-phase region is limited because of the formation of liquid phase by further Ni addition at 1473 K. With decreasing temperature, a ternary eutectic reaction (L→γ-Fe+Fe2Ti+Ni3Ti) occurs, making the two-phase region wider just below the invariant reaction at 1373 K, and the region becomes narrower again by the enlargement of the three-phases region toward Fe-rich side.


1989 ◽  
Vol 147 ◽  
Author(s):  
G. Braunstein ◽  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Rajeswaran.

AbstractWe have studied the influence of the temperature of implantation on the morphology of the defects created during 1-MeV implantation of Si into GaAs, using RBS-channeling and TEM. The annealing behavior of the disorder has also been investigated.Implantation at liquid-nitrogen temperature results in the amorphization of the implanted sample for doses of 2×1014 cm−2 and larger. Subsequent rapid thermal annealing at 900°C for 10 seconds leads to partial epitaxial regrowth of the amorphous layer. Depending on the implantation dose, the regrowth can proceed from both the front and back ends of the amorphous region or only from the deep end of the implanted zone. Nucleation and growth of a polycrystalline phase occurs concurrently, limiting the extent of the epitaxial regrowth. After implantation at room temperature and above, two distinct types of residual defects are observed or inferred: point defect complexes and dislocation loops. Most of the point defects disappear after rapid thermal annealing at temperatures ≥ 700°C. The effect of annealing on the dislocation loops depends on the distance from the surface of the sample. Those in the near surface region disappear upon rapid thermal annealing at 700°C, whereas the loops located deeper in the sample grow in size and begin to anneal out only at temperatures in excess of 900°C. Implantation at temperatures of 200 - 300°C results in a large reduction in the number of residual point defects. Subsequent annealing at 900°C leads to a nearly defect-free surface region and, underneath that, a buried band of partial dislocation loops similar to those observed in the samples implanted at room temperature and subsequently annealed.


1990 ◽  
Vol 202 ◽  
Author(s):  
Huade Yao ◽  
Paul G Snyder ◽  
John A Woollam

ABSTRACTSpectroscopic ellipsometric (SE) measurements of GaAs (100) were carried out in an ultrahigh vacuum (UHV) chamber, without arsenic overpressure, at temperatures ranging from room temperature (RT) to ∼610°C. Surface changes induced at elevated temperatures were monitored by in-situ spectroscopic ellipsometry. The SE data clearly displayed in real time the process of desorption of the GaAs-surface-oxide overlayer at ∼580°C. In addition, changes in the near-surface region were observed before and after the oxide desorption. The near-subsurface region (top 50–100 Å) became less optically dense after being heated to 540°C or higher. For comparison, a pre-arsenic-capped molecular-beam-epitaxy (MBE)-grown GaAs surface was also studied. After the arsenic cap was evaporated off at ∼350°C, this surface remained smooth and clean as it was heated to higher temperatures.


1998 ◽  
Vol 527 ◽  
Author(s):  
B. Aufray ◽  
H. Giordano ◽  
V. Petrova ◽  
D. N. Seidman

ABSTRACTWe present a scanning tunneling microscopy (STM) study, performed at different elevated temperatures, on the influence of Sb surface segregation on the morphology of the (111) surface of a Cu-0.45 at.% Sb solid-solution single-crystal; the surface was initially cleaned at room temperature by Ar+ ion sputtering. Unexpectedly, when the temperature is increased from room temperature to 380°C, the typical (111) surface morphology, obtained after sputtering, evolves in two very different manners that depend on the heating rate. If the heating rate is rapid (approximately a few minutes), it evolves to a structure with large terraces, whereas if it is slow (about 10 hours) the morphology does not evolve -- i.e., it is frozen. These unexpected results are interpreted in terms of excess subsurface point defects (vacancies and self-interstitials) created during ion bombardment, which are mobile and can mediate Sb diffusion at low temperatures. This is mainly on step edges, but the point defects can precipitate out of solution, for a rapid heating rate, thereby forming small secondary clusters in the near-surface region, in which Sb atoms are trapped.


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