A New Gold-Indium Eutectic Bonding Method

1992 ◽  
Vol 264 ◽  
Author(s):  
Chin C. Lee ◽  
Chen Y. Wang ◽  
Goran Matijasevic ◽  
Steve S. Chan

AbstractAu-In eutectic bonding method which needs only a low process temperature (˜200°C) but produces high temperature (450°C) bonds is reported. In this study, multiple layers of Au and In are deposited directly on semiconductor wafers in one vacuum cycle to prevent indium oxidation and then bonded to substrates coated with Au. At 200°C the indium layer melts and dissolves the gold layers to form a mixture of liquid and solid. The diffusion process continues until the bond solidifies. Upon solidification, the bond has a melting temperature of 456.5°C. Scanning Acoustic Microscope was used to determine the excellent bonding quality before and after thermal shock tests and SEM with EDX capability is employed to determine the composition of the resulting bonds.

Metals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 766 ◽  
Author(s):  
Chunlong Cheng ◽  
Qing Lan ◽  
An Wang ◽  
Qichi Le ◽  
Fan Yang ◽  
...  

AZ80, AZX801, and AZX802 alloys were prepared to investigate the ignition temperature and multi-stage oxidation behavior in air. Besides, the microstructures of alloys before and after oxidation were compared. The results reveal that AZX802 exhibits the characteristics of higher ignition temperature and best oxidation resistance compared to AZX801 and AZ80, which contributes to the increase of melting temperature of secondary phase in matrix due to the formation and increase of Al2Ca, with the addition of Ca in AZ80. In addition, the incubation periods before accelerated oxidation and the beginning of the accelerated oxidation temperatures of AZ80, AZX801, and AZX802 are different during multi-stage oxidation, which also contributes to the different onset melting temperature of the secondary phase. And the beginning of the accelerated oxidation of Mg alloys at high temperature is always accompanied by the onset melting of the low melting temperature of the secondary phase and the growth of oxide nodule on the surface.


1998 ◽  
Vol 515 ◽  
Author(s):  
William W. So ◽  
Chin C. Lee

ABSTRACTHigh temperature joints are required for packaging and assembling the emerging high temperature semiconductor devices. A technique of producing high temperature joints at relatively low process temperature is presented. The technique uses liquid-solid interdiffusion to formulate the joint and subsequent solid-state diffusion and interaction to convert the joint material into high temperature alloy. Processes have been developed using the indium-silver binary material system. Joint melting temperature higher than 700°C has been achieved while the process temperature stays below 210°C. In this development effort, the constituent element materials are deposited in multilayer structure in high vacuum to prevent oxidation. As a result, no flux is used and no scrubbing action is applied. The joints produced are examined with a scanning acoustic microscope (SAM) to evaluate the bonding quality. The joint cross-sections are studied using SEM and EDX to find the microstructure and composition. In conventional processes, the process temperature needs to exceed the alloy melting temperature in order to produce a joint. High stresses can develop due to thermal expansion mismatch among materials involved. In the present technique, the relatively low process temperature can significantly reduce the stresses. The multilayer bonding method also facilitates control of the alloy composition and the joint thickness.


2014 ◽  
Vol 59 (1) ◽  
pp. 355-358
Author(s):  
M. Karaś ◽  
M. Nowak ◽  
M. Opyrchał ◽  
M. Bigaj ◽  
A. Najder

Abstract In this study, the effect of zinc interlayer on the adhesion of nickel coatings reinforced with micrometric Al2O3 particles was examined. Nickel coating was applied by electroplating on EN AW - 5754 aluminium alloy using Watts bath at a concentration of 150 g/l of nickel sulphate with the addition of 50 g/l of Al2O3. The influence of zinc intermediate coating deposited in single, double and triple layers on the adhesion of nickel coating to aluminium substrate was also studied. The adhesion was measured by the thermal shock technique in accordance with PN-EN ISO 2819. The microhardness of nickel coating before and after heat treatment was additionally tested. It was observed that the number of zinc interlayers applied does not significantly affect the adhesion of nickel which is determined by thermal shock. No defect that occurs after the test, such as delamination, blistering or peeling of the coating was registered. Microhardness of the nickel coatings depends on the heat treatment and the amount of zinc in the interlayer. For both single and double zinc interlayer, the microhardness of the nickel coating containing Al2O3 particles increased after heat treatment, but decreased when a triple zinc interlayer was applied.


Author(s):  
S.X. Li ◽  
K. Lee ◽  
J. Hulog ◽  
R. Gannamani ◽  
S. Yin

Abstract Package delaminations are often associated with electrical and package reliability problems in IC devices. Delaminations caused by electrical-over-stress (EOS) and moisture expansion during reflow soldering have shown different delamination patterns. A Scanning Acoustic Microscope (SAM) can be used to detect package delaminations. Understanding these delamination signatures can help us quickly identify the failure cause at an early stage of the failure analysis.


Author(s):  
O. Diaz de Leon ◽  
M. Nassirian ◽  
C. Todd ◽  
R. Chowdhury

Abstract Integration of circuits on semiconductor devices with resulting increase in pin counts is driving the need for improvements in packaging for functionality and reliability. One solution to this demand is the Flip- Chip concept in Ultra Large Scale Integration (ULSI) applications [1]. The flip-chip technology is based on the direct attach principle of die to substrate interconnection.. The absence of bondwires clearly enables packages to become more slim and compact, and also provides higher pin counts and higher-speeds [2]. However, due to its construction, with inherent hidden structures the Flip-Chip technology presents a challenge for non-destructive Failure Analysis (F/A). The scanning acoustic microscope (SAM) has recently emerged as a valuable evaluation tool for this purpose [3]. C-mode scanning acoustic microscope (C-SAM), has the ability to demonstrate non-destructive package analysis while imaging the internal features of this package. Ultrasonic waves are very sensitive, particularly when they encounter density variations at surfaces, e.g. variations such as voids or delaminations similar to air gaps. These two anomalies are common to flip-chips. The primary issue with this package technology is the non-uniformity of the die attach through solder ball joints and epoxy underfill. The ball joints also present defects as open contacts, voids or cracks. In our acoustic microscopy study packages with known defects are considered. It includes C-SCAN analysis giving top views at a particular package interface and a B-SCAN analysis that provides cross-sectional views at a desired point of interest. The cross-section analysis capability gives confidence to the failure analyst in obtaining information from a failing area without physically sectioning the sample and destroying its electrical integrity. Our results presented here prove that appropriate selection of acoustic scanning modes and frequency parameters leads to good reliable correlation between the physical defects in the devices and the information given by the acoustic microscope.


Author(s):  
Li Na ◽  
Jawed Khan ◽  
Lonnie Adams

Abstract For stacked die package delamination inspection using C-mode acoustic microscope, traditional interface and thorough scan techniques cannot give enough of information when the delamination occurs in multi-interfaces, and echoes from adjacent interfaces are not sufficiently separated from each other. A thinner thickness in the stacked-die package could complicate C-mode scanning acoustic microscopy (CSAM) analysis and sometimes may lead to false interpretations. The first objective of this paper is to briefly explain the CSAM mechanism. Based on that, some of the drawbacks of current settings in detecting the delamination for stacked-die packages are presented. The last objective is to introduce quantitative B-scan analysis mode (Q-BAM) and Zip-Slice technologies in order to better understand and improve the reliability of detecting the delamination in stacked-die packages. Therefore, a large portion of this paper focuses on the Q-BAM and Zip-Slice data acquisition and image interpretation.


2021 ◽  
pp. 002199832110046
Author(s):  
Wei Feng ◽  
Chengwei Tang ◽  
Lei Liu ◽  
Jian Chen ◽  
Yang Zhang ◽  
...  

ZrB2 particles were preset to the C-AlSi interface to improve oxidation resistance of C/C preform and adjust the microstructure of the interpenetrated C/C-AlSi composite prepared through pressure infiltration of eutectic AlSi into a fiber fabric based porous C/C skeleton. Micro-morphology investigations suggested that the AlSi textures were changed from dendritic to petals-like state, and the nano to micro-scale ZrB2 particles were dispersed into AlSi and affected the distribution of Al and Si nearby carbon. Tests demonstrated that C/C-AlSi have slight lower density and thermal expansion coefficient, and higher original compressive strength, while C/C-ZrB2-AlSi composites presented an outstanding strength retention rate after thermal shock. Fracture and micro-morphology indicated that the influence of the preset ZrB2 to the interface of carbon and alloy greatly affected the generation and propagation of cracks, which determined the diverse compression behaviors of the composites before and after thermal shock.


Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 643
Author(s):  
Xuhang Zhou ◽  
Qiulin Tan ◽  
Xiaorui Liang ◽  
Baimao Lin ◽  
Tao Guo ◽  
...  

Performing high-temperature measurements on the rotating parts of aero-engine systems requires wireless passive sensors. Surface acoustic wave (SAW) sensors can measure high temperatures wirelessly, making them ideal for extreme situations where wired sensors are not applicable. This study reports a new SAW temperature sensor based on a langasite (LGS) substrate that can perform measurements in environments with temperatures as high as 1300 °C. The Pt electrode and LGS substrate were protected by an AlN passivation layer deposited via a pulsed laser, thereby improving the crystallization quality of the Pt film, with the function and stability of the SAW device guaranteed at 1100 °C. The linear relationship between the resonant frequency and temperature is verified by various high-temperature radio-frequency (RF) tests. Changes in sample microstructure before and after high-temperature exposure are analyzed using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The analysis confirms that the proposed AlN/Pt/Cr thin-film electrode has great application potential in high-temperature SAW sensors.


2011 ◽  
Vol 312-315 ◽  
pp. 583-588 ◽  
Author(s):  
Grzegorz Moskal ◽  
Lucjan Swadźba ◽  
Marek Hetmańczyk ◽  
Bartosz Witala

The paper presents test results and characterizes the structural stability of powders, which form a mixture of aluminium oxide (Al2O3) and gadolinium, based on rare earth zirconates. This mixture is provided to create thermal barrier coatings (TBCs) by spraying. The purpose of the tests was to determine the influence of temperature on reactions, occurring between those powders within a temperature range from 25°C to 1500°C, while such conditions were to simulate the conditions, which occur during creation of TBCs and they give an answer to the question concerning mutual reactivity of the powders. The requirements for new materials, provided to spray the TBCs, indicate the necessity to prepare the materials, which do not show tendency towards reactions with the Al2O3, formed during oxidation of Ni (Co) CrAlY, while this reaction is of type bond coat. The tests included differential scanning calorimetric (DSC) analysis and differential thermal analysis (DTA) of powder mixtures. Diffraction analysis was also performed before and after the tests have been finished. The DSC analysis results, obtained at a range of high temperature, did not show any thermal effects, which indicate a low level of mutual reactivity of the powders. However, the DTA analysis suggests presence of such effects at temperature close to 1300°C, and it indicates the necessity to verify exactly the obtained results. Results of the XRD measurement showed that after annealing process already at 1100°C the perovskite oxide of GdAlO3 was present.


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