Tem Assessment of Different Mechanisms Contributing to Stress Relaxation in Strained InGaAs/InAlAs Systems

1992 ◽  
Vol 263 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
J.R. Morante ◽  
S. A. Clark ◽  
R.H. Williams
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stress Relaxation ◽  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Lattice Parameter ◽  
Growth Morphology ◽  
Transmission Electron ◽  
Inp Substrates

ABSTRACTA study by Transmission Electron microscopy (TEM) of strained InGaAs/InAlAs systems on InP substrates is presented. The influence of the lattice mismatch, epilayer thickness and modulation of the lattice parameter on the morphology of the system is analyzed. A discussion of the strain relaxation mechanisms occurring for each growth morphology is also presented.

scholarly journals The Examination of Calcium ion Implanted Alumina with Energy Filtered Transmission Electron Microscopy

1997 ◽  
Vol 3 (S2) ◽  
pp. 413-414
Author(s):  
E.M. Hunt ◽  
J.M. Hampikian ◽  
N.D. Evans
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pure Aluminum ◽  
Lattice Parameter ◽  
Face Centered Cubic ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Knoop Microhardness ◽  
Aluminum Nanocrystals ◽  
Face Centered

Ion implantation can be used to alter the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca+ to a fluence of 5 x 1016 ions/cm2. Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ≈7 - 8 nm in diameter as seen in Figure 1. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum (which is FCC with a lattice parameter of 0.404 nm) suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium.Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals.

Microstructure of SrTiO3 Thin Films as Single Layer and Incorporated in Yba2Cu3O7-x/SrTiO3 Multilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Single Layer ◽  
Transmission Electron ◽  
Tilt Boundaries ◽  
Interfacial Dislocations ◽  
The Individual ◽  
Film Substrate

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.

Asymmetric Cracking in Znse/ZnSxSel−x Superlattices Grown by Molecular Bean Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
Richard J. Dalby ◽  
John Petruzzello
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Expansion ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Sulfur Concentration ◽  
Transmission Electron ◽  
Theoretical Predictions ◽  
Superlattice Layer

ABSTRACTOptical and transmission electron microscopy have been used to study cracks appearing in ZnSe/ZnSxSe1−x (x ∼ 0.38) superlattices grown by Molecular Beam Epitaxy. It Is shown that when a fracture occurs it is confined, in most cases, to the superlattice and propagates along <011> cleavage directions in these <001> oriented epilayers. Cracks were not observed in all superlattices and their onset is discussed in relation to sulfur concentration, overall superlattice height, individual superlattice layer thicknesses, and stress, tensile or compressive, due to lattice mismatch and thermal expansion differences between buffer layer and superlattice. It was found that by adjusting the controllable parameters, cracks in the superlattices could be eliminated. Orientation and density of these features have been related to asynnmetric cracking associated with the zincblende structure of these II-VI materials. Experimental results are shown to be in agreement with theoretical predictions of critical heights for the onset of cracking.

TEM Study of strain states in III-V semiconductor epitaxial layers.

2001 ◽  
Vol 673 ◽  
Author(s):  
André ROCHER ◽  
Anne PONCHET ◽  
Stéphanie BLANC ◽  
Chantal FONTAINE
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lattice Mismatch ◽  
Thick Layer ◽  
Misfit Strain ◽  
Gasb Layer ◽  
Transmission Electron ◽  
Moiré Fringes ◽  
Square Array ◽  
Plane View

ABSTRACTThe strain states induced by a lattice mismatch in epitaxial systems have been studied by Transmission Electron Microscopy (TEM) using the moiré fringe technique on plane view samples. For the GaSb/(001)GaAs system, moiré patterns suggest that the GaSb layer is free of stress and homogeneously relaxed by a perfect square array of Lomer dislocations. A 10 nm thick layer of GaInAs (20% In concentration) grown on (001)GaAs does not give any moiré fringes for all low-index Bragg reflections: this result indicates that the effective misfit strain does not correspond to the theoretical one described by the elastic theory. Segregation effects are expected to play an important role in the relaxation of the misfit strain.

Stress Relaxation Behavior of GH4169 Alloy

2020 ◽  
Vol 1013 ◽  
pp. 52-58
Author(s):  
Xu Dong Lu ◽  
Song Yi Shi ◽  
Bo Wen ◽  
Ya Wei Zhang ◽  
Jin Hui Du
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stress Relaxation ◽  
Initial Stress ◽  
Relaxation Behavior ◽  
Stress Relaxation Behavior ◽  
Transmission Electron ◽  
Microscopy Techniques ◽  
The Relationship ◽  
Gh4169 Alloy

The relaxation properties of GH4169 alloy were studied contrastively at temperatures ranging from 600 oC to 700 °C and initial stress ranging from 550 MPa to 850 MPa. The relationship between the microstructure and relaxation behavior was evaluated using transmission electron microscopy techniques. It was found that the relaxation limit and relaxation stability of the alloy decreased obviously with the increase of temperature. Further investigations show that the relaxation behavior is mainly depend on both precipitate characteristics and its interaction with dislocations. The alloy with higher strength lever has more excellent stress relaxation stability, because of the inhibition of a large number subgrains on dislocations motion.

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

2011 ◽  
Vol 1324 ◽  
Author(s):  
Y. Wang ◽  
P. Ruterana ◽  
L. Desplanque ◽  
S. El Kazzi ◽  
X. Wallart
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Treatment ◽  
Substrate Surface ◽  
Strain Relaxation ◽  
Dislocation Core ◽  
Misfit Dislocations ◽  
Heteroepitaxial Growth ◽  
Transmission Electron ◽  
Growth Initiation

ABSTRACTHigh resolution transmission electron microscopy in combination with geometric phase analysis is used to investigate the interface misfit dislocations, strain relaxation, and dislocation core behavior versus the surface treatment of the GaAs for the heteroepitaxial growth of GaSb. It is pointed out that Sb-rich growth initiation promotes the formation of a high quality network of Lomer misfit dislocations that are more efficient for strain relaxation.

The effect of grain size on microstructure and stress relaxation in polycrystalline Y1Ba2Cu3O7−δ

1989 ◽  
Vol 4 (2) ◽  
pp. 248-256 ◽  
Author(s):  
T. M. Shaw ◽  
S. L. Shinde ◽  
D. Dimos ◽  
R. F. Cook ◽  
P. R. Duncombe ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Grain Size ◽  
Stress Relaxation ◽  
Optical Microscopy ◽  
Slow Cooling ◽  
Hierarchical Arrangement ◽  
Transmission Electron ◽  
Processing Variables

We have used transmission electron microscopy and optical microscopy to examine the effect that grain size and heat treatment have on twinning and microcracking in polycrystalline Y1Ba2Cu3O7−δ. It is shown that isothermal oxygenation heat treatments produce twin structures consisting of parallel twins, with a characteristic spacing that increases with increasing grain size. Slow cooling through the temperature range where the orthorhombic-to-tetragonal transformation induces twinning, however, produces a structure consisting of a hierarchical arrangement of intersecting twins, the scale of which appears to be independent of grain size. It is also shown that the microcracking induced by anisotropic changes in grain dimensions on cooling or during oxygenation can be suppressed if the grain size of the material is kept below about 1 μm. The results are examined in the light of current models for transformation twinning and microcracking and the models used to access the effect other processing variables such as oxygen content, doping or heat treatment may have on the microstructure of Y1Ba2Cu3O7−δ.

The microstructure and stoichiometry of pyrite FeS2−x

1992 ◽  
Vol 7 (7) ◽  
pp. 1829-1838 ◽  
Author(s):  
S. Fiechter ◽  
M. Birkholz ◽  
A. Hartmann ◽  
P. Dulski ◽  
M. Giersig ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lattice Parameter ◽  
Population Parameter ◽  
Microscope Examination ◽  
Density Measurements ◽  
X Ray ◽  
Transmission Electron ◽  
Structural Nature ◽  
Synthetic Crystals

Both natural and synthetic crystals of pyrite, FeS2−x, have been analyzed chemically and examined structurally by transmission electron microscopy and x-ray powder diffraction. Chemical analysis and density measurements have shown the synthetic crystals, grown at 850 K, are frequently deficient in sulfur, with a composition of FeS2−x with x ⋚ 0.15. From a refinement of the pyrite structure using the integral intensities of the x-ray powder pattern, a variation in the sulfur population parameter was obtained ranging from 0.87(2) to 1.03(3). A correlation according to Vegard's rule between the population factor and the lattice parameter a0 has been proven. Transmission electron microscope examination revealed that the crystals did not contain a significant population of disorder defects which may account for this apparent sulfur deficit. Therefore the nonstoichiometry in pyrite has to be interpreted in terms of S vacancies which can be understood as the tendency of the material to reduce the high anion content in the unit cell. The structural nature of nonstoichiometric pyrite is discussed in relationship to other related disulfides.

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

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