Strain Relief Mechanisms in The Growth of GexSi1−x/Si(110) Heterostructures
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ABSTRACTWe describe a detailed quantitative theoretical and experimental analysis of strain relief mechanisms in GexSi1−x/Si(110). For this interface, both partial and total glide dislocations may effect strain relief. Detailed comparison between experimental measurement and theoretical prediction of the regimes in which the two types of dislocations are observed allows a very accurate determination of the stacking fault energy in GexSi1−x alloys.
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1991 ◽
Vol 49
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pp. 688-689
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1990 ◽
Vol 193
(1-4)
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1971 ◽
Vol 24
(192)
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pp. 1365-1381
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1990 ◽
Vol 2
(50)
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pp. 10223-10225
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1974 ◽
Vol 65
(2)
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pp. 751-764
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1980 ◽
Vol 11
(7)
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pp. 1125-1130
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