Photoinduced Electron Transfer Counter to the Bias Field in Coupled Quantum Wells

1992 ◽  
Vol 261 ◽  
Author(s):  
Mark I. Stockman ◽  
Leonid S. Muratov ◽  
Lakshmi N. Pandey ◽  
Thomas F. George

ABSTRACTOptical excitation of electrons in an asymmetric double quantum well is theoretically examined. The well is biased to align the excited levels and permit resonant electron tunneling. Emphasis is made on the photoinduced transfer of electrons counter to the bias electric field force. A density-matrix approach is developed to describe optical excitations in the presence of an arbitrary dephasing. The excitation profiles obtained for cases of different dephasing reveal the full range of tunneling coupling between the wells from completely coherent to incoherent (stepwise).

2016 ◽  
Vol 30 (13) ◽  
pp. 1642011 ◽  
Author(s):  
I. Filikhin ◽  
A. Karoui ◽  
B. Vlahovic

Electron localization and tunneling in laterally distributed double quantum well (DQW) and triple quantum well (TQW) are studied. Triangular configuration for the TQWs as well as various quantum well (QW) shapes and asymmetry are considered. The effect of adding a third well to a DQW is investigated as a weakly coupled system. InAs/GaAs DQWs and TQWs were modeled using single subband effective mass approach with effective potential simulating the strain effect. Electron localization dynamics in DQW and TQW over the whole spectrum is studied by varying the inter-dot distances. The electron tunneling appeared highly sensitive to small violations of the DQW mirror symmetry. We show that the presence of a third dot increases the tunneling in the DQW. The dependence of the tunneling in quantum dot (QD) arrays on inter-dot distances is also discussed.


2008 ◽  
Vol 07 (04n05) ◽  
pp. 215-221 ◽  
Author(s):  
MONICA GUDWANI ◽  
VINOD PRASAD ◽  
PRADEEP KUMAR JHA ◽  
MAN MOHAN

We consider the electrons bound in the conduction band of a double quantum well interacting with a strong monochromatic electromagnetic field in the terahertz (THz) region. Using a variant of the stationary perturbation theory, we have obtained the quasienergies and Floquet eigenvectors. The main features of power broadening and the dynamic Stark shift are retained. The sensitivity to the field parameters, such as intensity and frequency of the electric field on the state populations, can be used in various optical semiconductor device applications.


1994 ◽  
Vol 358 ◽  
Author(s):  
Tiesheng Li ◽  
H. J. Lozykowski

ABSTRACTExperimental and theoretical investigations of electronic states in a strained-layer CdTe/CdZnTe coupled double quantum well structure are presented. The optical properties of this lattice mismatched heterostructure were characterized by photoluminescence (PL), PL excitation and polarization spectroscopies. The influence of electrical field on exciton states in the strained layer CdTe/CdZnTe coupled double quantum well structure is experimentally studied. The confined electronic states were calculated in the framework of the envelope function approach, taking into account the strain effect induced by the lattice-mismatch. Experimental results are compared with the calculated transition energies.


2010 ◽  
Vol 24 (17) ◽  
pp. 1899-1905
Author(s):  
XUN XIAO

We show the formation of slow optical solitons in the asymmetric coupled double quantum wells (CQW) via a two-photon Raman resonance. With the consideration of real parameters in AlGaAs -based CQW, we indicate the possibility to have cancelation of the linear absorption, giant Kerr nonlinearities, and slow group velocity propagation of the weak probe pulse at the same one-photon detuning frequency around several THz .


1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.


1992 ◽  
Vol 45 (15) ◽  
pp. 8550-8561 ◽  
Author(s):  
Mark I. Stockman ◽  
Leonid S. Muratov ◽  
Lakshmi N. Pandey ◽  
Thomas F. George

NANO ◽  
2009 ◽  
Vol 04 (05) ◽  
pp. 289-297
Author(s):  
MONICA GAMBHIR ◽  
SIDDHARTHA LAHON ◽  
PRADEEP KUMAR JHA ◽  
MAN MOHAN

The basic technique of stimulated Raman adiabatic passage for laser-induced adiabatic population transfer between discrete quantum states of an asymmetric double quantum well has been used in our study. The results show that the proper time-delay, overlap, and detuning of two pulses allows the coherent transfer between the states of a double quantum well system, leading to the possibility of implementation of semiconductor–based quantum logic gates and high efficiency optical switches. The impact of phase relaxation on the population transfer efficiency is also studied.


Open Physics ◽  
2012 ◽  
Vol 10 (2) ◽  
Author(s):  
Vladimir Gavryushin

AbstractWe have derived and analyzed the wavefunctions and energy states for an asymmetric double quantum well (ADQW), broadened due to interdiffusion or other static interface disorder effects, within a known discreet variable representative approach for solving the one-dimensional Schrodinger equation. The main advantage of this approach is that it yields the energy eigenvalues, and the eigenvectors, in semiconductor nanostructures of different shapes as well as the strengths of the optical transitions between them. The behaviour of ADQW states for the different mutual widths of coupled wells, for the different degree of broadening, and under increasing external electric field is investigated. We have found that interface broadening effects change and shift energy levels, not monotonously, but the resonant conditions near an energy of sub-band coupling regions do not strongly distort. Also, it is shown that an external electric field may help to achieve resonant conditions for inter-sub-band inverse population by intrawell emission of LO-phonons in diffuse ADQW.


1987 ◽  
Vol 102 ◽  
Author(s):  
Y. J. Chen ◽  
Emil S. Koteles ◽  
B. Elman ◽  
C. A. Armiento

ABSTRACTWe present a detailed experimental study of the influence of electric fields on exciton states in a GaAs/AlGaAs coupled double quantum well structure and discuss the advantages of using this novel structure. The coupling of electronic states in the two quantum wells, due to the narrowness of the barrier between them, leads to an enhancement of the quantum-confined Stark effect (by as much as five times that of the single quantum well case). From the measured energies of the exciton transitions, splittings of the levels in a coupled double quantum well structure were derived without recourse to a theoretical model.


1994 ◽  
Vol 50 (16) ◽  
pp. 12195-12198 ◽  
Author(s):  
F. T. Vasko ◽  
O. E. Raichev

Sign in / Sign up

Export Citation Format

Share Document